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  2.0v-100v Datasheet PDF File

For 2.0v-100v Found Datasheets File :: 8687    Search Time::2.5ms    
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    Infineon Technologies A...
Part No. SGD02N120 SGB02N120 SGI02N120
OCR Text ... na transconductance g fs v ce =20v, i c =2a 1.5 - s dynamic characteristic input capacitance c iss - 205 250 output capacitance c...100v v cc 1200v, t j 150 c -24-a 1) device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one...
Description    Fast S-IGBT in NPT-technology

File Size 383.19K  /  12 Page

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    IRFE9130

International Rectifier
Part No. IRFE9130
OCR Text ...akage forward ? ? -100 v gs = -20v i gss gate-to-source leakage reverse ? ? 100 v gs = 20v q g total gate charge ? ? 35 v gs = -10v, id ...100v, t j 150c suggested rg =7.5 ? repetitive rating; pulse width limited by maximum junc...
Description Simple Drive Requirements

File Size 198.78K  /  7 Page

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    FRS230D FRS230H FRS230R FN3224

Intersil Corporation
Part No. FRS230D FRS230H FRS230R FN3224
OCR Text ... 1mA VDS = VGS, ID = 1mA VGS = +20V VGS = -20V VDS = 200V, VGS = 0 VDS = 160V, VGS = 0 VDS = 160V, VGS = 0, TC = +125oC Time = 20s VGS = 10V, ID = 7A VGS = 10V, ID = 4A VDD = 100V, ID = 7A Pulse Width = 3s Period = 300s, Rg = 25 0 VGS 10 ...
Description 7A, 200V, 0.515 OHM, RAD HARD, N-CHANNEL POWER MOSFETS
7A/ 200V/ 0.515 Ohm/ Rad Hard/ N-Channel Power MOSFETs
From old datasheet system

File Size 48.18K  /  6 Page

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    IRHY3230CM JANSR2N7381 JANSF2N7381 JANSG2N7381 JANSH2N7381 IRHY7230CM IRHY8230CM

International Rectifier
Part No. IRHY3230CM JANSR2N7381 JANSF2N7381 JANSG2N7381 JANSH2N7381 IRHY7230CM IRHY8230CM
OCR Text ...leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 50 v gs =12v, i d = 9.4a q gs gate-to-source charge ? ? 10 nc v ds = 100v q gd gate-to-drain (?miller?) charge ? ? 2...
Description 9.4 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
   RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)

File Size 135.89K  /  8 Page

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    IRHNA63260 IRHNA64260 IRHNA67260 IRHNA68260

International Rectifier
Part No. IRHNA63260 IRHNA64260 IRHNA67260 IRHNA68260
OCR Text ... v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 240 v gs = 12v, i d = 63a q gs gate-to-source charge ? ? 70 nc v ds = 100v q gd gate-to-drain (?miller?) charge ? ? ...
Description 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package. Also available in 300, 600 and 1000kRad.

File Size 137.59K  /  8 Page

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    Cirrus Logic, Inc.
http://
Part No. MP39 MP39CL
OCR Text ...Cv s 100v boost voltage v s 20v output current, within soa 25a power dissipation, internal 125w input voltage, differential 20v input voltage, common mode v b temperature, pin solder - 10s 200c temperature, junction 2 175c temper...
Description Amplifiers - Operational PWR Op Amp 100V 10A OP-AMP, 10000 uV OFFSET-MAX, 2 MHz BAND WIDTH, DMA30
POWER OPERATIONAL AMPLIFIER

File Size 256.52K  /  4 Page

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    SGW25N12009 SGW25N120

Infineon Technologies AG
Part No. SGW25N12009 SGW25N120
OCR Text ...te LE IC(SC) V C E =0V,V GE =20V V C E = 20V, I C = 25A V C E = 25V, V G E = 0V, f= 1 M Hz V C C = 9 60V, I C = 25A V G E = 1 5V - 2150 160 110 225 13 240 V G E = 1 5V,t S C 10s 100V V C C 1200V, T j 150 C - 1) Allowe...
Description Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation

File Size 331.27K  /  11 Page

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    IRFB4310GPBF

International Rectifier
Part No. IRFB4310GPBF
OCR Text ...V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V f = 1MHz, open drain g Dynamic @ TJ = 25C (unless otherwise specified) Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Parameter Forward Tra...
Description HEXFETPower MOSFET

File Size 284.21K  /  8 Page

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For 2.0v-100v Found Datasheets File :: 8687    Search Time::2.5ms    
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