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  211.0 Datasheet PDF File

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    Electronic Theatre Controls, Inc.
Part No. EFM-2100TR
OCR Text 2110 ? 2170 mhz efm-2100 m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitabilit...
Description E-Series Surface Mount Mixer 2110-2170MHz E系列表面贴装混合110 - 2170MHz

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    NXP Semiconductors N.V.
Part No. BLF7G22L-160 BLF7G22LS-160
OCR Text ...(db) (%) (dbc) 2-carrier w-cdma 2110 to 2170 1300 28 43 18.0 30 ? 32 [1] blf7g22l-160_7g22ls-160 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights re served. product data sheet rev. 2.1...
Description Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
Power LDMOS transistor BLF7G22L-160<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;BLF7G22L-160<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
Power LDMOS transistor BLF7G22LS-160<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;BLF7G22LS-160<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;

File Size 1,107.65K  /  18 Page

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    飞思卡尔半导体(中国)有限公司
Part No. MRF18030BLR3
OCR Text ... 250 ma, p out = 30 w (cw) f = 2110 mhz f = 1710 mhz 1840 1880 1960 4.04 - j10.22 6.20 - j12.29 6.12 - j12.29 6.10 - j7.63 5.83 - j6.89 5.55 - j6.33 1990 2110 15.19 - j11.85 8.61 - j12.10 5.93 - j6.66 3.82 - j5.33 f = 1710 mhz f ...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 344.88K  /  8 Page

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    NXP Semiconductors N.V.
Part No. BLF7G22LS-100P
OCR Text ...(db) (%) (dbc) 2-carrier w-cdma 2110 to 2170 720 28 20 19.1 28.5 ? 34 [1] blf7g22l-100p_blf7g22ls-100p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all righ ts reserved. preliminary data shee...
Description Power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

File Size 671.16K  /  14 Page

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    Avago Technologies
Part No. HDSP-2503 HDSP-2113 HDSP-2112 HDSP-2111 HDSP-2107 HDSP-2110
OCR Text ...P-2112 HDSP-2502 Orange HDSP-2110 HDSP-2500 Yellow HDSP-2111 HDSP-2501 w w w .D at Sh a et e Green HDSP-2113 HDSP-2503 4U . om c Package Dimensions PIN FUNCTION ASSIGNMENT TABLE 42.59 (1.677) 5.33 ...
Description (HDSP-250x/-211x Series) Amart Alphanumeric Displays

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    NXP Semiconductors N.V.
Part No. BLF7G22L-250P BLF7G22LS-250P
OCR Text 2110 mhz to 2170 mhz. [1] test signal: 3gpp; test model 1; 64 dpch; par = 8.4 db at 0.01 % probability on ccdf; carrier spacing 5mhz. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low r th providing excellent ther...
Description 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.
Power LDMOS transistor BLF7G22L-250P<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;BLF7G22L-250P<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;

File Size 887.79K  /  14 Page

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    飞思卡尔半导体(中国)有限公司
Part No. 100B0R3BW 100B8R2CW
OCR Text ...le semiconductor technical data 2110 - 2170 mhz, 30 w, 28 v single w - cdma rf ldmos wideband integrated power amplifiers case 1329 - 09 to - 272 wb - 16 plastic mw4ic2230nbr1 mw4ic2230nbr1 mw4ic2230gnbr1 case 1329a - 03 to - 272 wb - 16 g...
Description RF LDMOS Wideband Integrated Power Amplifiers 射频LDMOS宽带集成功率放大

File Size 702.41K  /  16 Page

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    MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Part No. MRF5P21180R6 MRF5P21180
OCR Text ...lications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. * Typical 2-carrier W-CDMA Performance for VDD = 28 V...
Description N-Channel Enhancement-Mode Lateral MOSFET
RF Power Field Effect Transistor

File Size 406.67K  /  9 Page

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    MRF18030BLR3 MRF18030BLSR3

Freescale Semiconductor, Inc
Part No. MRF18030BLR3 MRF18030BLSR3
OCR Text ...e Semiconductor Zo = 25 f = 2110 MHz Zload f = 1710 MHz f = 2110 MHz f = 1710 MHz Zsource VDD = 26 V, IDQ = 250 mA, Pout = 30 W (CW) f MHz 1710 1785 1805 1840 1880 1960 1990 2110 Zsource 2.92 - j8.24 3.84 - j9.75 4.15 - j10.38 4....
Description RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS

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