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Infineon Technologies A...
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Part No. |
IPA60R190C6 IPA60R190C6-14
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OCR Text |
...sd & i d , t j =25 c (see table 22) maximum diode commutation speed 3) di f /dt - - 500 a/s insulation withstand voltage to-220 fullpak v is...6cm 2 cooling area 1) 1) device on 40mm*40mm*1.5mm one layer epoxy pcb fr4 with 6cm 2 copper area (t... |
Description |
Metal Oxide Semiconductor Field Effect Transistor
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File Size |
1,265.22K /
19 Page |
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INFINEON[Infineon Technologies AG]
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Part No. |
Q67040-S4340 SKP06N60 Q67040-S4230 Q67040-S4231 SKA06N60 SKB06N60
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OCR Text |
... V, I C =6 A V G E = 15 V T O - 22 0A B V G E = 15 V ,t S C 10 s V C C 6 0 0 V, T j 1 5 0 C
2
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for collector connection. PCB is vertical without blown... |
Description |
Fast S-IGBT in NPT-Technology with An... IGBTs & DuoPacks - 6A 600V TO263AB SMD IGBT Diode IGBTs & DuoPacks - 6A 600V TO220-3-31 (Fullpack) IGBT Diode Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
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File Size |
446.91K /
15 Page |
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![BSL307SP BSL307SP07 BSL307SPL6327](Maker_logo/infineon_technologies_ag.GIF)
Infineon Technologies AG
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Part No. |
BSL307SP BSL307SP07 BSL307SPL6327
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OCR Text |
...rain current t a =25c i d puls -22 avalanche energy, single pulse i d =-5.5 a , v dd =-25v, r gs =25 ? e as 44 mj reverse diode d v /d t i...6cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air;... |
Description |
OptiMOS-P Small-Signal-Transistor 5.5 A, 30 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET
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File Size |
105.08K /
8 Page |
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it Online |
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![BSO4822](Maker_logo/infineon_technologies_ag.GIF)
http:// Infineon Technologies AG
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Part No. |
BSO4822
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OCR Text |
....8 21 17.5 2.9
5.5 12.2 26.2 22 -
nC
VDD =15V, ID=12.7A, VGS =0 to 5V VDS =15V, ID =12.7A, VGS =0
V(plateau) VDD =15V, ID=12.7A
V
IS ISM
TA=25C
-
0.83 29 25
1.9 51 1.2 36 31
A
V ns nC
Page 3
2002-01... |
Description |
OptiMOS Small-Signal-Transistor Low Voltage MOSFETs - OptiMOS Small Signal MOSEFT, 30V, SO-8, RDSon = 10mOhm, 12.5A, LL
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File Size |
99.03K /
8 Page |
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it Online |
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