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  22.6cm Datasheet PDF File

For 22.6cm Found Datasheets File :: 393    Search Time::1.625ms    
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    Infineon Technologies A...
Part No. IPA60R190C6 IPA60R190C6-14
OCR Text ...sd & i d , t j =25 c (see table 22) maximum diode commutation speed 3) di f /dt - - 500 a/s insulation withstand voltage to-220 fullpak v is...6cm 2 cooling area 1) 1) device on 40mm*40mm*1.5mm one layer epoxy pcb fr4 with 6cm 2 copper area (t...
Description Metal Oxide Semiconductor Field Effect Transistor

File Size 1,265.22K  /  19 Page

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    BSL211SP BSL211SPL6327

Infineon Technologies AG
Part No. BSL211SP BSL211SPL6327
OCR Text ...-19.5 -20 -20.5 -21 -21.5 -22 -22.5 -23 -23.5 v -24.5 bsl211sp v (br)dss 2007-0 2-08 page 8 rev 1.1 bsl211sp published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? ...
Description OptiMOS-P Small-Signal-Transistor
4.7 A, 20 V, 0.067 ohm, P-CHANNEL, Si, POWER, MOSFET

File Size 96.59K  /  8 Page

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    INFINEON[Infineon Technologies AG]
Part No. Q67040-S4340 SKP06N60 Q67040-S4230 Q67040-S4231 SKA06N60 SKB06N60
OCR Text ... V, I C =6 A V G E = 15 V T O - 22 0A B V G E = 15 V ,t S C 10 s V C C 6 0 0 V, T j 1 5 0 C 2 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for collector connection. PCB is vertical without blown...
Description Fast S-IGBT in NPT-Technology with An...
IGBTs & DuoPacks - 6A 600V TO263AB SMD IGBT Diode
IGBTs & DuoPacks - 6A 600V TO220-3-31 (Fullpack) IGBT Diode
Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 446.91K  /  15 Page

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    IDP30E60 Q67040-S4488 D30E60 IDB30E60 Q67040-S4376

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INFINEON[Infineon Technologies AG]
Part No. IDP30E60 Q67040-S4488 D30E60 IDB30E60 Q67040-S4376
OCR Text ...x. Unit ns 126 171 178 19 22 24 1100 1950 2150 4 4.6 4.8 A nC - Peak reverse current V R=400V, IF = 30A, diF/dt=1000A/s, Tj =25C V R=400V, IF =30A, diF/dt=1000A/s, T j=125C V R=400V, IF =30A, diF/dt=1000A/s, T j=150C Reverse re...
Description Fast Switching EmCon Diode
Silicon Power Diodes - 30A EmCon in TO263
Silicon Power Diodes - 30A EmCon in TO220-2

File Size 194.21K  /  9 Page

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    BSL307SP BSL307SP07 BSL307SPL6327

Infineon Technologies AG
Part No. BSL307SP BSL307SP07 BSL307SPL6327
OCR Text ...rain current t a =25c i d puls -22 avalanche energy, single pulse i d =-5.5 a , v dd =-25v, r gs =25 ? e as 44 mj reverse diode d v /d t i...6cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air;...
Description OptiMOS-P Small-Signal-Transistor
5.5 A, 30 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET

File Size 105.08K  /  8 Page

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    BSO4822

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Infineon Technologies AG
Part No. BSO4822
OCR Text ....8 21 17.5 2.9 5.5 12.2 26.2 22 - nC VDD =15V, ID=12.7A, VGS =0 to 5V VDS =15V, ID =12.7A, VGS =0 V(plateau) VDD =15V, ID=12.7A V IS ISM TA=25C - 0.83 29 25 1.9 51 1.2 36 31 A V ns nC Page 3 2002-01...
Description OptiMOS Small-Signal-Transistor
Low Voltage MOSFETs - OptiMOS Small Signal MOSEFT, 30V, SO-8, RDSon = 10mOhm, 12.5A, LL

File Size 99.03K  /  8 Page

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    SGB04N60 SGB04N6006

Infineon Technologies AG
Part No. SGB04N60 SGB04N6006
OCR Text ...turn-on delay time t d(on) - 22 26 rise time t r - 15 18 turn-off delay time t d(off) - 237 284 fall time t f - 70 84 ns turn-on energy e on - 0.070 0.081 turn-off energy e off - 0.061 0.079 total switching energy ...
Description Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

File Size 785.93K  /  11 Page

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    BSO4410

Infineon Technologies AG
Part No. BSO4410
OCR Text ...VGS 42 BSO4410 28 A 24 22 Ptot = 2.5W i VGS [V] a 2.8 b 3.0 3.2 3.4 3.6 3.8 4.0 4.5 10.0 m 36 32 28 24 d e hgf e 20 c d RDS(on) f ID 18 16 14 12 10 8 6 4 2 0 0 0.5 1 1.5 2 2.5 3 3.5 a b c d e...
Description OptiMOS Small-Signal-Transistor

File Size 107.74K  /  8 Page

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    BTS94900

Infineon Technologies AG
Part No. BTS94900
OCR Text ... 150 c r ds(on) - - 18 30 22 44 m ? on-state resistance v in = 10 v, i d = 19 a, t j = 25 c v in = 10 v, i d = 19 a, t j = 150 c r ds(on) - - 14 25 18 36 nominal load current (iso 10483) v in = 10 v, v ds = 0.5 v...
Description Smart Lowside Power Switch

File Size 216.41K  /  11 Page

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For 22.6cm Found Datasheets File :: 393    Search Time::1.625ms    
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