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Agilent (Hewlett-Packard)
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| Part No. |
AMMC-6430
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| OCR Text |
...
Units V V mA dBm C C
Min. -3
Max. 7 0.5 1500 23 +150
-65
+150 +300
Maximum Assembly Temp C (60 sec max)
Note: 1. Operati...5V, Id(Q)=900 mA, Zo=50
Symbol Gain P-1dB P-3dB OIP3
Parameters and Test Conditions Small-sig... |
| Description |
AMMC-6430 · 25-33 GHz 1W Power Amplifier
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| File Size |
406.67K /
8 Page |
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ANADIGICS, Inc.
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| Part No. |
AWT6130
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| OCR Text |
3.5v 29dbm Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.0 FEATURES
* * * * * * * * InGaP HBT Technology High Efficiency: 48% AMPS, 37% CDMA Low Quiescent Current: 50 mA Low Leakage Current in Shutdown Mode: <1 A Optimized for a 5... |
| Description |
Cellular Dual Mode AMPS/CDMA 3.5v 29dbm Power Amplifier Module
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| File Size |
155.93K /
8 Page |
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it Online |
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ANADIGICS, Inc.
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| Part No. |
AWT6131 AWT6131M7P8
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| OCR Text |
3.5v/29dbm Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.0
FEATURES
* * * * * * * * InGaP HBT Technology High Efficiency: 37% Low Quiescent Current: 50 mA Low Leakage Current in Shutdown Mode: <1 A Optimized for a 50 Sy... |
| Description |
PCS/CDMA 3.5v/29dbm Linear Power Amplifier Module
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| File Size |
206.52K /
12 Page |
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it Online |
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ANADIGICS, Inc.
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| Part No. |
AWT6133 AWT6133M7P8
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| OCR Text |
3.5v/29dbm Linear Power Amplifier Module
Data Sheet - Rev 2.0
FEATURES
* * * * * * * * * InGaP HBT Technology High Efficiency: 38% Low Quiescent Current: 50 mA Low Leakage Current in Shutdown Mode: <1 A VREF = +2.85 V (+2.7 V min over ... |
| Description |
PCS/CDMA 3.5v/29dbm Linear Power Amplifier Module CDMA.5V/29dbm线性功率放大器模块
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| File Size |
266.67K /
8 Page |
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it Online |
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TriQuint Semiconductor, Inc.
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| Part No. |
TGA4525-SM
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| OCR Text |
...C
F = 17 - 27 GHz
0.04
3
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Sep 2009 (c...5V 6V 7V 8V
28
29
30
Frequency (GHz)
0
Vd = 7V, Id = 760mA
-2 -4 -6 Return Loss (... |
| Description |
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| File Size |
573.93K /
13 Page |
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it Online |
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SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
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| Part No. |
FLM3135-18F
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| OCR Text |
...-45dBc@Po = 32.0dBm Broad Band: 3.1 ~ 3.5GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed Package
DESCRIPTION
The FLM3135-18F is ...5V, VGS = 0V VDS = 5V, IDS = 4800mA VDS = 5V, IDS = 480mA IGS = -480A Min. -0.5 -5.0 42.0 9.5 -42 Li... |
| Description |
C-Band Internally Matched FET
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| File Size |
286.25K /
4 Page |
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Toshiba
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| Part No. |
TMD3438-1
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| OCR Text |
...0 CONDITION UNIT GHz dBm MIN. 3.4 29.0 TYP. MAX. 3.8
u
u
The information contained herein is presented only as a guide for the...5V,VGG=-5V
P1dB(dBm) G1dB(dBm) 35 P1dB (dBm) G1dB (dBm) 33
IDD[@Pin=-6dBm] (mA) 600
34
5... |
| Description |
Microwave Power MMIC Amplifier
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| File Size |
236.93K /
4 Page |
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it Online |
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Price and Availability
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