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INFINEON[Infineon Technologies AG]
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| Part No. |
Q67040-S4469 IDB45E60 IDP45E60 Q67040-S4375
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| OCR Text |
... 45 30 15 0 25 50 75 100 125 20 40 50
IF
175
30
10
C TC
0 25
50
75
100
125
C TC
175
3 Typ. diode forward current IF = f (VF)
140
4 Typ. diode forward voltage VF = f (Tj)
2.4
A
-55C 25C 100C 150C... |
| Description |
Silicon Power Diodes - 45A EmCon in TO220-2
Silicon Power Diodes - 45A EmCon in TO263
Fast Switching EmCon Diode 快速开关快恢复二极
From old datasheet system
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| File Size |
194.93K /
9 Page |
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it Online |
Download Datasheet
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTDF400U120G
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| OCR Text |
...or terminals M5 M6
Min 2500 -40 -40 -40 2.5 3
Typ
Max 0.08
Unit C/W V
www.microsemi.com
2-3
APTDF400U120G - Rev 1 June, 2006
150 125 100 3.5 4 250
C N.m g
APTDF400U120G
LP4 Package outline (dimensions in mm)
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| Description |
Single diode Power Module
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| File Size |
182.81K /
3 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
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| Part No. |
FG1000BV-90DA FD2000BV-90DA
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| OCR Text |
... 120 100 80 60 130 110 90 70 50 40 800 0 200 400 600 700 100 300 500 360? q resistive, inductive load q = 30? 90? 180? dc 270? 60? 120? 8...1000a, v d = 2250v d it /d t = 500a/ m s d ig /d t = 10a/ m s t j = 125?c on-state power dissipa... |
| Description |
Gate turn-off thyristor for high power inverter use press pack type
MITSUBISHI GATE TURN-OFF THYRISTORS HIGH POWER INVERTER USE PRESS PACK TYPE
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| File Size |
72.29K /
4 Page |
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it Online |
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Samsung Electronic
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| Part No. |
K3P9VU1000A-YC
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| OCR Text |
... q 9 q 2 q 10 46 45 44 43 42 41 40 38 36 35 34 33 32 31 30 29 28 27 26 25 q 15/ a- 1 q 7 q 14 q 6 q 13 q 5 q 12 q 11 v ss a 2 a 19 v ss v ss...1000a-yc cmos mask rom test conditions item value input pulse levels 0.45v to 2.4v input rise and fa... |
| Description |
128M-Bit (16Mx8 /8Mx16) CMOS MASK ROM Data Sheet
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| File Size |
62.14K /
4 Page |
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it Online |
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Mitsubishi Electric Corporation
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| Part No. |
FD1000FH-56
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| OCR Text |
...Ratings 1570 1000 25 2.6 x 105 -40 ~ +125 -40 ~ +150 26.5 ~ 35.3 Unit V V V Unit A A kA A 2s C C kN g
Recommended value 29.4 Standard val...1000A, diF/dt = -30A/s, VR = 150V, Tj = 125C Junction to fin Min -- -- -- -- Limits Typ -- -- -- -- ... |
| Description |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
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| File Size |
43.86K /
3 Page |
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it Online |
Download Datasheet |
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Price and Availability
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