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				MOTOROLA[Motorola, Inc]
Part No.	MRF317
OCR Text	...0 -- -- -- -- -- -- -- -- -- -- 5.0 Vdc Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) hFE 10 25 80 -...08 5.33 18.29 18.54 0.10 0.15 10.29 11.17 3.81 4.06 3.81 4.31 2.92 3.30 3.05 3.30 11.94 12.57 MILLIM...
Description	BROADBAND RF POWER TRANSISTOR NPN SILICON
File Size	113.55K / 6 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	SI4435DY SI4435DYTR
OCR Text	... VDSS = -30V 3 6 4 5 RDS(on) = 0.020 Description These P-channel HEXFET(R) Power MOSFETs from International Rectifier ut...08 0.08 0.06 0.06 VGS= - 4.5V 0.04 0.04 Id = -8.0A 0.02 0.02 VGS = -10V ...
Description	-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss=-30V Rds(on)=0.020ohm Power MOSFET(Vdss=-30V, Rds(on)=0.020ohm Power MOSFET(Vdss=-30V/ Rds(on)=0.020ohm SHROUD, PRIVACY; RoHS Compliant: Yes
File Size	81.44K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] ON Semi
Part No.	SN75175 SN75175D SN75175_D ON2965 SN75175N
OCR Text	... Unit Load Operates from Single 5.0 V Supply Lower Power Requirements Plug-In Replacement for MC3486 16 1 16 1 N SUFFIX PLASTIC PACKAGE ...08 ISSUE R B 1 8 -A- 16 9 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. C...
Description	From old datasheet system QUAD EIA-485 LINE RECEIVER WITH THREE-STATE OUTPUTS
File Size	136.12K / 8 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5019HVR
OCR Text	...ate Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts 050-5816 Rev B Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Ze...08 (.200) BSC 050-5816 Rev B Dimensions in Millimeters and (Inches) APT's devices are covered...
Description	POWER MOS V 500V 24A 0.190 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.96K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5026HVR
OCR Text	...26HVR UNIT Volts Amps 500 18.5 74 30 40 200 1.6 -55 to 150 300 18.5 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient...08 (.200) BSC 050-5820 Rev B Dimensions in Millimeters and (Inches) APT's devices are covered...
Description	POWER MOS V 500V 18.5A 0.260 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.64K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT8058HVR
OCR Text	...58HVR UNIT Volts Amps 800 13.5 54 30 40 250 2.0 -55 to 150 300 13.5 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient...08 (.200) BSC 050-5815 Rev A Dimensions in Millimeters and (Inches) APT's devices are covered...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 13.5A 0.580 Ohm
File Size	60.35K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8067HVR
OCR Text	...67HVR UNIT Volts Amps 800 11.5 46 30 40 200 1.6 -55 to 150 300 11.5 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient...08 (.200) BSC 050-5818 Rev B Dimensions in Millimeters and (Inches) APT's devices are covered...
Description	POWER MOS V 800V 11.5A 0.670 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.92K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8075BVFR
OCR Text	...ate Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts 050-5632 Rev - Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS...
Description	POWER MOS V 800V 12A 0.750 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	69.90K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology]
Part No.	APT8075BVR APT8075
OCR Text	...ate Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts 050-5608 Rev B Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 12A 0.750 Ohm
File Size	61.94K / 4 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-21186 ATF-21186-STR ATF-21186-TR1
OCR Text	5 - 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-21186 Features * Low Noise Figure: 0.5 dB Typ. @ 2 GHz * High Output ...08 S12 Mag. 0.051 0.096 0.131 0.158 0.177 0.188 0.193 0.193 0.191 0.185 0.179 0.172 0.167 0.162 0...
Description	0.5-6 GHz General Purpose Gallium Arsenide FET
File Size	67.13K / 8 Page	View it Online	Download Datasheet

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