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  5.25.8ghz Datasheet PDF File

For 5.25.8ghz Found Datasheets File :: 780    Search Time::1.907ms    
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    CFH800

Infineon Technologies A...
ETC
INFINEON[Infineon Technologies AG]
Part No. CFH800
OCR Text ...ol VDS VDG VGS ID TCh Tstg Ptot 5.5 6.5 -2.0 160 150 -65...+150 350 Unit V V V mA C C mW RthChS 198 K/W Infineon Technologies...25 200 0.56 0.50 15 17 8.5 13 140 0.0 10 1 - mA V A mS dB Pinch-off voltage Gate leakage cu...
Description Typical Common Source S - Parameters

File Size 71.94K  /  7 Page

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    Q62702-F1490 BFR180W

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1490 BFR180W
OCR Text ...ion Symbol Values 8 10 10 2 4 0.5 mW 30 150 - 65 ... + 150 - 65 ... + 150 790 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) ...25 - IC = 3 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 5 V, f ...
Description NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA)
From old datasheet system

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    BFS482 Q62702-F1573

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BFS482 Q62702-F1573
OCR Text ... 482 RGs Q62702-F1573 1/4 = B 2/5 = E 3/6 = C Package SOT-363 data below is of a single transistor Maximum Ratings Parameter Collec...25 0.20 0.15 fT 6.0 5V 5.0 3V 2V 4.0 3.0 2.0 0.10 0.05 0.00 0 1.0 0.0 4 8 12 16 V 24 0 ...
Description NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA.)
From old datasheet system

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    EC3H04C 1224

Sanyo Semicon Device
Sanyo Electric Co., Ltd.
Part No. EC3H04C 1224
OCR Text ...s unit : mm 2184 [EC3H04C] 0.5 0.3 0.05 0.6 Low noise : NF=1.7dB typ (f=2GHz). Hige cut-off frequency : fT=8GHz typ (VCE=1V). Low ope...25.3 S22 0.913 0.780 0.660 0.613 0.560 0.550 0.569 0.548 0.529 0.560 0.536 0.588 0.553 0.615 0.575 S...
Description NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier and OSC Applications
From old datasheet system
High-Frequency Low-Noise Amplifier and OSC Applications 高频低噪声放大器和OSC应用

File Size 33.74K  /  6 Page

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    Maxim
Part No. MAX2645
OCR Text ...nt in Shutdown Mode o +3.0V to +5.5V Single-Supply Operation o 10-Pin MAX-EP Package (5.0mm x 3.0mm) General Description The MAX2645 is ...25 19 1 0.5 3.0 TYP MAX 3800 15.4 -8.0 0.7 UNITS MHz dB dB dB dBm dBm dB dB s s AC ELECTRICAL SPE...
Description 3.4GHz to 3.8GHz SiGe Low-Noise Amplifier/ PA Predriver
From old datasheet system

File Size 263.98K  /  12 Page

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    MAX3866 MAX3866E_D MAX3866E/D

Maxim Integrated Products, Inc.
Maixm
Part No. MAX3866 MAX3866E_D MAX3866E/D
OCR Text ...TERISTICS (VCCD = VCCS = +3.3V 5% or VCCD = +5.0V 10%, VCCS = open, Tj = -40C to +120C, unless otherwise noted. Typical values are at +3.3V...25 3 0.9 8.0 70 80 30 2.5Gbps, 223 - 1 PRBS, BER 10-10, CIN = 0.5pF, Tj = +120C CIN = 0.5pF, Tj = +...
Description 2.5Gbps, 3.3V Combined Transimpedance/Limiting Amplifier

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    PHILIPS[Philips Semiconductors]
Part No. SA620DK SA620
OCR Text ...ND 2 LNA IN 3 LNA GND 4 LNA GND 5 20 VCC 19 LNA GND 18 LNA OUT 17 LNA BIAS 16 MIXER IN 15 MIXER GND 14 MIXER BYPASS 13 MIXER OUT 12 OSC GND ...25 -30 -45 -16 1200 (max) -4.5 10.5 17.5 4.5 -1.5 1.9 +3 13 -6 dB dB dB/C dB/C dB/MHz dB dB dB dBm d...
Description Low voltage LNA mixer and VCO - 1GHz
Low voltage LNA, mixer and VCO - 1GHz

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    SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. CLY15 Q62702-L99
OCR Text ...r frequencies from 400 MHz to 2.5 GHz * Operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8 GHz typ. 31.5 dBm * Efficiency better 50%...25 20 15 10 5 0 -5 0 5 10 15 20 25 30 Pin [dBm] 70 60 50 40 30 20 Pout 10 PAE 0 @ 3V/1.4A Power C...
Description GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) 砷化镓场效应管(功率放大器,对于00兆赫2.5千兆赫频率的移动电话
From old datasheet system

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    SMA540BTR SMA540B 9252

STMICROELECTRONICS[STMicroelectronics]
Part No. SMA540BTR SMA540B 9252
OCR Text ... E, 2 Parameter Value 4.5 1.5 40 4 4 120 -40 to +85 -65 to +150 150 Unit V V mA mA mA mW oC oC o C THERMAL RESISTANCE Rth...25 oC,ZL/S = 50, tested in circuit shown in fig.1, unless otherwise specified ) Symbol Gms (1) 2 ...
Description From old datasheet system
ACTIVE BIASED RF TRANSISTOR

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    Matsshita / Panasonic
Part No. 2SC3704 0611
OCR Text ... q q q q 0.650.15 +0.25 1.5 -0.05 0.650.15 Low noise figure NF. High gain. High transition frequency fT. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine p...
Description Transistor
From old datasheet system

File Size 46.25K  /  3 Page

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For 5.25.8ghz Found Datasheets File :: 780    Search Time::1.907ms    
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