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7.5-12ghz Datasheet PDF File

For 7.5-12ghz Found Datasheets File :: 363 Search Time::1.86ms
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				Transcom, Inc.
Part No.	TC3918
OCR Text	7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw ...5 g l linear power gain, f = 12ghz v ds = 4 v 11 13 db i ds drain-source curr...
Description	Packaged Single-Bias Low Noise PHEMT GaAs FETs
File Size	225.07K / 3 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc.
Part No.	EPA160A-100P
OCR Text	...ltage igs=1.6ma -7 -14 v rth thermal resistance (au-sn eutectic attach) 33* o c/w ? overall rth depends on cas...5.4611 71.1 0.0401 7.73 0.3355 -120.16 4 0.8519 -175.22 4.1206 55.4 0.0391 0.48 0.3633 -13...
Description	High Efficiency Heterojunction Power FET
File Size	45.63K / 2 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF1951A_1 MGF1951A MGF1951A1
OCR Text	...f=12GHz,Pin=-5dBm -8 35 -0.3 11 7 Limits TYP. -15 60 -1.4 13 9 MAX -120 -3.5 --- Unit V mA V dBm dB MITSUBISHI (1/5) June /2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1951A Microwave Power MES FET (Leadless Ce...
Description	Microwave Power MES FET
File Size	142.27K / 5 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc.
Part No.	EPA040A EPA040AV
OCR Text	...breakdown voltage igs=1.0ma - 7 - 14 - 7 - 14 v rth thermal resistance (au - sn eutectic attach) 105 7...5 0.666 - 12.8 21.0 0.856 132.6 1.642 - 6.5 0.065 - 8.2 0.341 - 155.6 2.0 ...
Description	High Efficiency Heterojunction Power FET
File Size	46.62K / 2 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGFC4419G
OCR Text	... ID=10mA ) f (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 Magn. 0.994 0.976 0.950 0.917 0.880 0.842 0.805 0.771 0.739 0.711 0.687 0.666 0.648 0.634 0.622 0.613 0.607 0.603 0.600 0.600 0.601 0.603 0.606 0.610 0...
Description	InGaAs HEMT Chip
File Size	51.23K / 5 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc.
Part No.	EPA030D
OCR Text	... drain to source voltage 10 v 7 v v gs gate to source voltage -6 v -3.5 v i ds drain current idss idss i gsf forward gate current 15 ma 2.5 ma p in input power 15 dbm @ 3db compression p t total power dissipation 1....
Description	High Performance Heterojunction Dual-Gate FET
File Size	88.92K / 2 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc.
Part No.	EPA030C EPA030CV
OCR Text	...oltage i gs = 1.0ma -7 -14 -7 -14 v r th thermal resistance(au-sn eutectic attach) 125 95 o c/w maximum ...5 0.032 63.5 0.726 -18.3 22.0 0.854 128.3 1.647 -5.9 0.068 -18.6 0.416 -129.4 4.0 0.883 -85.5 6...
Description	High Efficiency Heterojunction Power FET
File Size	90.65K / 2 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc.
Part No.	EPA030B
OCR Text	....4 8.447 140.3 0.015 63.7 0.915 - 18.5 23.0 0.919 129.8 4.615 - 74.5 0.030 64.6 1.285 - 140.4 4.0 0.917 - 56.0 8.042 128.6 0.019 55.8 0.901 - 23.4 24.0 0.944 125.5 4.605 - 89.6 ...
Description	High Performance Heterojunction Dual-Gate FET
File Size	40.90K / 2 Page	View it Online	Download Datasheet

				Transcom, Inc.
Part No.	TC2101
OCR Text	7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw ...5 db typical noise figure at 12 ghz photo enlargement high associated gain: ga = 8 db typical at...
Description	Plastic Packaged Low Noise PHEMT GaAs FETs
File Size	163.25K / 4 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc.
Part No.	EPA240B
OCR Text	...e breakdown voltage igs=2.4ma -7 -14 -7 -14 v rth thermal resistance (au-sn eutectic attach) 20 15 o c/w maximum ra...5.7w 9.1w 7.6w note: 1. exceeding any of the above ratings may result in permanent damage. ...
Description	8-12V high efficiency heterojunction power FET
File Size	34.15K / 2 Page	View it Online	Download Datasheet

For 7.5-12ghz Found Datasheets File :: 363 Search Time::1.86ms
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