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Microsemi, Corp.
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Part No. |
MRF517
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Description |
Small Signal, Up to 1 GHz, Class A, Common Emitter; fO (MHz): 0; fT (MHz): 3000; GNF (dB): 10; VCE (V): 15; IC (mA): 60; NF min (dB): 2.5; case style: TO-39 UHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-39
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File Size |
440.27K /
5 Page |
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Microsemi, Corp. ADPOW
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Part No. |
MS1227
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Description |
HF 2-50 MHz, Class C, Common Emitter; P(out) (W): 20; P(in) (W): 0.65; Gain (dB): 15; Vcc (V): 12.5; Cob (pF): 100; fO (MHz): 0; case style: M113 HF BAND, Si, NPN, RF POWER TRANSISTOR RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
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File Size |
110.61K /
3 Page |
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VISAY[Vishay Siliconix] Vishay Intertechnology,Inc. Vishay Intertechnology, Inc.
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Part No. |
173D225X0035V 173D225X0050W 173D225X0015U 173D225X0020V 173D225X0025V 173D225X9010U 173D225X9015U 173D225X9020V 173D105X0020U 173D105X9020U 173D107X0020Y 173D125X9020U 173D127X9006Y 173D126X9002V 173D826X9020Y 173D106X0015W 173D107X0015Y 173D155X0015U 173D156X0015W 173D685X0015V 173D686X0015Y 173D226X9004V 173D825X9004V 173D106X0010V 173D107X0010Y 173D156X0010W 173D475X0010V 173D476X0010X 173D685X0010V 173D686X0010Y 173D684X0050V 173D684X0025U 173D684X0035V 173D187X9006Y 173D227X0006Y 173D334X9035U 173D124X9050U 173D127X9010Y 173D127X9015Y 173D186X9010W 173D186X9015X 173D275X9015V 173D276X9010X 173D276X9015X 173D104X0035U 173D104X0050U 173D104X9035U 173D104X9050U 173D105X0025U 173D105X0035V 173D105X0050V 173D825X9002U 173D107X0006Y 173D126X9050Y 173D106X9050Y 173D156X0050Y 173D156X9050Y 173D186X9050Y 173D396X9002W 173D396X9035Y 173D125X9025V 173D156X9025X 173D186X9020X 173D186X9025Y 173D225X9025V 173D275X9020V 173D275X9025V 173D226X9002V 173D276X9002V 173D336X9002V 173D336X0035Y 173D336X9004W 173D336X9006W 173D336X0002V 173D336X9010X 173D336X9015X 173D336X9020Y 173D335X0035W 173D335X0050X 173D335X9006U 173D186X9035Y 173D126X9035Y 173D154X9035U 173D125X9035V 173D156X9035Y 173D225X90
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Description |
Solid Tantalum Capacitors, Solid Electrolyte Tantalex, Axial Leaded, Molded case, Standard Range Solid-Electrolyte TANTALEX Capacitors Axial-Leaded Molded-case Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:30; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell style:Straight Plug; Circular Contact Gender:Socket; Insert Arrangement:18-30 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT07; Number of Contacts:16; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell style:Jam Nut Receptacle CONNECTOR ACCESSORY Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Aluminum Alloy; Series:SW3106; No. of Contacts:10; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell style:Straight Plug; Gender:Female PT 30C 1#16,29#20 SKT PLUG PT 30C 1#16,29#20 SKT 插头 Solid-Electrolyte TANTALEX Capacitors, Axial-Leaded, Molded-case 固态电解质TANTALEX电容,轴向引线,塑壳 LED PNL MT 7MM 6V CHROME RED 固态电解质TANTALEX电容,轴向引线,塑壳 OSC 5V SMT 7X5 CMOS PROGRM 固态电解质TANTALEX电容,轴向引线,塑壳 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT07; No. of Contacts:16; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell style:Jam Nut Receptacle 固态电解质TANTALEX电容,轴向引线,塑壳 Solid-Electrolyte TANTALEX Capacitors, Axial-Leaded, Molded-case
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File Size |
78.02K /
6 Page |
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![GAL16V8 GAL16V8AS-20QC3 GAL16V8AS GAL16V8AS-10EB1 GAL16V8AS-10EB3 GAL16V8AS-10EC1 GAL16V8AS-10EC3 GAL16V8AS-10HB1 GAL16V](Maker_logo/stmicroelectronics.GIF)
STMicroelectronics N.V. 意法半导 ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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Part No. |
GAL16V8 GAL16V8AS-20QC3 GAL16V8AS GAL16V8AS-10EB1 GAL16V8AS-10EB3 GAL16V8AS-10EC1 GAL16V8AS-10EC3 GAL16V8AS-10HB1 GAL16V8AS-10HB3 GAL16V8AS-10HC1 GAL16V8AS-10HC3 GAL16V8AS-10QB1 GAL16V8AS-10QB3 GAL16V8AS-10QC1 GAL16V8AS-10QC3 GAL16V8AS-12EB1 GAL16V8AS-12EB3 GAL16V8AS-12EC1 GAL16V8AS-12EC3 GAL16V8AS-12HB1 GAL16V8AS-12HB3 GAL16V8AS-12HC1 GAL16V8AS-12HC3 GAL16V8AS-12QB1 GAL16V8AS-12QB3 GAL16V8AS-12QC1 GAL16V8AS-12QC3 GAL16V8AS-15EB1 GAL16V8AS-15EB3 GAL16V8AS-15EC1 GAL16V8AS-15EC3 GAL16V8AS-15HB1 GAL16V8AS-15HB3 GAL16V8AS-15HC1 GAL16V8AS-15HC3 GAL16V8AS-15QB1 GAL16V8AS-15QB3 GAL16V8AS-15QC1 GAL16V8AS-15QC3 GAL16V8AS-20EB1 GAL16V8AS-20EB3 GAL16V8AS-20EC1 GAL16V8AS-20EC3 GAL16V8AS-20HB1 GAL16V8AS-20HB3 GAL16V8AS-20HC1 GAL16V8AS-20HC3 GAL16V8AS-20QB1 GAL16V8AS-20QB3 GAL16V8AS-20QC1 -GAL16V8AS-20HB3 -GAL16V8AS-20EC1 -GAL16V8AS-20EC3 -GAL16V8AS-10QC3
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Description |
E2PROM CMOS PROGRAMMABLE LOGIC DEVICE E2PROM的可编程逻辑器件的CMOS EMI/RFI FILTER IGBT MODULE, TRENCH, 600V, 6 PACK; Transistor type:3-Phase Bridge Inverter; Voltage, Vces:600V; Current, Ic continuous a max:174A; Voltage, Vce sat max:1.9V; case style:SEMITOP 4; Current, Icm pulsed:400A; Temperature, Tj RoHS Compliant: Yes IGBT MODULE, 6 PACK 600VIGBT MODULE, 6 PACK 600V; Transistor type:IGBT; case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2.2V; Current, Ic continuous a max:24A; Current, Icm pulsed:22A; Power, Pd:1700W; Time, rise:30ns; EPROM CMOS Programmable Logic Device
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File Size |
736.53K /
14 Page |
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![24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR ST25C16B6TR ST25C16M1TR ST25C16M3TR ST25C16M5TR ST25C16M6TR ST24C16 ST](Maker_logo/stmicroelectronics.GIF)
STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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Part No. |
24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR ST25C16B6TR ST25C16M1TR ST25C16M3TR ST25C16M5TR ST25C16M6TR ST24C16 ST24C16B1TR ST24C16B3TR ST24C16B5TR ST24C16B6TR ST24C16M1TR ST24C16M3TR ST24C16M5TR ST24C16M6TR ST24W16 ST24W16B1TR ST24W16B3TR ST24W16B5TR ST24W16B6TR ST24W16M1TR ST24W16M3TR ST24W16M5TR ST24W16M6TR ST25W16 ST25W16B1TR ST25W16B3TR ST25W16B5TR ST25W16B6TR ST25W16M1TR ST25W16M3TR ST25W16M5TR ST25W16M6TR
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Description |
MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护 MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/case:MICRO FOOT; Leaded Process Compatible:No MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes (ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16/8/4/2/1KbitSerialICBusEEPROM
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File Size |
125.39K /
17 Page |
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it Online |
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![X40020V14I-C X40020V14I-B X40020V14I-A](Maker_logo/intersil_corporation.GIF)
Intersil Corporation
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Part No. |
X40020V14I-C X40020V14I-B X40020V14I-A
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Description |
DIODE, STANDARD, 95A, 400V, STUD; Voltage, Vrrm:400V; Current, If av:95A; case style:E12; Current, Ifs max:700A; Diode type:Standard recovery; Polarity, diode:Stud Anode; Thread size:M8; Voltage, forward at If:1.5V RoHS Compliant: Yes Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:1600V; Forward Current Avg Rectified, IF(AV):50A; Non Repetitive Forward Surge Current Max, Ifsm:700A; Forward Voltage Max, VF:1.6V; Package/case:SO-32B DIODE, STUD 50A 1200VDIODE, STUD 50A 1200V; Voltage, Vrrm:1200V; Current, If av:50A; Current, Ifs max:700A; Voltage, forward at If:1.6V; case style:E12; Thread size:M8; Diode type:Standard recovery; Polarity, diode:Stud Anode
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File Size |
339.46K /
24 Page |
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it Online |
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Advanced Power Technolo... ADPOW[Advanced Power Technology] Microsemi, Corp.
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Part No. |
MS1007
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Description |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS HF 2-30 MHz, Class AB, Common Emitter; fO (MHz): 0; P(out) (W): 150; P(in) (W): 6; Gain (dB): 14; Vcc (V): 50; ICQ (A): 100; case style: M174 HF BAND, Si, NPN, RF POWER TRANSISTOR
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File Size |
157.18K /
4 Page |
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Microsemi, Corp.
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Part No. |
2731-20
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Description |
S-Band 2700-3100 MHz; P(out) (W): 20; P(in) (W): 3; Gain (dB): 8.2; Vcc (V): 36; Pulse Width (µsec): 100; Duty Cycle (%): 10; case style: 55CR S BAND, Si, NPN, RF POWER TRANSISTOR
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File Size |
59.19K /
3 Page |
View
it Online |
Download Datasheet
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Price and Availability
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