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  commutating Datasheet PDF File

For commutating Found Datasheets File :: 2380    Search Time::3.829ms    
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    Vishay Intertechnology, Inc.
Renesas Electronics Corporation
Part No. BCR12PM-14LA-A8 BCR12PM-14LA-15
OCR Text ...ical-rate of rise of off-state commutating voltage note4 (dv/dt)c 10 ? ? v/ ? s tj = 125 ?c notes: 2. measurement usi ng the gate trigger characteristics measurement circuit. 3. the contact thermal resistance r th (c-f) in case...
Description 700 V, 12 A, TRIAC, TO-220AB TO-220F, 3 PIN
Triac Medium Power Use

File Size 92.79K  /  8 Page

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    Vishay Intertechnology, Inc.
Part No. BCR10PM-12LA-A8
OCR Text ...ical-rate of rise of off-state commutating voltage note4 (dv/dt)c 10 ? ? v/ s tj = 125 c notes: 2. measurement usi ng the gate trigger characteristics measurement circuit. 3. the contact thermal resistance r th (c-f) in case o...
Description 600 V, 10 A, TRIAC, TO-220AB TO-220F, 3 PIN

File Size 118.21K  /  8 Page

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    MMFT2N02EL-D

ON Semiconductor
Part No. MMFT2N02EL-D
OCR Text ... circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. the device is housed in the sot223 package which is designed for medium power surface mo...
Description Power MOSFET 2 Amps, 20 Volts N-Channel SOT-223

File Size 115.39K  /  12 Page

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    MMFT2955ET1 MMFT2955ET1G

ON Semiconductor
Part No. MMFT2955ET1 MMFT2955ET1G
OCR Text ... circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. the device is housed in the sot ? 223 package which is designed for medium power surfac...
Description 1200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA CASE 318E-04, 4 PIN
1200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA LEAD FREE, CASE 318E-04, 4 PIN

File Size 200.72K  /  6 Page

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    BCR10PM-12LB-A8

Lattice Semiconductor, Corp.
Renesas Electronics Corporation
Part No. BCR10PM-12LB-A8
OCR Text ...ical-rate of rise of off-state commutating voltage note4 (dv/dt)c 10/1 ? ? v/ ? s tj = 125 ?c/150 ?c notes: 2. measurement usi ng the gate trigger characteristics measurement circuit. 3. the contact thermal resistance r th (c-f)...
Description 600 V, 10 A, TRIAC, TO-220AB TO-220FN, 3 PIN
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150?C)

File Size 101.68K  /  8 Page

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    BCR3PM-12LB-A8

Lattice Semiconductor, Corp.
Renesas Electronics Corporation
Part No. BCR3PM-12LB-A8
OCR Text ...ical-rate of rise of off-state commutating voltage note4 (dv/dt)c 5/1 ? ? v/ ? s tj = 125 ?c/150 ?c notes: 2. measurement usi ng the gate trigger characteristics measurement circuit. 3. the contact thermal resistance r th (c-f) ...
Description 600 V, 3 A, TRIAC, TO-220AB TO-220F, 3 PIN
Triac Low Power Use (The product guaranteed maximum junction temperature of 150?C)

File Size 101.88K  /  8 Page

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    BCR16PM-12LB-A8 BCR16PM-12LB-15

Lattice Semiconductor, Corp.
Renesas Electronics Corporation
Part No. BCR16PM-12LB-A8 BCR16PM-12LB-15
OCR Text ...ical-rate of rise of off-state commutating voltage note4 (dv/dt)c 10/1 ? ? v/ ? s tj = 125 ?c/150 ?c notes: 2. measurement usi ng the gate trigger characteristics measurement circuit. 3. the contact thermal resistance r th (c-f)...
Description 600 V, 16 A, TRIAC, TO-220AB TO-220F, 3 PIN
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150?C)
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150?C)

File Size 99.08K  /  8 Page

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    Lattice Semiconductor, Corp.
Renesas Electronics Corporation
Part No. BCR12PM-12LB-A8 BCR12PM-12LB-15
OCR Text ...ical-rate of rise of off-state commutating voltage note4 (dv/dt)c 10/1 ? ? v/ ? s tj = 125 ?c/150 ?c notes: 2. measurement usi ng the gate trigger characteristics measurement circuit. 3. the contact thermal resistance r th (c-f)...
Description 600 V, 12 A, TRIAC, TO-220AB TO-220F, 3 PIN
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150?C)

File Size 102.44K  /  8 Page

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    MAC8S-D

ON Semiconductor
Part No. MAC8S-D
OCR Text .../ s minimum at 110 c ? high commutating di/dt e 8.0 a/ms minimum at 110 c ? minimum and maximum values of i gt , v gt and i h specified for ease of design ? on-state current rating of 8 amperes rms at 70 c ? high surge current cap...
Description Sensitive Gate Triacs Silicon Bidirectional Thyristors

File Size 166.42K  /  8 Page

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    BCR3KM-14 BCR3

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. BCR3KM-14 BCR3
OCR Text ...tical-rate of rise of off-state commutating voltage @ # Tj=25C, VD=6V, RL=6, RG=330 Tj=125C, VD=1/2VDRM Junction to case V3 V2. The critical-rate of rise of the off-state commutating voltage is shown in the table below. V3. The con...
Description LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

File Size 26.76K  /  2 Page

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For commutating Found Datasheets File :: 2380    Search Time::3.829ms    
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