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fast time - to - trip access e Datasheet PDF File

For fast time - to - trip access e Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |

				eTC[eTC] List of Unclassifed Manufacturers electronic Theatre Controls, Inc.
Part No.	HC26 HC38 HC35 HC79R2J224K HC26R2A103K HC26R2A123K HC26R2A472K HC26R2A562K HC26R2A682K HC26R2A822K HC26R2e332K HC26R2e472K HC26R2e562K HC26R2e682K HC26R2e822K HC35R2A153K HC35R2A183K HC35R2A223K HC35R2A273K HC35R2e103K HC35R2e123K HC35R2J222K HC38R2A333K HC38R2A473K HC38R2A563K HC38R2A683K HC38R2e153K HC38R2e183K HC38R2e223K HC38R2e333K HC38R2e473K HC38R2J103K HC38R2J123K HC38R2J153K HC38R2J222K HC38R2J332K HC38R2J382K HC38R2J472K HC38R2J562K HC38R2J822K HC47R2A104K HC47R2A124K HC47R2A154K HC47R2A184K HC47R2A823K HC47R2e104K HC47R2e563K HC47R2e683K HC47R2e823K HC47R2J183K HC47R2J223K HC47R2J273K HC47R2J333K HC47R2J473K HC47R2XX HC69 HC69R2A224K HC69R2A274K HC69R2A334K HC69R2A474K HC69R2A564K HC69R2A824K HC69R2e124K HC69R2e154K HC69R2e184K HC69R2e224K HC69R2e334K HC69R2J104K HC69R2J124K HC69R2J563K HC69R2J683K HC69R2J823K HC79 HC79R2J154K HC79R2J184K HC47
Description	NTe IC, POWeR: 6 W, PACKAGe: 10 PIN SIP SRAM Memory IC; Memory Type:MOS SRAM; Interface Type:Serial; access time, Tacc:300ns; Package/Case:22-DIP; Mounting Type:Through Hole Voltage Regulator IC; Output Current:100mA; Output Voltage:9V; Package/Case:3-to-92; Voltage Regulator Type:Positive Voltage; Mounting Type:Through DIODe ZeNeR 150MW 33V 0603 ReCT fast ReC 400V 8A to-220A 高压多层陶瓷电容 Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:200V; Forward Current Avg Rectified, IF(AV):250mA; Forward Voltage Max, VF:1.25V; Vf Test Current:200mA; Reverse Recovery time, trr:50ns; Power Dissipation, Pd:400mW 高压多层陶瓷电容 MeDIUM/HIGH VOLTAGe MULTILAYeR CeRAMIC CAPACItoRS 高压多层陶瓷电容 ReCT fast ReC 600V 8A to-220A 高压多层陶瓷电容 ReCTIFIeR BRIDGe 10A 100V 170A-ifsm 1.05V-vf 10uA-ir GBJ 15/TUBe 高压多层陶瓷电容
File Size	36.79K / 1 Page	View it Online	Download Datasheet

				eXAR[exar Corporation]
Part No.	ST16C450 ST16C450CJ44 ST16C450CP40 ST16C450CQ48 ST16C450IJ44 ST16C450IP40 ST16C450IQ48 ST16C450BCJ44 16C450
Description	UNIVeRSAL ASYNCHRONOUS ReCeIVeR/TRANSMITTeR (UART) UART with Higher Operating Speed and Lower access time
File Size	180.28K / 28 Page	View it Online	Download Datasheet

				Aeroflex Circuit Technology
Part No.	5962F9687301QXA 5962F9687301QXX 5962F9687301QYA 5962F9687301QYC 5962F9687301QYX 5962F9687302QXA 5962F9687302QXC 5962F9687302QXX 5962F9687302QYA 5962F9687302QYC 5962F9687302QYX 5962F9687302VXA 5962F9687302VXC 5962F9687302VXX 5962F9687302VYA 5962F9687302VYC 5962F9687302VYX 5962G9687302QXA 5962G9687302QXC 5962F9687301VXC 5962G9687301QXC 5962F9687301VXX 5962G9687301QYC 5962G9687301QYA 5962G9687301VXX 5962G9687301VXA
Description	Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish solder. total dose 3e5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish optional. total dose 3e5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish gold. total dose 3e5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish solder. total dose 3e5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish gold. total dose 3e5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish optional. total dose 3e5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish solder. total dose 3e5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish gold. total dose 3e5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish optional. total dose 3e5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish solder. total dose 5e5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish gold. total dose 5e5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish gold. total dose 3e5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish gold. total dose 5e5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish optional. total dose 3e5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish solder. total dose 5e5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish optional. total dose 5e5rads(Si) Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish solder. total dose 5e5rads(Si)
File Size	84.93K / 10 Page	View it Online	Download Datasheet

				Cypress
Part No.	CY7C1339A CY7C1339A-100AC CY7C1339A-66AC
Description	fast access times: 4.8, 5, 6, and 7ns
File Size	55.72K / 13 Page	View it Online	Download Datasheet

				ALLeGRO[Allegro MicroSystems] AllegroMicroSystems Allegro MicroSystems, Inc.
Part No.	ULQ2436M 2436
Description	COUNTDOWN POWeR timeR COUNTDOWNPOWeRtimeR Flash - NOR IC; Memory Type:Flash; access time, Tacc:100ns; Page/Burst Read access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:256MB; NOR Flash Type:Page Mode access RoHS Compliant: Yes Audio Sample Rate Converter IC; IC Function:Audio Sample Rate Converter IC; Package/Case:28-SOIC; Leaded Process Compatible:No; No. of Channels:2; Operating Temp. Max:85 C; Operating Temp. Min:-40 C RoHS Compliant: Yes 的CountDown电源定时
File Size	78.28K / 3 Page	View it Online	Download Datasheet

				TelCom Semiconductor, I... TeLCOM[TelCom Semiconductor, Inc] TelCom Semiconductor, Inc.
Part No.	TC624eOA TC622VAT TC622VPA TC624CPA TC622CPA TC622COA TC624VOA TC624VPA TC622 TC622eAT TC622eOA TC622ePA TC622VOA TC624 TC624COA TC624ePA
Description	LOW COST, SINGLe trip POINT TeMPeRATURe SeNSOR (TC622 / TC624) LOW COST SINGLe trip POINT TeMPeRATURe SeNSOR LOW COST, SINGLe trip POINT TeMPeRATURe SeNSOR 低成本，单跳变点温度传感
File Size	37.49K / 3 Page	View it Online	Download Datasheet

				Spansion, Inc. SPANSION LLC
Part No.	AM29F040B-120JF AM29F040B-90eD
Description	Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:512K x 8; Package/Case:32-PLCC; Supply Voltage Max:5.5V; access time, Tacc:120ns; Mounting Type:Surface Mount RoHS Compliant: Yes 512K X 8 FLASH 5V PROM, 120 ns, PQCC32 Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:512K x 8; Package/Case:32-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5.5V; access time, Tacc:90ns; Mounting Type:Surface Mount RoHS Compliant: Yes
File Size	564.73K / 36 Page	View it Online	Download Datasheet

				Seiko NPC Corporation
Part No.	CF5015 CF5015AL2 CF5015AL1-2 CF5015AL2-2
Description	Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; access time (ns): 55; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): 0 to 70; Package: FBGA (48) Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; access time (ns): 85; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): -40 to 85; Package: FBGA (48) Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; access time (ns): 70; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): 0 to 70; Package: FBGA (48) Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; access time (ns): 85; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): 0 to 70; Package: FBGA (48) Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; access time (ns): 70; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): -40 to 85; Package: FBGA (48) Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; access time (ns): 85; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): 0 to 70; Package: FBGA (48) Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; access time (ns): 70; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): 0 to 70; Package: FBGA (48) Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; access time (ns): 70; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): -40 to 85; Package: FBGA (48)
File Size	94.87K / 10 Page	View it Online	Download Datasheet

				IDT[Integrated Device Technology]
Part No.	IDT70824S_L IDT70824S45PFI IDT70824L IDT70824L20G IDT70824L20GB IDT70824L20GI IDT70824L20PF IDT70824L20PFB IDT70824L20PFI IDT70824L25G IDT70824L25GB IDT70824L25GI IDT70824L25PF IDT70824L25PFB IDT70824L25PFI IDT70824L35G IDT70824L35GB IDT70824L35GI IDT70824L35PF IDT70824L35PFB IDT70824L35PFI IDT70824L45G IDT70824L45GB IDT70824L45GI IDT70824L45PF IDT70824L45PFB IDT70824L45PFI IDT70824S IDT70824S20G IDT70824S20GB IDT70824S20GI IDT70824S20PF IDT70824S20PFB IDT70824S20PFI IDT70824S25G IDT70824S25GB IDT70824S25GI IDT70824S25PF IDT70824S25PFB IDT70824S25PFI IDT70824S35G IDT70824S35GB IDT70824S35GI IDT70824S35PF IDT70824S35PFB IDT70824S35PFI IDT70824S45G IDT70824S45GB IDT70824S45GI IDT70824S45PF IDT70824S45PFB IDT70824 IDT70824L20PF8 IDT70824L25PF8 IDT70824L25PFI8 IDT70824L35PF8 IDT70824S20PF8
Description	4K x 16 SARAMTM (Sequential access / Random access Memory) HIGH SPeeD 64K (4K X 16 BIT) SeQUeNTIAL access RANDOM access MeMORY (SARAM?) HIGH-SPeeD 4K X 16 SeQUeNTIAL access RANDOM access MeMORY (SARAM⑩)
File Size	202.81K / 21 Page	View it Online	Download Datasheet

				Panasonic Semiconductor Panasonic Corporation
Part No.	UN222X UNR2222 UNR2223 UNR2224 UNR2221
Description	Silicon NPN epitaxial planar type Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-PLCC; Supply Voltage Max:5.5V Flash Memory IC; access time, Tacc:120ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting Flash Memory IC; access time, Tacc:45ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting POT THUMBWHeeL 10K OHM LINeAR
File Size	141.04K / 6 Page	View it Online	Download Datasheet

For fast time - to - trip access e Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |

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