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  gaa Datasheet PDF File

For gaa Found Datasheets File :: 153    Search Time::0.985ms    
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    OPA9415EDD

KODENSHI KOREA CORP.
Part No. OPA9415EDD
OCR Text gaa s 1. material substrate gaas (n type) epitaxial layer gaala s (p/n type) 2. electrode n(cathode) side gold alloy p(anode) side gold alloy 3. electro-optical parameter s ymbo l min typ max unit condition characteristics forward voltag...
Description Infrared LED Chip

File Size 93.94K  /  1 Page

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    OPA9415

KODENSHI KOREA CORP.
Part No. OPA9415
OCR Text gaa s 1. material substrate gaas (n type) epitaxial layer gaala s (p/n type) 2. electrode n(cathode) side gold alloy p(anode) side gold alloy 3. electro-optical parameter s ymbo l min typ max unit condition characteristics forward voltag...
Description Infrared LED Chip

File Size 86.48K  /  1 Page

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    OPA9441F

KODENSHI KOREA CORP.
Part No. OPA9441F
OCR Text gaa s 1. material substrate gaas (n type) epitaxial layer gaala s (p/n type) 2. electrode n(cathode) side gold alloy p(anode) side gold alloy 3. electro-optical parameter s ymbo l min typ max unit condition characteristics forward voltag...
Description Infrared LED Chip

File Size 88.31K  /  1 Page

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    FYL-25A3SURC1B

Ningbo Foryard Optoelectronics Co., Ltd.
Part No. FYL-25A3SURC1B
OCR Text ...n aAsP/ lgaas aP pe P p GaP /gaa ak@7 eak@ peak s p 00nm 630/ @640 eak@ / Re d Red nm /Red 660nm/Super Red Wave Length(nm) Forward Current Vs Forward Voltage 50 Relative Luminous intensity vs Forward current 3.0 ...
Description LED LAMP

File Size 137.47K  /  3 Page

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    OPA9423AL

KODENSHI KOREA CORP.
Part No. OPA9423AL
OCR Text gaa s 1. material substrate gaas (n type) epitaxial layer gaas (p/n type) 2. electrode n(cathode) side gold alloy p(anode) side aluminum alloy 3. electro-optical parameter min typ max unit condition characteristics f orward voltag e 1.25...
Description Infrared LED Chip

File Size 87.86K  /  1 Page

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    FYL-8033NURC1A

Ningbo Foryard Optoelectronics Co., Ltd.
Part No. FYL-8033NURC1A
OCR Text ...n aAsP/ lgaas aP pe P p GaP /gaa ak@7 eak@ peak s p 00nm 630/ @640 eak@ / Re d Red nm /Red 660nm/Super Red Wave Length(nm) Forward Current Vs Forward Voltage 50 Relative Luminous intensity vs Forward current 3.0 ...
Description LED LAMP

File Size 143.78K  /  3 Page

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    TOSHIBA
Part No. 6N137
OCR Text gaa ? as ired & photo ic 6n137 degital logic isolation tele ? communication analog data equipment control the toshiba 6n137 consist of a high emitting diode and a one chip photo ic. this unit is 8 ? lead dip package. lstt...
Description Photocoupler gaal.As Ired & Photo IC

File Size 196.47K  /  8 Page

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    FYL-8013NURC1B

Ningbo Foryard Optoelectronics Co., Ltd.
Part No. FYL-8013NURC1B
OCR Text ...n aAsP/ lgaas aP pe P p GaP /gaa ak@7 eak@ peak s p 00nm 630/ @640 eak@ / Re d Red nm /Red 660nm/Super Red Wave Length(nm) Forward Current Vs Forward Voltage 50 Relative Luminous intensity vs Forward current 3.0 ...
Description LED LAMP

File Size 141.01K  /  4 Page

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    OPA9420AL

KODENSHI KOREA CORP.
Part No. OPA9420AL
OCR Text gaa s 1. material substrate gaas (n type) epitaxial layer gaas (p/n type) 2. electrode n(cathode) side gold alloy p(anode) side aluminum alloy 3. electro-optical parameter min typ max unit condition characteristics f orward voltag e 1.3 ...
Description Infrared LED Chip

File Size 87.67K  /  1 Page

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For gaa Found Datasheets File :: 153    Search Time::0.985ms    
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