| |
|
 |
TriQuint Semiconductor, Inc.
|
| Part No. |
TGA8622-SCC
|
| OCR Text |
...= vg1 = -0.5 v. for low noise, hfet and phemt material, v gs = vg1 = -0.25 v. for lnbecolc, use v gs = vg1 = -0.10 v. v p : pinch-off voltage; v gs for i ds = 0.5 ma/mm of gate width. v ds fixed at 2.0 v, v gs is swept to bring i d... |
| Description |
|
| File Size |
926.17K /
10 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
TriQuint Semiconductor,Inc.
TRIQUINT[TriQuint Semiconductor]
|
| Part No. |
TGF4124-EPU TGF4124
|
| OCR Text |
hfet
4124
* * * * *
0.5 um gate finger length Nominal Pout of 12 Watts at 2.3 GHz Nominal PAE of 51.5% at 2.3 GHz Nominal Gain of 10.8 dB at 2.3 GHz Die size 36.0 x 81.0 x 4.0 mils (0.914 x 2.057 x 0.102 mm)
TGF4124-EPU RF Perf... |
| Description |
24 mm Discrete hfet
|
| File Size |
153.35K /
9 Page |
View
it Online |
Download Datasheet |
| |
|
|
TriQuint Semiconductor, Inc.
TRIQUINT[TriQuint Semiconductor]
|
| Part No. |
TGF4240-EPU TGF4240
|
| OCR Text |
...
TGF4240-EPU
2.4mm Discrete hfet
q q q q q q
2400 m x 0.5 m Nominal Pout of 31.5 - dBm at 8.5 GHz Nominal Gain of 10 - dB at 8.5 GHz Nominal PAE of 56% at 8.5 GHz Suitable for high reliability applications 0,572 x 0,978 x 0,102 mm... |
| Description |
2.4mm Discrete hfet 2.4毫米离散异质结场效应晶体
|
| File Size |
93.53K /
1 Page |
View
it Online |
Download Datasheet |
| |
|
|
TRIQUINT[TriQuint Semiconductor]
|
| Part No. |
TGF4260 TGF4260-EPU
|
| OCR Text |
...
TGF4260-EPU
9.6mm Discrete hfet
q q q q q q
4260
9600 m x 0.5 m Nominal Pout of 37 - dBm at 6.0 GHz Nominal Gain of 9.5 - dB at 6.0 GHz Nominal PAE of 52 % at 6.0 GHz Suitable for high reliability applications 0,572 x 2,324 x ... |
| Description |
9.6mm Discrete hfet
|
| File Size |
89.75K /
1 Page |
View
it Online |
Download Datasheet |
| |
|
|
NXP Semiconductors N.V.
|
| Part No. |
CGY888C
|
| OCR Text |
...ction fiel d effect transistor (hfet) gaas mmic. 1.2 features and benefits ? high gain ? excellent linearity ? superior levels of esd protection ? extremely low noise ? excellent return loss properties ? gain compensation over temperature... |
| Description |
34 dB, 870 MHz GaAs push-pull forward amplifier CGY888C<SOT115J|<<<1<Always Pb-free,;
|
| File Size |
62.55K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
NXP Semiconductors N.V.
|
| Part No. |
CGD982HCI
|
| OCR Text |
...ction field effect transistor (hfet) gaas dies. 1.2 features and benefits |
| Description |
1 GHz, 22 dB gain GaAs high output power doubler CGD982HCI<SOT115J|<<<1<Always Pb-free,;
|
| File Size |
81.92K /
9 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
