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  high power p1db42 5dbm at 4 4g Datasheet PDF File

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    2SJ114

Hitachi Semiconductor
Part No. 2SJ114
Description high SPEED power SWITCHING, high FREQUENCY power AMPLIFIER

File Size 114.79K  /  3 Page

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    RFMD[RF Micro Devices]
Part No. TA0012
Description New high power, high Efficiency HBT GSM power Amplifier

File Size 73.22K  /  4 Page

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    FD1000FH-56

Mitsubishi Electric Semiconductor
Part No. FD1000FH-56
Description 1000 A, 2800 V, SILICON, RECTIFIER DIODE
high power, high FREQUENCY, PRESS PACK TYPE
high power/ high FREQUENCY/ PRESS PACK TYPE

File Size 40.35K  /  3 Page

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    HSMS-2700-BLK HSMS-2700-TR2 HSMS-2702-BLK HSMS-2702-TR2 HSMS-270B-BLK HSMS-2700 HSMS-2700-TR1 HSMS-2702 HSMS-2702-TR1 HS

Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
Part No. HSMS-2700-BLK HSMS-2700-TR2 HSMS-2702-BLK HSMS-2702-TR2 HSMS-270B-BLK HSMS-2700 HSMS-2700-TR1 HSMS-2702 HSMS-2702-TR1 HSMS-270B HSMS-270B-TR1 HSMS-270C HSMS-270C-BLK HSMS-270C-TR1 HSMS-270C-TR2 HSMS-270B-TR2
Description HSMS-270C · high power clipping/clamping diode
HSMS-270B · high power clipping/clamping diode
HSMS-2702 · high power clipping/clamping diode
HSMS-2700 · high power clipping/clamping diode
high Performance Schottky Diode for Transient Suppression

File Size 101.86K  /  8 Page

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    AWT6114

Anadigics Inc
ANADIGICS, Inc
Part No. AWT6114
Description The AWT6114 is a high power, high efficiency amplifier module for Korean Band PCS CDMA wireless handset applications.
power Amplifiers
KPCS CDMA 3.4V/28dBm Linear power Amplifier Module

File Size 121.68K  /  8 Page

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    NXP Semiconductors N.V.
Part No. CGD1046HI
Description 1 GHz, 27 dB gain GaAs high output power doubler 40 MHz - 1003 MHz RF/MICROWAVE NARROW BAND high power AMPLIFIER

File Size 78.51K  /  8 Page

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    Vicor, Corp.
VICOR[Vicor Corporation]
Part No. 08-130097-B 08-130097
Description Compant high-Insulation power Relay, Polarized, 10A 外形图式PFC MEGAPAC大功率(2.4KW
OUTLINE DRAWING PFC MEGAPAC high power (2.4KW)

File Size 122.13K  /  2 Page

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    CREE power
Part No. W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

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    APT1001RBLC APT1001RSLC APT1001

ADPOW[Advanced power Technology]
Advanced power Technology Ltd.
Part No. APT1001RBLC APT1001RSLC APT1001
Description power MOS VI 1000V 11A 1.000 Ohm
power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE high VOLTAGE power MOSFETS

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    2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC47261 2SC58241 2SC58661 2SC58761 2SD1383K1 2SD16641 2SD18981 2SD20981 2SD

UTC
ROHM[Rohm]
Part No. 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC47261 2SC58241 2SC58661 2SC58761 2SD1383K1 2SD16641 2SD18981 2SD20981 2SD2114K1 2SD26721 2SK20941 2SK25031 2SK25041 2SK27151 2SK30181 2SK30191 2SK30501 2SK35411 4N60-TA3-T 4N60-TF3-T 4N60L-TA3-T
Description -3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
high-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
high-voltage Amplifier Transistor (120V, 50mA)
high-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
high-gain Amplifier Transistor (32V , 0.3A)
Medium power Transistor (32V, 1A)
power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
high-current Gain Medium power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL power MOSFET

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