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  j s Datasheet PDF File

For j s Found Datasheets File :: 157921    Search Time::1.578ms    
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    ABRACON CORP
Part No. AsM-4.9152MHZ-s
OCR Text j - l e a d e d ? p l a s t i c m o l d e d ? s u r f a c e m o u n t c r y s t a l c l o c k o s c i l l a t o r s a s m a s m - f r e q u e n c y - t e m p e r a t u r e - f r e q u e n c y s t a b i l i t y - ...
Description CRYsTAL OsCILLATOR, CLOCK, 4.9152 MHz, HCMOs/TTL OUTPUT

File Size 525.54K  /  1 Page

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    PS21962-S

Mitsubishi Electric Semiconductor
Part No. Ps21962-s
OCR Text ... THERMAL REsIsTANCE symbol Rth(j-c)Q Rth(j-c)F Parameter junction to case thermal resistance (Note 3) Condition Inverter IGBT part (per 1/6...s s s s s mA switching times Collector-emitter cut-off current VCE = VCEs CONTROL (PROTE...
Description 600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion

File Size 88.77K  /  8 Page

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    SAMTEC INC
Part No. ERF8-013-01-s-D-RA ERF8-013-03-s-D-RA
OCR Text ...7 ref .062 1.00 ref .039 "h" "j" 6.12 .241 ref 0.35 .014 ref 0.80 .031 ref 2.50 .098 ref c c ref "c" detail 'b' scale 5 : 1 11.35 .447 "k" ref "a" ref 5.75 ref .226 (typ) 8.7 .34 erf8-xxx-01-d-ra c designed & dimensioned in millimeters ...
Description 26 CONTACT(s), FEMALE, RIGHT ANGLE BOARD sTACKING CONNECTOR, sURFACE MOUNT, sOCKET

File Size 333.09K  /  4 Page

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    SAMTEC INC
Part No. sEL-110-01-LTL-s
OCR Text ...m code: 55322 revision j direction of unreeling pocket not detailed 1 max detail 'a' scale 10 : 1 .000 (see note 3) c6 deta...s-tr shown) (see note 5) .008 0.19 .016 0.39 .014 0.36 62 .024 0.62 detail 'c' scale 20 : 1 plastic...
Description 10 CONTACT(s), MALE, RIGHT ANGLE sINGLE PART CARD EDGE CONN, sURFACE MOUNT

File Size 219.59K  /  2 Page

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    IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4BC30s-s IRG4BC30ss IRG4BC30s-sTRL IRG4BC30s-sTRR
OCR Text ...t ( A ) D uty c yc le: 50% T j = 125C T s ink = 90C G ate drive as s pecified P ow e r D is sip atio n = 21 W Cla m p vo ltag e: 80 % of rate d 30 s q u a re w a v e : 6 0% of rate d volta ge 20 I 10 Id e a l d io d e s ...
Description TRANsIsTOR | IGBT | N-CHAN | 600V V(BR)CEs | 18A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 18A条一(c)|63AB
INsULATED GATE BIPOLAR TRANsIsTOR standard speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度(VCEs和\u003d 600V电压的Vce(on)典\u003d.4V,@和VGE \u003d 15V的,集成电路\u003d 18A条)
INsULATED GATE BIPOLAR TRANsIsTOR standard speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A)
600V DC-1 kHz (standard) Discrete IGBT in a D2-Pak package

File Size 150.68K  /  9 Page

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    MWDM2L-15S-S MWDM2L-15P-S MWDM1L-15P-S MWDM2L-9P-S MWDM4L-9S-S MWDM1L-9S-S MWDM1L-21P-S MWDM1L-9P-S MWDM2L-9S-S MWDM4L-9

Glenair, Inc.
Part No. MWDM2L-15s-s MWDM2L-15P-s MWDM1L-15P-s MWDM2L-9P-s MWDM4L-9s-s MWDM1L-9s-s MWDM1L-21P-s MWDM1L-9P-s MWDM2L-9s-s MWDM4L-9P-s MWDM4L-21P-s MWDM1L-25P-s MWDM2L-21P-s MWDM5L-21P-s MWDM5L-25P-s MWDM5L-15P-s MWDM5L-9P-s MWDM5L-9s-s MWDM2L-9ssB MWDM1L-15s-s MWDM5L-15s-s MWDM1L-21s-s MWDM5L-21s-s MWDM4L-25P-s MWDM4L-25s-s MWDM4L-15s-s MWDM2L-21s-s MWDM4L-15P-s MWDM2L-25s-s MWDM2L-25P-s
OCR Text ...A. G F .110 (2.79) MAX j .093 .005 (2.36 0.13) H .200 (5.08) MAX DIMENsIONs A Max. In . Layout 9P 9s 15P 15s 21P 21s 25P 25s ...s.A. GLENAIR, INC. * 1211 AIR WAY * GLENDALE, CA 91201-2497 * 818-247-6000 * FAX 818-500-9912 ww...
Description Micro-D Metal shell MWDM solder Cup Connectors
MICRO 9 sKT sOLDER 9 CONTACT(s), FEMALE, D MICROMINIATURE CONNECTOR, sOLDER

File Size 161.98K  /  2 Page

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    ELM33413CA-S

ELM Technology Corporation
Part No. ELM33413CA-s
OCR Text ...50 -25 0 25 50 75 100 125 150 t j , junction temperature(c) r ds(on) , normalized drain-source on-resistance i d = -4a v gs = -4.5v on-resi...s , reverse drain current (a) v gs = 0v t a = 125 c 25 c -55 c v sd , body diode forward voltage(v)...
Description single P-channel MOsFET

File Size 421.09K  /  4 Page

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    PS21964-S

Mitsubishi Electric Semiconductor
Part No. Ps21964-s
OCR Text ... THERMAL REsIsTANCE symbol Rth(j-c)Q Rth(j-c)F Parameter junction to case thermal resistance (Note 3) Condition Inverter IGBT part (per 1/6...s s s s s mA switching times Collector-emitter cut-off current VCE = VCEs CONTROL (PROTE...
Description 600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion

File Size 88.83K  /  8 Page

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