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  k-die Datasheet PDF File

For k-die Found Datasheets File :: 19974    Search Time::3.625ms    
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    EDE1108AESE-6E-E EDE1116AESE-6E-E EDE1108AESE-6E-F EDE1116AESE-6E-F EDE1108AESE-8E-E EDE1116AESE-8E-E EDE1108AESE-8E-F E

Elpida Memory
Part No. EDE1108AESE-6E-E EDE1116AESE-6E-E EDE1108AESE-6E-F EDE1116AESE-6E-F EDE1108AESE-8E-E EDE1116AESE-8E-E EDE1108AESE-8E-F EDE1116AESE-8E-F EDE1108AESE EDE1116AESE
OCR Text ...0) Date Published January 2009 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2008-2009 EDE1108AESE, EDE1116AE...Die revision E Organization (words x bits) 128M x 8 64M x 16 E 128M x 8 64M x 16 8 Internal Banks 8 ...
Description 1G bits DDR2 SDRAM

File Size 760.58K  /  78 Page

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    EDJ1104BDSE-AE-F EDJ1108BDSE-AE-F EDJ1104BDSE-DJ-F EDJ1108BDSE-DJ-F EDJ1104BDSE-GL-F EDJ1108BDSE-GL-F EDJ1104BDSE-GN-F E

Elpida Memory
Part No. EDJ1104BDSE-AE-F EDJ1108BDSE-AE-F EDJ1104BDSE-DJ-F EDJ1108BDSE-DJ-F EDJ1104BDSE-GL-F EDJ1108BDSE-GL-F EDJ1104BDSE-GN-F EDJ1108BDSE-GN-F EDJ1108BDSE EDJ1104BDSE
OCR Text ... 5.0) Date Published July 2009 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2009 EDJ1104BDSE, EDJ1108BDSE O...Die revision D Organization (words x bits) 256M x 4 Internal banks 8 JEDEC speed bin (CL-tRCD-tRP) D...
Description 1G bits DDR3 SDRAM

File Size 1,835.08K  /  147 Page

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    LNK302P_G_D LNK302P/G/D LNK304P/G/D LNK305P/G/D LNK306P/G/D

FERYSTER Inductive Components Manufacturer
Part No. LNK302P_G_D LNK302P/G/D LNK304P/G/D LNK305P/G/D LNK306P/G/D
OCR Text ... implementation of a R1 13.0 k 1% R3 2.05 k 1% C3 10 F 35 V L1 1 mH 280 mA D1 UF4005 RF1 8.2 2W D3 1N4007 D4 1N4007 L2 1 mH FB D BP S C1 100 nF D2 1N4005GP 12 V, 120 mA C2 100 F 16 V R4 3.3 k RTN 85-265 VAC C4 4....
Description Lowest Component Count, Energy-Effi cient Off-Line Switcher IC

File Size 762.63K  /  20 Page

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    MPXV5010 MPXV5010G MPXV5010G6U MPXV5010GC6T1 MPXV5010GC6U MPXV5010GC7U MPVZ5010 MPX501009 MPX5010GS MPX5010 MPX5010GSX M

Freescale Semiconductor...
Freescale Semiconductor, Inc
Part No. MPXV5010 MPXV5010G MPXV5010G6U MPXV5010GC6T1 MPXV5010GC6U MPXV5010GC7U MPVZ5010 MPX501009 MPX5010GS MPX5010 MPX5010GSX MPX5010DP MPVZ5010G7U MPVZ5010G6T1 MZ5010GW
OCR Text ...1 IDENTIFIER SEATING PLANE J K M DIM A B C D G H J K M N S CASE 482-01 ISSUE O SMALL OUTLINE PACKAGE -A- 4 5 D 8 PL 0.25 (0.010) M TB S A S N -B- G 8 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14....
Description    Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated

File Size 450.31K  /  23 Page

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    H5TQ1G63AFP H5TQ1G83AFP H5TQ1G43AFP H5TQ1G43AFPR-G7C H5TQ1G83AFPR-G7C

Hynix Semiconductor, Inc.
Part No. H5TQ1G63AFP H5TQ1G83AFP H5TQ1G43AFP H5TQ1G43AFPR-G7C H5TQ1G83AFPR-G7C
OCR Text ...ort balls) 1 A B C D E F G H J K L M N VSS VSS VDDQ VSSQ VREFDQ NC ODT NC VSS VDD VSS VDD VSS 1 2 VDD VSSQ DQ2 NC VDDQ VSS VDD CS BA0 A3 A5...Die Termination: ODT (registered HIGH) enables termination resistance internal to the DDR3 SDRAM. Wh...
Description 1Gb DDR3 SDRAM
256M X 4 DDR DRAM, 0.3 ns, PBGA78 HALOGEN FREE, FPBGA-78
128M X 8 DDR DRAM, 0.3 ns, PBGA78 HALOGEN FREE, FPBGA-78

File Size 938.61K  /  77 Page

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    SPLMY81X2

OSRAM GmbH
Part No. SPLMY81X2
OCR Text ...eit Unit W nm nm A W/A A V % nm/K deg deg % K/W Popt Ith P/ Iop Vop con /T || PTE Rth hxw - 0.001x10 - mm2 25C Werte beziehen sich auf die Standardbetriebsbedingung 35 W cw Ausgangsleistung, Warmesenkent...
Description Passively Cooled Diode Laser Bar, 35 W cw at 808 nm

File Size 119.96K  /  7 Page

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    SPLMY81S9

OSRAM GmbH
Part No. SPLMY81S9
OCR Text ...eit Unit W nm nm A W/A A V % nm/K deg deg % K/W Popt Ith P/ Iop Vop con /T || PTE Rth hxw - 0.001x10 - mm2 Werte beziehen sich auf die Standardbetriebsbedingung 140 W qcw Ausgangsleistung, 140s Pulsbreite...
Description Passively Cooled Diode Laser Bar, 140 W cw at 808 nm

File Size 119.02K  /  7 Page

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    SPLMY81G2

OSRAM GmbH
Part No. SPLMY81G2
OCR Text ...eit Unit W nm nm A W/A A V % nm/K deg deg % K/W Popt Ith P/ Iop Vop con /T || PTE Rth hxw - 0.001x10 - mm2 25C Werte beziehen sich auf die Standardbetriebsbedingung 45 W cw Ausgangsleistung, Warmesenkent...
Description Passively Cooled Diode Laser Bar, 45 W cw at 808 nm

File Size 121.21K  /  7 Page

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    SPLMN98X2

OSRAM GmbH
Part No. SPLMN98X2
OCR Text ...eit Unit W nm nm A W/A A V % nm/K deg deg % K/W Popt Ith P/ Iop Vop con /T || PTE Rth hxw - 0.001x10 - mm2 25C Werte beziehen sich auf die Standardbetriebsbedingung 40 W cw Ausgangsleistung, Warmesenkent...
Description Passively Cooled Diode Laser Bar, 40 W cw at 808 nm

File Size 119.93K  /  7 Page

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    SPLMN94X2

OSRAM GmbH
Part No. SPLMN94X2
OCR Text ...eit Unit W nm nm A W/A A V % nm/K deg deg % K/W Popt Ith P/ Iop Vop con /T || PTE Rth hxw - 0.001x10 - mm2 25C Werte beziehen sich auf die Standardbetriebsbedingung 40W cw Ausgangsleistung, Warmesenkente...
Description Passively Cooled Diode Laser Bar, 40 W cw at 940 nm

File Size 119.88K  /  7 Page

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