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low frequency power amplifer a Datasheet PDF File

For low frequency power amplifer a Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |

				Pulse Electronics, Corp. PULSE ELECTRONICS CORP Pulse a Technitrol Company Pulse a Technitrol Comp...
Part No.	DPC-24-1000B20 DPC-10-1000B3 DPC-10-440B2 DPC-16-75B9 DPC-20-220B14 DPC-28-360B51 DPC-24-35B57 DPC-120-35B38 DPC-28-40B49 DPC-16-640B11 DPC-16-55B55 DPC-34-300B23 DPC-28-30B58 DPC-24-450B19 DPC-24-180B18 DPC-56-15B61 DPC-34-125B22 DPC-40-20B60 DPC-56-420B32 DPC-28-800B52 DPC-40-30B25 DPC-34-700B24 DPC-10-90B53 DPC-34-35B21 DPC-40-110B26 DPC-10-2400B4 DPC-56-180B31 DPC-28-160B50 DPC-20-45B56 PC-120-10B37 PC-12-350B6 PC-12-2000B8 PC-10-120B1 PC-12-70B54 PC-12-100B5 DPC-40-600B28 DPC-40-250B27 DPC-12-350B6 DPC-34-25B59 PC-230-4B65 DPC-230-4B65 DPC-16-260B10 PC-230-5B45 DPC-230-5B45 48DPC-10-90B53
Description	power TRaNSFORMER, 24 Va power TRaNSFORMER, 10 Va power TRaNSFORMER, 4.4 Va power TRaNSFORMER, 1.2 Va power TRaNSFORMER, 1 Va low frequency, Open-Style Laminated Concentric Vertical Profile, PC Plug-In Series
File Size	104.12K / 1 Page	View it Online	Download Datasheet

				CREE power
Part No.	W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description	Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
File Size	273.34K / 17 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	FD1000FH-56
Description	1000 a, 2800 V, SILICON, RECTIFIER DIODE HIGH power, HIGH frequency, PRESS PaCK TYPE HIGH power/ HIGH frequency/ PRESS PaCK TYPE
File Size	40.35K / 3 Page	View it Online	Download Datasheet

				http:// KEC(Korea Electronics)
Part No.	KTa1298
Description	From old datasheet system EPITaXIaL PLaNaR PNP TRaNSISTOR (low frequency power aMPLIFIER, power SWITCHING) EPITaXIaL PLaNaR PNP TRaNSISTOR (low frequency power aMPLIFIER/ power SWITCHING)
File Size	245.96K / 2 Page	View it Online	Download Datasheet

				BOURNS INC
Part No.	SRU6025-100Y SRU6025-150Y SRU6025-151Y SRU6025-220Y SRU6025-221Y SRU6025-330Y SRU6025-4R7Y SRU6025-680Y
Description	CHOKE, power, SHIELDED, 10UH; Inductor type:Shielded power Choke; Inductance:10uH; Tolerance, inductance:30%; Resistance:57mR; frequency, resonant:25MHz; Case style:SMD Shielded; Q factor:8; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, power, SHIELDED, 15UH; Inductor type:Shielded power Choke; Inductance:15uH; Tolerance, inductance:30%; Resistance:86mR; frequency, resonant:22MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, power, SHIELDED, 150UH; Inductor type:Shielded power Choke; Inductance:150uH; Tolerance, inductance:30%; Resistance:770mR; frequency, resonant:5MHz; Case style:SMD Shielded; Q factor:30; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, power, SHIELDED, 22UH; Inductor type:Shielded power Choke; Inductance:22uH; Tolerance, inductance: /-30%; Resistance:130mR; frequency, resonant:18MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, power, SHIELDED, 220UH; Inductor type:Shielded power Choke; Inductance:220uH; Tolerance, inductance:30%; Resistance:1250mR; frequency, resonant:4MHz; Case style:SMD Shielded; Q factor:20; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, power, SHIELDED, 33UH; Inductor type:Shielded power Choke; Inductance:33uH; Tolerance, inductance:30%; Resistance:180mR; frequency, resonant:12MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, power, SHIELDED, 4.7UH; Inductor type:Shielded power Choke; Inductance:4.7uH; Tolerance, inductance: /-30%; Resistance:35mR; frequency, resonant:42MHz; Case style:SMD Shielded; Q factor:8; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, power, SHIELDED, 68UH; Inductor type:Shielded power Choke; Inductance:68uH; Tolerance, inductance: /-30%; Resistance:365mR; frequency, resonant:8MHz; Case style:SMD Shielded; Q factor:10; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
File Size	241.19K / 2 Page	View it Online	Download Datasheet

				Vishay
Part No.	SPW
Description	Special Purpose, High frequency Load (Tubes), High Stability and Excellent High frequency Characteristics, Particularly Suited for High frequency applications
File Size	93.45K / 2 Page	View it Online	Download Datasheet

				ROHM[Rohm] Rohm CO.,LTD.
Part No.	BU2618 BU2618FV a5801023
Description	audio LSIs > High frequency signal processing > PLL frequency synthesizer From old datasheet system PLL frequency synthesizer for tuners
File Size	136.16K / 8 Page	View it Online	Download Datasheet

				FaIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
Part No.	KSC945Y KSC945CG KSC945CL KSC945CO KSC945CR KSC945CY KSC945R KSC945 KSC945G KSC945L KSC945O KSC945CGTa KSC945CGBU KSC945YBU KSC945YTaNL KSC945CYTa KSC945GTa KSC945OBU KSC945CYTaNL
Description	NPN Epitaxial Silicon Transistor audio frequency amplifier & High frequency OSC. audio frequency amplifier & High frequency OSC.
File Size	40.23K / 4 Page	View it Online	Download Datasheet

				Sanyo Electric Co.,Ltd. SaNYO[Sanyo Semicon Device]
Part No.	2SB544 2SD400 2SD400E 2SD400D 2SD400F 2SB544G 2SB544E
Description	TRaNSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 1a I(C) \| TO-92VaR low-power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset TRaNSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 1a I(C) \| TO-92VaR low-frequency power amp, Electronic Governor applications low-frequency power amp Electronic Governor applications
File Size	444.90K / 5 Page	View it Online	Download Datasheet

				Bourns Inc.
Part No.	PM3700-80-RC PM3700-30-RC
Description	power Inductor; Series:PM3700; Inductance:750uH; Terminal Type:PCB Surface Mount; Current Rating:5.5a; frequency Max:20MHz; frequency Min:1MHz; Leaded Process Compatible:Yes; Mounting Type:Surface Mount; Packaging:Cut Tape
File Size	215.86K / 2 Page	View it Online	Download Datasheet

For low frequency power amplifer a Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |

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