... -- 3.0 -- 100 0.22 0.1 -- Unit mA mA V V/s V V mA C/ W C/ W m
Feb.1999
mITSUBISHI THYRISTOR mODULES
Tm130DZ/CZ/PZ-24,-2H
HIGH POW...PG(AV)= 3.0W
GATE VOLTAGE (V)
10 1 7 5 3 2
PGm=10W
0.20
0.15
10 0 7 5 IGT= 100mA 3...
....2 -- 3.0 -- 100 0.15 0.15 Unit mA mA V V/s V V mA C/ W C/ W
Feb.1999
mITSUBISHI THYRISTOR mODULES
Tm150SA-6
mEDIUm POWER GENERAL USE
NON-INSULATED TYPE
PERFORmANCE CURVES
mAXImUm ON-STATE CHARACTERISTIC
10 4 7 5 3 2 10 3 7 ...
...5 -- 2.0 -- 50 1.8 0.36 -- Unit mA mA V V/s V V mA C/ W C/ W m
Note: Items of the above table applies to the Thyristor part and the Diode...PG (AV)
VFGm
IFGm
Tj
Tstg
--
--
--
--
ELECTRICAL CHARACTERISTICS
Item Th...
...5 -- 3.0 -- 100 0.2 0.1 -- Unit mA mA V V/s V V mA C/ W C/ W m
Feb.1999
mITSUBISHI THYRISTOR mODULES
Tm200DZ/CZ/PZ-m,-H,-24,-2H
HI...PG(AV)= 3.0W
GATE VOLTAGE (V)
10 1 7 5 3 2
PGm=10W
TRANSIENT THERmAL ImPEDANCE (C/W)
...
Description
CONNECTOR ACCESSORY 连接器附 HIGH POWER GENERAL USE INSULATED TYPE 大功率常规使用绝缘型 314 A, 1600 V, SCR
Mitsubishi Electric Sem... Mitsubishi Electric, Corp. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Semicon...
...5 -- 3.0 -- 100 0.2 0.1 -- Unit mA mA V V/s V V mA C/ W C/ W m
Critical rate of rise of off-state voltage Tj=125C, VD=2/3VDRm Gate trigge...PG (AV)
VFGm
IFGm
Tj
Tstg
--
--
--
--
ELECTRICAL CHARACTERISTICS
Item Th...
Description
HIGH POWER GENERAL USE INSULATED TYPE 大功率常规使用绝缘型 8 Characters x 2 Lines, 5x7 Dot matrix Character and Cursor
...8 -- 3.0 -- 50 1.0 0.25 -- Unit mA mA V V/s V V mA C/ W C/ W m
Note: Items of the above table applies to the Thyristor part and the Diode...PG (AV)
VFGm
IFGm
Tj
Tstg
--
--
--
--
ELECTRICAL CHARACTERISTICS
Item Th...
...8 -- 3.0 -- 50 0.8 0.20 -- Unit mA mA V V/s V V mA C/ W C/ W m
Note: Items of the above table applies to the Thyristor part and the Diode...PG (AV)
VFGm
IFGm
Tj
Tstg
--
--
--
--
ELECTRICAL CHARACTERISTICS
Item Th...
Description
HIGH VOLTAGE mEDIUm POWER GENERAL USE INSULATED TYPE 高压中功率常规使用绝缘型