|
|
|
VISAY[Vishay Siliconix]
|
Part No. |
AN105
|
OCR Text |
...ge is increased (negatively for n-channel JFETs and positively for p-channel), the resistance will also increase. When the drain current is reduced to a point where the FET is no longer conductive, the maximum resistance is reached. The vol... |
Description |
FETS AS VOLTAGE-CONTROLLED RESISTORS
|
File Size |
84.31K /
7 Page |
View
it Online |
Download Datasheet |
|
|
|
MOTOROLA[Motorola, Inc]
|
Part No. |
AN211A
|
OCR Text |
...n this note.
DRAIN GATE SOURCE N CHANNEL JFET GATE SOURCE P CHANNEL JFET DRAIN
Freescale Semiconductor, Inc...
increase in channel resistance that prevents any further increase in drain current. The drain-source voltage that causes t... |
Description |
FIFELD EFFECT TRANSISTORS IN THEORY AND PRACTICE
|
File Size |
327.70K /
12 Page |
View
it Online |
Download Datasheet |
|
|
|
Analog Devices, Inc. AD[Analog Devices]
|
Part No. |
ADG839YKSZ-REEL7 ADG839 ADG839YKSZ-500RL7 ADG839YKSZ-REEL
|
OCR Text |
...us current at 3.3 V). Low THD + N (0.01% typ). Tiny SC70 package.
GENERAL DESCRIPTION
The ADG839 is a low voltage CMOS device containing...Channel On Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input... |
Description |
DIODE ZENER SINGLE 200mW 3.6Vz 20mA-Izt 0.05 15uA-Ir 1 SOD-323 3K/REEL 0.35 ohm CMOS 1.65 V to 3.6 V Single SPDT Switch/2:1 MUX
|
File Size |
255.78K /
16 Page |
View
it Online |
Download Datasheet |
|
|
|
Renesas
|
Part No. |
6AM11
|
OCR Text |
...d therein.
6am11 silicon n-channel/p-channel power mos fet array ade-208-1215 (z) 1st. edition mar. 2001 application high speed power switching features low on-resistance n-channel: r ds(on) 0.17 , v gs = 10 v, i d = 2.5 a ... |
Description |
Silicon n-channel/p-channel Power MOS Fet Array
|
File Size |
125.50K /
14 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|