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Motorola Mobility Holdings, Inc. Motorola Inc MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
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Part No. |
BC857BWT1 BC857AWT1 BC858BWT1 BC856BWT1 BC858AWT1 BC856AWT1 BC858CWT1
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Description |
CASE 419-02, STYLE 3 SOT-323/SC-70 100 mA, 45 V, PNP, Si, SMALL SIGNAL transistor CASE 419-02, STYLE 3 SOT-323/SC-70 100 mA, 30 V, PNP, Si, SMALL SIGNAL transistor CASE 419-02/ STYLE 3 SOT-323/SC-70 CASE 419-02 STYLE 3 SOT-323/SC-70
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File Size |
251.09K /
8 Page |
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Continental Device India Limited
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Part No. |
CFD2374 CFD2374Q CFB1548 CFB1548A CFB1548AP CFB1548AQ CFB1548P CFD2374A CFD2374AP CFD2374P CFD2374AQ
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Description |
2.000W Power npn Plastic Leaded transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548 2.000W Power npn Plastic Leaded transistor. 60V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548Q 2.000W Power PNP Plastic Leaded transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374 2.000W Power PNP Plastic Leaded transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374A 2.000W Power PNP Plastic Leaded transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374AP 2.000W Power PNP Plastic Leaded transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFD2374AQ 2.000W Power PNP Plastic Leaded transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374P 2.000W Power npn Plastic Leaded transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548A 2.000W Power npn Plastic Leaded transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548AP 2.000W Power npn Plastic Leaded transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548P 2.000W Power npn Plastic Leaded transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548AQ
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File Size |
147.25K /
3 Page |
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Continental Device India Limited
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Part No. |
CFB940 CFB940A CFB940AP CFB940AQ CFD1264AQ CFD1264Q CFB940Q CFD1264P CFB940P CFD1264AP
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Description |
2.000W Power PNP Plastic Leaded transistor. 150V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264 2.000W Power PNP Plastic Leaded transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264A 2.000W Power PNP Plastic Leaded transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264AP 2.000W Power PNP Plastic Leaded transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264AQ 2.000W Power npn Plastic Leaded transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940AQ 2.000W Power npn Plastic Leaded transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940Q 2.000W Power PNP Plastic Leaded transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264Q 2.000W Power npn Plastic Leaded transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940P 2.000W Power npn Plastic Leaded transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFB940A 2.000W Power PNP Plastic Leaded transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264P 2.000W Power npn Plastic Leaded transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940AP
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File Size |
146.53K /
3 Page |
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STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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Part No. |
24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR ST25C16B6TR ST25C16M1TR ST25C16M3TR ST25C16M5TR ST25C16M6TR ST24C16 ST24C16B1TR ST24C16B3TR ST24C16B5TR ST24C16B6TR ST24C16M1TR ST24C16M3TR ST24C16M5TR ST24C16M6TR ST24W16 ST24W16B1TR ST24W16B3TR ST24W16B5TR ST24W16B6TR ST24W16M1TR ST24W16M3TR ST24W16M5TR ST24W16M6TR ST25W16 ST25W16B1TR ST25W16B3TR ST25W16B5TR ST25W16B6TR ST25W16M1TR ST25W16M3TR ST25W16M5TR ST25W16M6TR
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Description |
MOSFET; transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护 MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; transistor type:MOSFET; transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds MOSFET; transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No MOSFET, DUAL, PP, POWERPAK; transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes (ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16/8/4/2/1KbitSerialICBusEEPROM
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File Size |
125.39K /
17 Page |
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MITSUMI ELECTRIC CO LTD ETC[ETC] Mitsumi Electronics, Corp.
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Part No. |
PST993 PST993C PST993D PST993E PST993F PST993G PST993H PST993I PST993J PST993K PST993L PST994 PST994C PST994D PST994E PST994F PST994G PST994H PST994I PST994J PST994K PST994L
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Description |
MOSFET; transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-2.2A; On-Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23; Leaded Process Compatible:No MOSFET, P, SOT-23; transistor type:MOSFET; Current, Id cont:2.2A; Resistance, Rds on:0.1R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:2.2A; Current, Idm pulse:10A; Marking, SMD:L1; Pins, No. RoHS Compliant: Yes MOSFET; transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2.1A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SOT-23; Leaded Process Compatible:No System Reset
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File Size |
93.95K /
4 Page |
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Continental Device India Limited
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Part No. |
CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB949P CFB949AR CFD1275Q
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Description |
2.000W Power PNP Plastic Leaded transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ 2.000W Power npn Plastic Leaded transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ 2.000W Power PNP Plastic Leaded transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP 2.000W Power npn Plastic Leaded transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP 2.000W Power npn Plastic Leaded transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R 2.000W Power PNP Plastic Leaded transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275 2.000W Power PNP Plastic Leaded transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P 2.000W Power PNP Plastic Leaded transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR 2.000W Power PNP Plastic Leaded transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A 2.000W Power npn Plastic Leaded transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949 2.000W Power npn Plastic Leaded transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
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File Size |
147.20K /
3 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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