Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W transistor polarity N Channel Current Id cont. 7.6 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V N-Channel Enhancement Mode Field Effect transistor
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W transistor polarity N Channel Current Id cont. 5.8 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V N-Channel Enhancement Mode Field Effect transistor
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W transistor polarity P Channel Current Id cont. 5.1 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V p-channel Enhancement Mode Field Effect transistor
N-Channel SIPmos Power transistor From old datasheet system SIPmos ? Power transistor SIPmos Power transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)
SIPmos Power transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance) From old datasheet system SIPmos ? Power transistor N-Channel SIPmos Power transistor
N-Channel SIPmos Power transistor From old datasheet system SIPmos ? Power transistor SIPmos Power transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated)