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  power-max Datasheet PDF File

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    IRF7458 IRF7458TR

IRF[International Rectifier]
Part No. IRF7458 IRF7458TR
Description 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=30V, Rds(on)max=8.0mohm, Id=14A)
Power MOSFET(Vdss=30V/ Rds(on)max=8.0mohm/ Id=14A)

File Size 118.32K  /  8 Page

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    Advanced Power Technolo...
ADPOW[Advanced Power Technology]
MICROSEMI POWER PRODUCTS GROUP
Part No. APT10045LLL APT10045B2LL APT10045B2LL_03 APT10045B2LL03 B2LLG
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOSFET; Package: T-MAX&#153; [B2]; ID (A): 23; RDS(on) (Ohms): 0.45; BVDSS (V): 1000;

File Size 90.08K  /  5 Page

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    MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
Advanced Power Technolo...
Part No. APT8020LLL APT8020B2LL APT8020B2LL_04 APT8020B2LL04 APT8020B2LLG
Description Power MOSFET; Package: T-MAX&#153; [B2]; ID (A): 38; RDS(on) (Ohms): 0.2; BVDSS (V): 800;
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 156.54K  /  5 Page

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    TA8251AH E008170

TOSHIBA[Toshiba Semiconductor]
Part No. TA8251AH E008170
Description From old datasheet system
MAX POWER 30W BTL x 4CH AUDIO POWER IC

File Size 555.70K  /  12 Page

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    TA8255AH E008171

TOSHIBA[Toshiba Semiconductor]
Part No. TA8255AH E008171
Description From old datasheet system
MAX POWER 22W BTL x 4CH AUDIO POWER IC

File Size 548.45K  /  12 Page

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    Toshiba
Part No. TC8260AH EA09560
Description MAX POWER 43 W BIT x 4CH AUDIO POWER IC
From old datasheet system

File Size 555.28K  /  13 Page

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    Toshiba
Part No. TA8259H EA09472
Description MAX POWER 43 W BIT x 4CH AUDIO POWER IC
From old datasheet system

File Size 527.12K  /  13 Page

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    74AHCT259D 74AHC259D 74AHC259PW 74AHCT259PW HCT259

NXP Semiconductors N.V.
Part No. 74AHCT259D 74AHC259D 74AHC259PW 74AHCT259PW HCT259
Description Zener Diode; Zener Voltage Typ, Vz:2.7V; Vz Test Current, Izt:20mA; Power Dissipation, Pd:500mW; Package/Case:DO-35; Breakdown Voltage Max:2.7V; Forward Current:200A; Leakage Current Max:100uA; Mounting Type:Through Hole 8位可寻址锁存
8-bit addressable latch

File Size 100.17K  /  20 Page

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    RJK0856DPB-15

Renesas Electronics Corporation
Part No. RJK0856DPB-15
Description 80V, 35A, 8.9m?max. Silicon N Channel Power MOS FET Power Switching

File Size 147.17K  /  7 Page

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    RJK0452DPB13 RJK0452DPB-00-J5

Renesas Electronics Corporation
Part No. RJK0452DPB13 RJK0452DPB-00-J5
Description 40V, 45A, 3.5m max. Silicon N Channel Power MOS FET Power Switching

File Size 101.38K  /  7 Page

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