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  qdr-i ddr-i qdr-ii ddr- Datasheet PDF File

For qdr-i ddr-i qdr-ii ddr- Found Datasheets File :: 274    Search Time::2.547ms    
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    CY7C12461KV18 CY7C12501KV18 CY7C12501KV18-400BZC CY7C12481KV18 CY7C12571KV18 CY7C12481KV18-400BZC

Cypress Semiconductor
Part No. CY7C12461KV18 CY7C12501KV18 CY7C12501KV18-400BZC CY7C12481KV18 CY7C12571KV18 CY7C12481KV18-400BZC
OCR Text ... 1M x 36 Note 1. The Cypress QDR II+ devices surpass the QDR consortium specification and can support VDDQ = 1.4V to VDD. Cypress Semiconductor Corporation Document Number: 001-53194 Rev. *I * 198 Champion Court * San Jose...
Description 36-Mbit DDR II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)

File Size 608.41K  /  29 Page

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    CY7C1410V18 CY7C1410V18-167BZC CY7C1410V18-200BZC CY7C1410V18-250BZC CY7C1414V18-250BZC CY7C1425V18 CY7C1425V18-200BZC

CYPRESS SEMICONDUCTOR CORP
Part No. CY7C1410V18 CY7C1410V18-167BZC CY7C1410V18-200BZC CY7C1410V18-250BZC CY7C1414V18-250BZC CY7C1425V18 CY7C1425V18-200BZC
OCR Text qdr-iITM SRAM 2-Word Burst Architecture Features * Separate Independent Read and Write data ports -- Supports concurrent transactions * 20...I/O VDDQ = 1.4V to VDD * 15 x 17 x 1.4 mm 1.0-mm pitch FBGA package, 165-ball (11 x 15 matrix) * Var...
Description 4M X 8 QDR SRAM, 0.45 ns, PBGA165
36-Mbit qdr-iI SRAM 2-Word Burst Architecture
36-Mbit qdr-iI?/a> SRAM 2-Word Burst Architecture
36-Mbit qdr-iI?SRAM 2-Word Burst Architecture

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    CY7C1413BV18 CY7C1413BV18-200BZI CY7C1413BV18-167BZC CY7C1413BV18-167BZXC CY7C1413BV18-200BZC CY7C1413BV18-200BZXC CY7C1

Cypress Semiconductor
Part No. CY7C1413BV18 CY7C1413BV18-200BZI CY7C1413BV18-167BZC CY7C1413BV18-167BZXC CY7C1413BV18-200BZC CY7C1413BV18-200BZXC CY7C1413BV18-167BZI CY7C1413BV18-167BZXI CY7C1413BV18-200BZXI CY7C1413BV18-278BZXI CY7C1411BV18-278BZXI CY7C1411BV18-278BZC CY7C1413BV18-278BZC CY7C1411BV18-167BZI CY7C1411BV18-200BZC CY7C1411BV18-200BZXC CY7C1411BV18-200BZXI CY7C1411BV18-167BZXI CY7C1411BV18-200BZI CY7C1411BV18-167BZC CY7C1411BV18-167BZXC
OCR Text ...us internally self-timed writes qdr-iI operates with 1.5 cycle read latency when DLL is enabled Operates as a qdr-i device with 1 cycle read latency in DLL off mode Available in x 8, x 9, x 18, and x 36 configurations Full data coherency, p...
Description 36-Mbit qdr-iI SRAM 4-Word Burst Architecture

File Size 452.16K  /  30 Page

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    CY7C1314BV18 CY7C1312BV18

Cypress Semiconductor
Part No. CY7C1314BV18 CY7C1312BV18
OCR Text QDR(R) II SRAM Two-Word Burst Architecture 18-Mbit QDR(R) II SRAM Two-Word Burst Architecture Features Functional Description The ...I/O devices. Access to each port is accomplished through a common address bus. The read address is l...
Description 18-Mbit QDR庐 II SRAM Two-Word Burst Architecture
18-Mbit QDR? II SRAM Two-Word Burst Architecture

File Size 916.84K  /  29 Page

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    K7R643682M07 K7R640982M K7R643682M-FI160 K7R643682M-EC160 K7R643682M-FC160 K7R643682M-EC250 K7R643682M-FI250 K7R643682M-

Samsung semiconductor
Part No. K7R643682M07 K7R640982M K7R643682M-FI160 K7R643682M-EC160 K7R643682M-FC160 K7R643682M-EC250 K7R643682M-FI250 K7R643682M-FC20T
OCR Text ...ustments of depth and width. QDR SRAM and Quad Data Rate comprise a new family of products developed by Cypress, Renesas, IDT, NEC and Sa...i.e. 10A for 144Mb and 2A for 288Mb. 2. BW0 controls write to D0:D8, BW1 controls write to D9:D17, B...
Description 2Mx36 & 4Mx18 & 8Mx9 QDR II b2 SRAM
2M X 36 QDR SRAM, 0.5 ns, PBGA165
2M X 36 QDR SRAM, 0.45 ns, PBGA165

File Size 457.02K  /  20 Page

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    K7R643684M07 K7R641884M K7R641884M-FC200 K7R641884M-FI250

Samsung semiconductor
Part No. K7R643684M07 K7R641884M K7R641884M-FC200 K7R641884M-FI250
OCR Text ...s in ( ) are for x18 device. QDR SRAM and Quad Data Rate comprise a new family of products developed by Cypress, Renesas, IDT, NEC and Sa...i.e. 10A for 144Mb and 2A for 288Mb. 2. BW0 controls write to D0:D8, BW1 controls write to D9:D17, B...
Description 2Mx36 & 4Mx18 QDR II b4 SRAM
4M X 18 QDR SRAM, 0.45 ns, PBGA165

File Size 446.19K  /  19 Page

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    K7S3236T4C08 K7S3218T4C

Samsung semiconductor
Part No. K7S3236T4C08 K7S3218T4C
OCR Text ...rs in ( ) are for x18 device QDR SRAM and Quad Data Rate comprise a new family of products developed by Cypress, Renesas, IDT, NEC and Samsung technology. -3- Rev. 1.3 August 2008 K7S3236T4C K7S3218T4C 1 A B C D E F G H J K L ...
Description 1Mx36 & 2Mx18 QDR II b4 SRAM

File Size 440.83K  /  20 Page

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    MT54W4MH9B-4 MT54W4MH9B-5 MT54W4MH9B-6 MT54W4MH9B-7.5 MT54W4MH9BF-4 MT54W4MH9BF-5 MT54W4MH9BF-6 MT54W4MH9BF-7.5 MT54W1MH

Micron Technology
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Part No. MT54W4MH9B-4 MT54W4MH9B-5 MT54W4MH9B-6 MT54W4MH9B-7.5 MT54W4MH9BF-4 MT54W4MH9BF-5 MT54W4MH9BF-6 MT54W4MH9BF-7.5 MT54W1MH36B-7.5 MT54W4MH8B-7.5 MT54W2MH18B-7.5 MT54W1MH36BF-7.5 MT54W2MH18BF-7.5 MT54W4MH8BF-7.5 MT54W4MH8BF-5 MT54W4MH8BF-4 MT54W4MH8BF-6 MT54W2MH18BF-4 MT54W2MH18BF-6 MT54W2MH18BF-5 MT54W2MH18B-6 MT54W2MH18B-5
OCR Text ...n advanced 6T CMOS process. The QDR architecture consists of two separate DDR (double data rate) ports to access the memory array. The read ...I/O levels to shift data during this testing mode of operation. The SRAM operates from a +1.8V power...
Description 36Mb QDR?II SRAM 2-WORD BURST

File Size 303.63K  /  27 Page

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    CY7C11651KV18 CY7C11651KV18-400BZXC CY7C11611KV18 CY7C11631KV18 CY7C11761KV18

Cypress Semiconductor
Part No. CY7C11651KV18 CY7C11651KV18-400BZXC CY7C11611KV18 CY7C11631KV18 CY7C11761KV18
OCR Text QDR II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18-Mbit QDR(R) II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) ...I/O devices. Each port is accessed through a common address bus. Addresses for read and write are la...
Description 18-Mbit QDR? II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)

File Size 621.38K  /  29 Page

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    CY7C1165KV18 CY7C1165KV18-400BZC CY7C1165KV18-400BZXC CY7C1165KV18-550BZC CY7C1165KV18-550BZXC CY7C1163KV18-550BZC CY7C1

Cypress Semiconductor
Part No. CY7C1165KV18 CY7C1165KV18-400BZC CY7C1165KV18-400BZXC CY7C1165KV18-550BZC CY7C1165KV18-550BZXC CY7C1163KV18-550BZC CY7C1161KV18 CY7C1163KV18-400BZI CY7C1163KV18-450BZC CY7C1176KV18
OCR Text QDR(R) II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) Features Configurations With Read Cycle Latency of 2.5 cycles: ...I device with one cycle read latency when DOFF is asserted LOW Available in x8, x9, x18, and x36 con...
Description 18-Mbit QDR? II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)

File Size 591.12K  /  29 Page

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For qdr-i ddr-i qdr-ii ddr- Found Datasheets File :: 274    Search Time::2.547ms    
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