rg-122 u pdf Datasheet P11 Full Text Search --- IC-ON-LINE


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rg-122 u Datasheet PDF File

For rg-122 u Found Datasheets File :: 625 Search Time::4.875ms
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				ADPOW[Advanced Power Technology]
Part No.	APT20M16B2FLL APT20M16LFLL
OCR Text	...ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX uNIT Amps Volts V/ns ns 100 400 1.3 8 230 450 ...122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) Drain 25.48 (1....
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	59.15K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT20M16B2LL APT20M16LLL
OCR Text	...AN OR DV NF A I VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX uNIT Amps Volts ns C 100 400 1.3 ...122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) Drain 25.48 (1....
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	57.64K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT6017B2FLL APT6017LFLL
OCR Text	...ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX uNIT Amps Volts V/ns ns 35 140 1.3 15 250 515 ...122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) Drain 25.48 (1....
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.07K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFIB7N50A IRFIB7N50APBF
OCR Text	... VDD = 250V --- ID = 11A ns --- RG = 9.1 --- R D = 22,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS...122 ) -B 1 3.70 (.540) 1 3.50 (.530) C D A 3X 1.4 0 (.05 5) 1.0 5 (.04 2) 3X 0.9 0 (.035 ) 0.7 0 ...
Description	6.6 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=6.6A) HEXFET? Power MOSFET 500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
File Size	94.72K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4IBC20W
OCR Text	...5A, VCC = 480V 64 96 VGE = 15V, RG = 50 0.06 -- Energy losses include "tail" 0.08 -- mJ See Fig. 9, 10, 14 0.14 0.2 21 -- TJ = 150C, 15 -- I...122 ) -B1 3.7 0 (.54 0) 1 3.5 0 (.53 0) C D A 1 .4 0 (.0 55) 3X 1 .0 5 (.0 42) 2.5 4 (.10 0 ) 2X ...
Description	600V Warp 60-150 kHz Discrete IGBT in a TO-220 FullPak package INSuLATED GATE BIPOLAR TRANSISTOR
File Size	152.11K / 8 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXFK150N15 IXFX150N15
OCR Text	... 100 A/ms, VDD VDSS TJ 150C, RG = 2 W TC = 25C IXFK 150N15 IXFX 150N15 VDSS ID25 RDS(on) = 150 V = 150 A = 12.5 mW trr 250 ...122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 ...
Description	HiPerFET Power MOSFETs
File Size	46.98K / 2 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXFK34N80 IXFX34N80
OCR Text	... 100 A/ms, VDD VDSS TJ 150C, RG = 2 W TC = 25C IXFK 34N80 IXFX 34N80 VDSS ID25 RDS(on) = 800 V = 34 A = 0.24 W trr 250 ns ...122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 ...
Description	HiPerFET Power MOSFETs
File Size	47.08K / 2 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation] IXYS, Corp.
Part No.	IXFK90N20Q IXFH90N20Q IXFX90N20Q
OCR Text	...t 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C IXFX 90N20Q IXFK 90N20Q VDSS ID25 RDS(on) = = = 200 V 90 A 22 m trr 200 s...122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 ...
Description	HiPerFETTM Power MOSFETs Q-CLASS HiPerFETTM Power MOSFETs Q-CLASS 90 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
File Size	99.06K / 2 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MGW20N120_D ON1922 MGW20N120
OCR Text	...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...122 29 -- -- -- pF VCE(on) -- -- -- VGE(th) 4.0 -- gfe -- 6.0 10 12 8.0 -- -- 2.42 2.36 2.90 3.54 --...
Description	Insulated Gate Bipolar Transistor From old datasheet system IGBT IN TO-47 20 A @ 90 28 A @ 25 1200 VOLTS
File Size	135.63K / 5 Page	View it Online	Download Datasheet

				ON Semi
Part No.	MGW20N60D_D ON1924
OCR Text	...60 Vdc, VGE = 15 Vdc, TJ = 25C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Case - Diode -- Junction to Ambient S...122 0.133 0.138 0.145 0.130 0.150 0.209 BSC 0.120 0.134 L A R 1 2 3 K P -Y- F ...
Description	IGBT IN TO-47 20 A @ 90 32 A @ 25 600 VOLTS From old datasheet system
File Size	170.46K / 6 Page	View it Online	Download Datasheet

For rg-122 u Found Datasheets File :: 625 Search Time::4.875ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |