rg-161 u pdf Datasheet P11 Full Text Search --- IC-ON-LINE


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rg-161 u Datasheet PDF File

For rg-161 u Found Datasheets File :: 755 Search Time::2.063ms
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				IXYS[IXYS Corporation]
Part No.	IXFN150N10 IXFK100N10 IXFK150N10
OCR Text	... 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C Maximum Ratings IXFK IXFN 100 100 20 30 100 76 560 75 30 5 500 100 100 20 30 150 560 7...161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 ...
Description	Discrete MOSFETs: HiPerFET Power MOSFETS
File Size	114.74K / 4 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXFN150N15
OCR Text	... 100 A/ms, VDD VDSS T J 150C, RG = 2 W TC = 25C Maximum Ratings 150 150 20 30 150 100 600 150 60 3 5 600 -55 ... +150 150 -55 ... +150 ...161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 ...
Description	Discrete MOSFETs: HiPerFET Power MOSFETS
File Size	69.31K / 2 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation] IXYS, Corp.
Part No.	IXFH52N30Q IXFK52N30Q IXFT52N30Q
OCR Text	... 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q VDSS ID25 RDS(on) trr = 300 V = 52 A = 60 mW...161 Min. Recommended Footprint (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are...
Description	N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances From old datasheet system N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances 52 A, 300 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
File Size	69.16K / 2 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXSK30N60BD1 IXST30N60BD1 IXSH30N60BD1
OCR Text	...5C, 1 ms VGE = 15 V, TJ = 125C, RG = 10 W Clamped inductive load, VCL = 0.8 VCES VGE = 15 V, VCE = 360 V, TJ = 125C RG = 33 W, non repetitiv...161 Min. Recommended Footprint (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are...
Description	High Speed IGBT with Diode
File Size	117.17K / 5 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXSK30N60CD1 IXST30N60CD1 IXSH30N60CD1
OCR Text	...5C, 1 ms VGE = 15 V, TJ = 125C, RG = 10 W Clamped inductive load, VCL = 0.8 VCES VGE = 15 V, VCE = 360 V, TJ = 125C RG = 33 W, non repetitiv...161 Min. Recommended Footprint (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are...
Description	Short Circuit SOA Capability
File Size	71.36K / 2 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXFN80N50 IXFN75N50
OCR Text	... 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C 64 6 5 700 -55 ... +150 150 -55 ... +150 Either Source terminal of miniBLOC can be us...161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 ...
Description	(IXFN80N50 / IXFN75N50) HiPerFET Power MOSFETs Single Die MOSFET
File Size	125.53K / 4 Page	View it Online	Download Datasheet

				ETC
Part No.	SMOS44N50 SMOS48N50
OCR Text	...us; VDD VDSS' 5 150 C; RG=2 520 -55...+150 150 -55...+150 o PD TJ TJM Tstg TL VISOL TC=25oC W C 1.6mm(0.063 in.) from case for 10s 50/60Hz,RMS IISOL 1mA t=1 min t=1 s 2500 3000 1.5/13 1.5/13 30 o C V~ ...
Description	POWER MOSFETS
File Size	162.20K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology]
Part No.	APT1001R1AVR
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX uNIT 3050 280 135 150 16 70 12 11 55 12 3660 390 200 225 24 105 24 22 85 24 ns n...161) (2-Places) Gate Source 16.64 (.655) 17.15 (.675) 38.61 (1.52) 39.12 (1.54) 22.23 (.875)...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs POWER MOS V 1000V 9A 1.100 Ohm
File Size	68.21K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT10025JLC
OCR Text	... @ 25C VGS = 15V VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX uNIT Amps Volts ns C 34 136 1.3...161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378)...
Description	Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs POWER MOS VI 1000V 34A 0.250 Ohm
File Size	34.89K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT10025JVFR
OCR Text	... 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT pF 15000 1360 710 660 51 250 22 20 97 16 18000 1900 1065 990 75 375 44 40 14...161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378)...
Description	Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 34A 0.250 Ohm
File Size	73.43K / 4 Page	View it Online	Download Datasheet

For rg-161 u Found Datasheets File :: 755 Search Time::2.063ms
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