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ST Microelectronics
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Part No. |
STTA506B-TR
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OCR Text |
...ics conduction losses : p1 = v t0 . i f(av) + r d . i f 2 (rms) reverse losses : p2 = v r . i r . (1 - d ) application data (contd) ...204 0.212 c 0.45 0.60 0.017 0.023 c2 0.48 0.60 0.018 0.023 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.251... |
Description |
TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE
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File Size |
341.02K /
10 Page |
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IXYS, Corp.
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Part No. |
VWO85-12IO1
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OCR Text |
... = 85 a; t vj = 25c < 1.67 v v t0 for power-loss calculations only 0.85 v r t 11 m v gt v d = 6 v t vj = 25c < 1.5 v t vj = -40c < 1.6...204 k/w d s creeping distance on surface 12.7 mm d a creepage distance in air 9.4 mm a max. allowabl... |
Description |
42.39 A, 1200 V, SCR MODULE-12
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File Size |
73.88K /
2 Page |
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INTERSIL[Intersil Corporation]
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Part No. |
RHRP6120CC
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OCR Text |
...SENSE VDD
IL IV
IL
12V t0 t1 t2 t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS...204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 10... |
Description |
6A/ 1200V Hyperfast Dual Diode 6A, 1200V Hyperfast Dual Diode(6A, 1200V 超快双二极管)
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File Size |
96.95K /
5 Page |
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RENESAS[Renesas Electronics Corporation]
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Part No. |
RJK4514DPK
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OCR Text |
...rmation
Part No. RJK4514DPK-00-T0 Quantity 360 pcs Box (Tube) Shipping Container
Rev.1.00 Feb 13, 2007 page 3 of 3
0.3
Sales Strat...204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (2... |
Description |
Silicon N Channel MOS FET High Speed Power Switching
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File Size |
70.81K /
4 Page |
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