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  t0-204 Datasheet PDF File

For t0-204 Found Datasheets File :: 137    Search Time::1.844ms    
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    HA17431HLP HA17431HUP HA17431HLTP HA17431HP HA17432HLTP HA17432HUP

Hitachi,Ltd.
Hitachi Semiconductor
Part No. HA17431HLP HA17431HUP HA17431HLTP HA17431HP HA17432HLTP HA17432HUP
OCR Text ... 4.0 mw/c. 4. 15 mm 25 mm t0.7mm alumina ceramic board,ta 25c. if ta > 25c, derate by 6.4 mw/c. ha17431h series rev.0, sep. 2001, page 4 of 15 electrical characteristics (ta = 25c, i k = 10 ma) item symbol min typ max unit test...
Description Shunt Regulator 并联稳压
Shunt Regurators

File Size 135.49K  /  15 Page

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    ST Microelectronics
Part No. STTA506B-TR
OCR Text ...ics conduction losses : p1 = v t0 . i f(av) + r d . i f 2 (rms) reverse losses : p2 = v r . i r . (1 - d ) application data (contd) ...204 0.212 c 0.45 0.60 0.017 0.023 c2 0.48 0.60 0.018 0.023 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.251...
Description TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE

File Size 341.02K  /  10 Page

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    IXYS, Corp.
Part No. VWO85-12IO1
OCR Text ... = 85 a; t vj = 25c < 1.67 v v t0 for power-loss calculations only 0.85 v r t 11 m v gt v d = 6 v t vj = 25c < 1.5 v t vj = -40c < 1.6...204 k/w d s creeping distance on surface 12.7 mm d a creepage distance in air 9.4 mm a max. allowabl...
Description 42.39 A, 1200 V, SCR MODULE-12

File Size 73.88K  /  2 Page

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    INTERSIL[Intersil Corporation]
Part No. RHRP6120CC
OCR Text ...SENSE VDD IL IV IL 12V t0 t1 t2 t FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS...204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 10...
Description 6A/ 1200V Hyperfast Dual Diode
6A, 1200V Hyperfast Dual Diode(6A, 1200V 超快双二极管)

File Size 96.95K  /  5 Page

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    RJH1CD6DPQ-A0

Renesas Electronics Corporation
Part No. RJH1CD6DPQ-A0
OCR Text ...pping container rjh1cd6dpq-a0-t0 240 pcs box (tube) notice 1. all information included in this document is current as of the dat...204, 205, azia center, no.1233 lujiazui ring rd., pudong district, shanghai 200120, china tel: +86-...
Description 1200 V - 20 A - IGBT Application: Inverter

File Size 47.65K  /  4 Page

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    RJH1CD5DPQ-A0

Renesas Electronics Corporation
Part No. RJH1CD5DPQ-A0
OCR Text ...pping container rjh1cd5dpq-a0-t0 240 pcs box (tube) notice 1. all information included in this document is current as of the dat...204, 205, azia center, no.1233 lujiazui ring rd., pudong district, shanghai 200120, china tel: +86-...
Description 1200 V - 15 A - IGBT Application: Inverter

File Size 47.65K  /  4 Page

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    RJH1CD7DPQ-A0

Renesas Electronics Corporation
Part No. RJH1CD7DPQ-A0
OCR Text ...pping container rjh1cd7dpq-a0-t0 240 pcs box (tube) notice 1. all information included in this document is current as of the dat...204, 205, azia center, no.1233 lujiazui ring rd., pudong district, shanghai 200120, china tel: +86-...
Description 1200 V - 25 A - IGBT Application: Inverter

File Size 47.66K  /  4 Page

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    RJU60C6SDPK-M0

Renesas Electronics Corporation
Part No. RJU60C6SDPK-M0
OCR Text ...pping container rju60c6sdpk-m0-t0 360 pcs box (tube) notice 1. all information included in this document is current as of the dat...204, 205, azia center, no.1233 lujiazui ring rd., pudong district, shanghai 200120, china tel: +86-...
Description Single Diode Fast Recovery Diode

File Size 74.21K  /  4 Page

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    RENESAS[Renesas Electronics Corporation]
Part No. RJK4514DPK
OCR Text ...rmation Part No. RJK4514DPK-00-T0 Quantity 360 pcs Box (Tube) Shipping Container Rev.1.00 Feb 13, 2007 page 3 of 3 0.3 Sales Strat...204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (2...
Description Silicon N Channel MOS FET High Speed Power Switching

File Size 70.81K  /  4 Page

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