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  t2514xks t2516xks snubberless Datasheet PDF File

For t2514xks t2516xks snubberless Found Datasheets File :: 116+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 |   

    A290021T-120 A290021TL-55 A290021T-90 A290021TL-120 A290021TL-90 A290021TV-120 A290021T-150 A290021T-55 A290021T-70 A290

AMIC Technology, Corp.
AMIC Technology Corporation
Part No. A290021T-120 A290021TL-55 A290021T-90 A290021TL-120 A290021TL-90 A290021TV-120 A290021T-150 A290021T-55 A290021T-70 A290021TL-150 A29002T-55 A29002T-90 A29002U-90 A29002UV-90 A29002TV-90 A290021U-90 A290021U-70 A290021U-55 A290021U-150 A290021U-120 A29002U-55 A29002T-70 A29002TV-150 A290021TV-90 A290021UL-90 A290021UV-90 A290021UL-150 A290021UV-150 A29002UL-70 A29002UV-70 A29002U-70 A290021UV-120 A290021UV-70 A290021UV-55 A29002U-150 A29002UL-150 A29002UV-150 A29002U-120 A29002TL-120 A29002TL-70 A290021TL-70 A29002TL-150 A29002TL-55 A290021TV-150 A29002TV-120 A29002TV-70 A290021TV-55 A29002TV-55 A290021TV-70 A290021UL-120 A290021UL-55 A290021UL-70 A29002UL-120 A29002T-150
Description 256K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory 256K × 8位CMOS 5.0伏只,引导扇区闪
Triac; Thyristor Type:snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):25A; Gate Trigger Current (QI), Igt:50mA; Current, It av:25A; Forward Current:24A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
Triac; Thyristor Type:snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Current, It av:16A; Forward Current:16A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
MB 32C 32#20 SKT RECP
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):16A; Peak Non Repetitive Surge Current, Itsm:200A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):16A; Peak Non Repetitive Surge Current, Itsm:200A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
MB 6C 6#20 PIN RECP
Reed Switch; Pull-In Amp Turns Max:20; Pull-In Amp Turns Min:10; Circuitry:SPST-NO; Switching Current Max:0.5A; Switching Voltage Max:200V; Mounting Type:Surface Mount; Contact Rating:10 VA; Supply Current:1.5A RoHS Compliant: Yes
RELAY, REED SPDT 12VDC
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):16A; Peak Non Repetitive Surge Current, Itsm:200A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
Triac; Thyristor Type:snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Current, It av:16A; Forward Current:16A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Limit Switch,VERTICAL R/A,SPDT,ON-(ON),QUICK CONNECT Terminal,SIMULATED ROLLER
SWITCHES
256K X 8 Bit CMOS 5.0 Volt-only/ Boot Sector Flash Memory

File Size 318.61K  /  32 Page

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    KPY32-R Q62705-K150

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. KPY32-R Q62705-K150
Description Triac; Thyristor Type:snubberless; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105
Silicon Piezoresistive Relative Pressure Sensor
Silicon Piezoresistive Relative Press...

File Size 92.76K  /  3 Page

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    MG600Q1US41 E002366

Toshiba Corporation
Toshiba Semiconductor
Part No. MG600Q1US41 E002366
Description Triac; Thyristor Type:snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
From old datasheet system
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

File Size 287.24K  /  6 Page

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    MICRO-ELECTRONICS[Micro Electronics]
Part No. MY31W MY31 MY31C MY31D MY31T
Description Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:5mA
Triac; Thyristor Type:snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt
YELLOW LED LAMPS

File Size 46.34K  /  1 Page

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    California Eastern Laboratories
Part No. NX8341UH-AZ NX8341UN-AZ
Description PLIERS, COMBINATION REDLINE 200MMPLIERS, COMBINATION REDLINE 200MM; Jaw type:Combination; Length:200mm; Handle type:High grip; Capacity, cutting hard wire:2.0mm; Capacity, jaw max:2mm; Joint Construction:lap; Length, jaw:44mm; Width,
NECs 1310 nm AlGalnAs MQW-DFB TOSA FOR 10 Gb/s APPLICATION
Triac; Thyristor Type:snubberless; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Current, It av:8A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes

File Size 302.83K  /  7 Page

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    BZX55SERIES BZX55-C0V8 BZX55C13 BZX55C10 BZX55C11 BZX55C9V1 BZX55C20 BZX55C15 BZX55 BZX55C150 BZX55C200 BZX55C130

Shanghai Lunsure Electronic...
Chenyi Electronics
List of Unclassifed Manufacturers
Shanghai Lunsure Electr...
Part No. BZX55SERIES BZX55-C0V8 BZX55C13 BZX55C10 BZX55C11 BZX55C9V1 BZX55C20 BZX55C15 BZX55 BZX55C150 BZX55C200 BZX55C130
Description Silicon planar zener diode. 0.5 W. Zener voltage range Vznom = 130 V, Izt = 1 mA for Vzt .
Silicon planar zener diode. 0.5 W. Zener voltage range Vznom = 150 V, Izt = 1 mA for Vzt .
0.5W SILICON PLANAR ZENER DIODES
25 A standard and snubberless" triacs
Silicon planar zener diode. 0.5 W. Zener voltage range Vznom = 200 V, Izt = 1 mA for Vzt .

File Size 114.57K  /  4 Page

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    A29001 A290011T-55 A290011T-70 A290011TL-70 A290011TV-70 A290011UL-90 A290011UV-70 A290011UV-90 A29001TL-55 A29001U-90 A

AMIC Technology Corporation
AMIC Technology, Corp.
Part No. A29001 A290011T-55 A290011T-70 A290011TL-70 A290011TV-70 A290011UL-90 A290011UV-70 A290011UV-90 A29001TL-55 A29001U-90 A29001UL-55 A29001UV-70 A29001UV-90 A290011T-90 A290011TL-55 A290011TL-90 A290011U-55 A290011U-70 A290011U-90 A29001T-70 A29001T-90 A29001TV-55 A29001TV-70 A29001TV-90 A29001U-55 A290011TV-55 A290011TV-90 A290011UL-55 A290011UL-70 A290011UV-55 A29001T-55 A29001TL-90 A29001U-70 A29001UL-70 A29001UL-90 A29001UV-55 A29001TL-70
Description 128K X 8 Bit CMOS 5.0 Volt-only/ Boot Sector Flash Memory
5015 RR 4#12 SKT RECPT
5015 RR 4#12 PIN RECPT
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):16A; Peak Non Repetitive Surge Current, Itsm:200A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):16A; Peak Non Repetitive Surge Current, Itsm:200A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Triac; Thyristor Type:snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):25A; Gate Trigger Current (QI), Igt:50mA; Current, It av:25A; Forward Current:24A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
Triac; Thyristor Type:snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):25A; Gate Trigger Current (QI), Igt:50mA; Current, It av:25A; Forward Current:24A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
128K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K的8位CMOS 5.0伏只,引导扇区闪

File Size 316.86K  /  32 Page

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    Q62702-B257 BBY34D Q62702-B194 BBY34C

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-B257 BBY34D Q62702-B194 BBY34C
Description Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 V) 硅调谐变容二极管(Hyperabrupt交界调谐二极管频率线性调谐范 12五)
Triac; Thyristor Type:snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Forward Current:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V)
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 V)

File Size 20.70K  /  2 Page

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    1N829UR MLL821 1N822AUR 1N822AUR-1 1N829UR-1TR 1N828AUR 1N828AUR-1 1N828AUR-1TR 1N821AUR-1TR 1N827UR MLL829TR-1 1N821AUR

MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
Part No. 1N829UR MLL821 1N822AUR 1N822AUR-1 1N829UR-1TR 1N828AUR 1N828AUR-1 1N828AUR-1TR 1N821AUR-1TR 1N827UR MLL829TR-1 1N821AUR 1N821AUR-1 1N821AURTR 1N821AURTR-1 1N821UR 1N821UR-1 1N821UR-1TR 1N821URTR 1N821URTR-1 1N822AUR-1TR 1N822AURTR 1N822AURTR-1 1N822UR 1N822UR-1 1N822UR-1TR 1N822URTR 1N822URTR-1 1N823AUR 1N823AUR-1 1N823AUR-1TR 1N823AURTR 1N823AURTR-1 1N823UR 1N823UR-1 1N823UR-1TR 1N823URTR 1N823URTR-1 1N824AUR 1N824AUR-1 1N824AUR-1TR 1N824AURTR 1N824AURTR-1 1N824UR 1N824UR-1 1N824UR-1TR 1N824URTR 1N824URTR-1 1N825AUR 1N825AUR-1 1N825AUR-1TR 1N825AURTR 1N825AURTR-1 1N825UR 1N825UR-1 1N825UR-1TR 1N825URTR 1N825URTR-1 1N826AUR 1N826AUR-1 1N826AUR-1TR 1N826AURTR 1N826AURTR-1 1N826UR 1N826UR-1 1N826UR-1TR 1N826URTR 1N826URTR-1 1N827AUR 1N827AUR-1 1N827AUR-1TR 1N827AURTR-1 1N827UR-1 1N827UR-1TR 1N827URTR 1N827URTR-1 1N828AURTR 1N828AURTR-1 1N828UR 1N828UR-1TR 1N828URTR 1N828URTR-1 1N829AUR 1N829AUR-1 1N829AUR-1TR 1N829AURTR 1N829AURTR-1 1N829UR-1 1N829URTR 1N829URTR-1 JAN1N821AUR JAN1N821AUR-1 JAN1N821AUR-1TR JAN1N821AURTR JAN1N821AURTR-1 JAN1N821UR JAN1N821UR-1 JAN1N821UR-1TR JAN1N821URTR JAN1N821URTR-1 JAN1N822AUR JAN1N822AUR-1 JAN1N822AUR-1TR JAN1N822AURTR JAN1N822AURTR-1 JAN1N822UR
Description From old datasheet system
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes
6000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
3000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
Triac; Thyristor Type:snubberless; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
3.3 V quad buffer; 3-state - Description: 3.3V Buffer/Line Driver with Active LOW Output Enable (3-State) ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: -32/ 64 mA ; Propagation delay: 2.9@3.3V ns; Voltage: 2.7-3.6 V
Single Supply Voltage Supervisor for 5V Systems with Programmable Time Delay 8-PDIP -40 to 85
Single Supply Voltage Supervisor ror 5V Systems with Programmable Time Delay 8-SOIC 0 to 70
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Current, It av:6A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
Triac; Thyristor Type:snubberless; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes 6.55 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA
3.3 V Quad 2-input NAND gate - Description: 3.3V Quad 2-Input NAND Gate ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: -32/ 64 mA ; Propagation delay: 2.7@3.3V ns; Voltage: 2.7-3.6 V 6.2
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA
Single Supply Voltage Supervisor ror 5V Systems with Programmable Time Delay 8-SOIC -40 to 85 6.2
Single Supply Voltage Supervisor for 5V Systems with Programmable Time Delay 8-SOIC 0 to 70 6.2
SOCKET, D, PCB, STRAIGHT, 9WAY; Connector type:D Sub; Gender:Socket; Ways, No. of:9; Mating cycles, No. of:500; Termination method:Straight PCB; Material, contact:Copper alloy; Material:Steel; Contacts, No. of:9; Material, RoHS Compliant: Yes 6.2
0TC Reference Voltage Zener

File Size 184.26K  /  3 Page

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    M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554BG3-CD5_CC M470T6554BGZ0-CD5_CC M470T6554BGZ3-CD5_CC M470T6554BZ0-LD5_C

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
Part No. M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554BG3-CD5_CC M470T6554BGZ0-CD5_CC M470T6554BGZ3-CD5_CC M470T6554BZ0-LD5_CC M470T6554BZ3-LD5_CC M470T2953BY0-LD5_CC M470T3354BG0-CD5_CC M470T3354BG3-CD5_CC M470T3354BGZ0-CD5_CC M470T3354BGZ3-CD5_CC M470T2953BSY3-CD5_CC M470T3354BZ0-LD5_CC M470T3354BZ3-LD5_CC M470T2953BY3-LD5_CC M470T2953BS3-CD5_CC M470T2953BSY0-CD5_CC M470T2953BXX M470T2953BY0 M470T2953BY0-LD5/CC M470T3354BZ0-LD5/CC M470T6554BZ0-LD5/CC M470T2953BS0-CD5/CC M470T3354BG0-CD5/CC M470T6554BG0-CD5/CC M470T3354BZ3-LD5/CC M470T2953BY3-LD5/CC M470T6554BZ3-LD5/CC M470T3354BG3-CD5/CC M470T6554BG3-CD5/CC M470T2953BSY0-CD5/CC M470T2953BSY3-CD5/CC M470T2953BS3-CD5/CC M470T3354BGZ0-CD5/CC M470T3354BGZ3-CD5/CC M470T6554BGZ3-CD5/CC M470T6554BGZ0-CD5/CC
Description 40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes

File Size 325.20K  /  19 Page

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