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  tmos e fet power field effect Datasheet PDF File

For tmos e fet power field effect Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |   

    MTP10N40 MTP10N40E ON2540 MTP10N40E-D

ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MTP10N40 MTP10N40e ON2540 MTP10N40e-D
Description tmos e-FeT High energy Power FeT N-Channel enhancement-Mode Silicon Gate
tmos POWeR FeT 10 AMPeReS 400 VOLTS RDS(on) = 0.55 OHMS
From old datasheet system

File Size 249.12K  /  8 Page

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    MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
Part No. MTP4N50e MTP4N50e_D ON2612 MTP4N50e-D
Description tmos e-FeT High energy Power FeT N-Channel enhancement-Mode Silicon Gate
From old datasheet system
tmos POWeR FeT 4.0 AMPeReS 500 VOLTS RDSon = 1.5 OHMS

File Size 254.33K  /  8 Page

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    MTP3N50E MTP3N50E_D ON2604 MTP3N50 MTP3N50E-D

ON Semiconductor
Motorola, Inc.
Part No. MTP3N50e MTP3N50e_D ON2604 MTP3N50 MTP3N50e-D
Description tmos e-FeT High energy Power FeT N-Channel enhancement-Mode Silicon Gate
tmos POWeR FeT 3.0 AMPeReS 500 VOLTS RDS(on) = 3.0 OHMS
From old datasheet system

File Size 251.59K  /  8 Page

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    MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D

ON Semiconductor
Motorola, Inc.
Part No. MTP3N60e_D ON2606 ON2605 MTP3N60e MTP3N60e-D
Description tmos e-FeT High energy Power FeT N-Channel enhancement-Mode Silicon Gate
tmos POWeR FeT 3.0 AMPeReS 600 VOLTS RDS(on) = 2.2 OHMS
From old datasheet system

File Size 180.78K  /  8 Page

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    MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06EZL-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
http://
Part No. MTP12N06eZL MTP12N06eZL_D ON2543 MTP12N06 MTP12N06eZL-D
Description tmos e-FeT High energy Power FeT N-Channel enhancement-Mode Silicon Gate
From old datasheet system
tmos POWeR FeT 12 AMPeReS 60 VOLTS RDS(on) = 0.180 OHM

File Size 221.74K  /  8 Page

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    MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB2N60e_D ON2407 MTB2N60e MTB2N60e-D
Description tmos e-FeT High energy Power FeT D2PAK for Surface Mount N-Channel enhancement-Mode Silicon Gate
tmos POWeR FeT 2.0 AMPeReS 600 VOLTS
From old datasheet system

File Size 270.78K  /  10 Page

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    MTB3N120E_D ON2421 MTB3N120E MTB3N120E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB3N120e_D ON2421 MTB3N120e MTB3N120e-D
Description tmos e-FeT High energy Power FeT D2PAK for Surface Mount N-Channel enhancement-Mode Silicon Gate
tmos POWeR FeT 3.0 AMPeReS 1200 VOLTS
From old datasheet system

File Size 321.60K  /  12 Page

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    MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422

MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. MTB3N60e_D ON2423 MTB3N60e MTB3N60e-D ON2422
Description From old datasheet system
tmos POWeR FeT 3.0 AMPeReS 600 VOLTS
tmos e-FeT High energy Power FeT D2PAK for Surface Mount N-Channel enhancement-Mode Silicon Gate

File Size 71.75K  /  4 Page

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    MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB4N80e1_D ON2427 MTB4N80e1 MTB4N80e1-D
Description tmos e-FeT High energy Power FeT D2PAK-SL Straight Lead N-Channel enhancement-Mode Silicon Gate
tmos POWeR FeT 4.0 AMPeReS 800 VOLTS
From old datasheet system

File Size 156.99K  /  8 Page

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    MTB2P50E_D ON2408 MTB2P50E MTB2P50E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB2P50e_D ON2408 MTB2P50e MTB2P50e-D
Description tmos e-FeT High energy Power FeT D2PAK for Surface Mount P-Channel enhancement-Mode Silicon Gate
tmos POWeR FeT 2.0 AMPeReS 500 VOLTS
From old datasheet system

File Size 273.51K  /  10 Page

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For tmos e fet power field effect Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |   

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