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				ST Microelectronics, Inc. STMICROELECTRONICS[STMicroelectronics]
Part No.	STC05DE120HV
OCR Text	...ective 1 23 4 to247-4L HV Internal schematic diagrams Description The STC05DE120HV is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing ...
Description	Hybrid emitter switched bipolar transistor ESBT? 1200V - 5A - 0.18 ohm Hybrid emitter switched bipolar transistor ESBT 1200V 5A 0.18 Ohm Hybrid emitter switched bipolar transistor ESBT㈢ 1200V - 5A - 0.18 ohm
File Size	208.37K / 9 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
Part No.	C04IE170HP STC04IE170HP
OCR Text	... 2002/93/EC European Directive to247-4L HP Internal schematic diagrams Applications Aux SMPS for three phase mains D...4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
Description	Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17OHM 发射极开关双极晶体管内酰胺酶1,700 -A - 0.17OHM
File Size	257.57K / 11 Page	View it Online	Download Datasheet

				ST Microelectronics STMicroelectronics
Part No.	2970 BYW99PI-200 BYW99PI-200RG BYW99P-200 BYW99W-200
OCR Text	...rs. Packaged in SOT93, TOP3I or TO247 this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity p...4 0.5 0.6 0.7 0.8 0.9 1 Fig.3 : Forward voltage drop versus forward current (maximum values). ...
Description	HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES From old datasheet system
File Size	295.98K / 6 Page	View it Online	Download Datasheet

				Ruichips Semiconductor ...
Part No.	RU75400Q
OCR Text	...ations absolute maximum ratings to247 n-channel mosfet g d s g s d ru75400q min. typ. max. bv dss drain-source breakdown voltage 75 v 1 t j =125c 30 v gs(th) gate threshold voltage 2 3 4 v i gss gate leakage current 100 na r ds(on) d...
Description	N-Channel Advanced Power MOSFET
File Size	253.88K / 8 Page	View it Online	Download Datasheet

				Ruichips Semiconductor ...
Part No.	RU1Z200Q
OCR Text	...e (rohs compliant) applications to247 g d s d ? high efficiency synchronous rectification in smps ? high speed power switching ? power suppl...4.5 v i gss gate leakage current 100 na r ds(on) drain-source on-state resistance 5.5 6.5 m ? v d...
Description	N-Channel Advanced Power MOSFET
File Size	400.08K / 8 Page	View it Online	Download Datasheet

				http:// ST Microelectronics, Inc. STMicroelectronics
Part No.	STC06IE170HV
OCR Text	...ss over time 1 23 4 to247-4L HV Description The STC06IE170HV is manufactured in Monolithic ESBT technology, aimed to provide the best performance in High Frequency / High voltage applications. It is designed for use in Gate ...
Description	Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17?/a> Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15 Ohm Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17з
File Size	129.14K / 8 Page	View it Online	Download Datasheet

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