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  vgdo Datasheet PDF File

For vgdo Found Datasheets File :: 363    Search Time::1.422ms    
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    PN4391 PN4393 PN4392

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PN4391 PN4393 PN4392
OCR Text ...5 to+150 150 mW C C VDS -VGSO -vgdo IG max. max. max. max. 40 40 40 50 V V V mA April 1989 2 Philips Semiconductors Product specification N-channel silicon field-effect transistors THERMAL RESISTANCE From junction to ambien...
Description N-channel silicon field-effect transistors

File Size 36.33K  /  6 Page

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    MGF4931AM

Mitsubishi Electric Semiconductor
Part No. MGF4931AM
OCR Text ...BSOLUTE MAXIMUM RATINGS Symbol vgdo VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature (Ta=25C ) Ratings -4 -4 IDSS 50 125 -55 to +...
Description SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)

File Size 48.11K  /  5 Page

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    MGFC36V5867

Mitsubishi Electric Semiconductor
Part No. MGFC36V5867
OCR Text ...XIMUM RATINGS Symbol Parameter vgdo Gate to drain voltage VGSO Gate to source voltage ID Drain current IGR Revese gate current IGF Forward gate current PT *1 Total power dissipation Tch Channel temperature Tstg Storage temperature *1 : Tc=...
Description 5.8-6.75GHz BAND 4W INTERNALLY MATCHED GaAs FET

File Size 243.27K  /  3 Page

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    J174 J176 J177 J175

Philips Semiconductors / NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. J174 J176 J177 J175
OCR Text ...tot Tstg Tj max. max. VDS VGSO vgdo -IG max. max. max. max. J174; J175; J176; J177 30 30 30 50 400 -65 to +150 150 V V V mA mW C C 250 K/W J176 J177 1 1 2 35 30 1 4 250 1 nA 1 nA 1.5 mA 20 mA 30 V 0.8 V 2.25 V 300 Apr...
Description P-channel silicon field-effect transistors
RESISTOR SILICONE 900 OHM 5W

File Size 33.72K  /  6 Page

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF0910A 0910A
OCR Text ...AXIMUM RATINGS (Ta=25C) Symbol vgdo VGSO ID IGR IGF PT Tch Tstg *1:TC=25C Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storag...
Description MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L S BAND POWER GaAs FET
From old datasheet system

File Size 25.38K  /  3 Page

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    MGF0916A

Mitsubishi Electric Semiconductor
Part No. MGF0916A
OCR Text ...e maximum ratings Symbol VGSO vgdo ID IGR IGF PT Tch Tstg Parameter Gate to sourcebreakdown voltage Gate to drain breakdown voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Sto...
Description L & S BAND GaAs FET ( SMD non - matched )

File Size 43.08K  /  4 Page

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    MGF4851A

Mitsubishi Electric Semiconductor
Part No. MGF4851A
OCR Text ...BSOLUTE MAXIMUM RATINGS Symbol vgdo VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature (Ta=25C ) Ratings -5 -5 IDSS 100 125 -65~125 ...
Description SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)

File Size 133.53K  /  5 Page

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    MGF4954A MGF4953A

Mitsubishi Electric Semiconductor
Part No. MGF4954A MGF4953A
OCR Text ...BSOLUTE MAXIMUM RATINGS Symbol vgdo VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature (Ta=25C ) Ratings -4 -4 60 50 125 -65 to +12...
Description SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)

File Size 203.88K  /  5 Page

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    EC3A01B ENN6612B

SANYO[Sanyo Semicon Device]
Part No. EC3A01B ENN6612B
OCR Text ...ture Storage Temperature Symbol vgdo IG ID PD Tj Tstg Conditions Ratings --20 10 1 100 150 --55 to +150 Unit V mA mA mW C C Electrical Characteristics at Ta=25C Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Drain Current Forw...
Description From old datasheet system
Electret Condenser Microphone Applications
Junction FETs

File Size 38.00K  /  5 Page

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    EC3A01H

Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
Part No. EC3A01H
OCR Text ...ture Storage Temperature Symbol vgdo IG ID PD Tj Tstg Conditions Ratings -20 10 1 100 150 --55 to +150 Unit V mA mA mW C C Electrical Characteristics at Ta=25C Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Drain Current Forwa...
Description N-Channel Silicon Junction FET - Electret Condenser Microphone Applications
Junction FETs

File Size 33.03K  /  5 Page

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For vgdo Found Datasheets File :: 363    Search Time::1.422ms    
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