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RFMD[RF Micro Devices]
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| Part No. |
RF3806PCK-415 RF3806
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| OCR Text |
... junction temperature (Tj), and wear out MTTF. Looking at two distinct examples will demonstrate how the above mentioned parameters are take...resistance on VREF line can be set to obtain IREF ranging from 41mA -60mA. The choice of voltage sup... |
| Description |
GaAs HBT PRE-DRIVER AMPLIFIER
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| File Size |
553.93K /
18 Page |
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it Online |
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ISOCOM LTD
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| Part No. |
ISM500S
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| OCR Text |
wear ne38 0ah, england email: isocom@dial.pipex.com - tel: +44 0191 4166546 - fax: +44 0191 4155055 ism200, 300, 400, 500: hybrid...resistance v io =500v 50 gohm 3 of 7
ac input option input parameter conditions min typ ma... |
| Description |
SPECIALTY OPTOELECTRONIC DEVICE
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| File Size |
58.26K /
7 Page |
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it Online |
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Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
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| Part No. |
SSM3J02T
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| OCR Text |
...c electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices shoul...resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on ... |
| Description |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
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| File Size |
135.95K /
5 Page |
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it Online |
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Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
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| Part No. |
SSM3J13T
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| OCR Text |
...c electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices shoul...resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board... |
| Description |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching Applications
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| File Size |
170.34K /
6 Page |
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it Online |
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Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
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| Part No. |
SSM3J14T
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| OCR Text |
...c electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices shoul...resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board... |
| Description |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch DC-DC Converters
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| File Size |
174.66K /
6 Page |
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it Online |
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Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
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| Part No. |
SSM5G01TU
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| OCR Text |
...c electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices shoul...resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board... |
| Description |
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Planar Diode DC-DC Converter for DSCs and Camcorders
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| File Size |
196.88K /
9 Page |
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it Online |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
SSM5N05FU
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| OCR Text |
...c electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices shoul...resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on ... |
| Description |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
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| File Size |
133.71K /
5 Page |
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it Online |
Download Datasheet |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
SSM5N15FE
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| OCR Text |
...c electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices shoul...resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on ... |
| Description |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
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| File Size |
140.34K /
5 Page |
View
it Online |
Download Datasheet |
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