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				SGS Thomson Microelectronics ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
Part No.	ST93C46A ST93C46AB1013TR ST93C46AB1TR ST93C46AB3013TR ST93C46AB3TR ST93C46AB6013TR ST93C46AB6TR ST93C46AM1013TR ST93C46AM1TR ST93C46AM3013TR ST93C46AM3TR ST93C46AM6013TR ST93C46AM6TR ST93C46C ST93C46CB1013TR ST93C46CB1TR ST93C46CB3013TR ST93C46CB3TR ST93C46CB6013TR ST93C46CB6TR ST93C46CM1013TR ST93C46CM1TR ST93C46CM3013TR ST93C46CM3TR ST93C46CM6013TR ST93C46CM6TR ST93C46T ST93C46TB1013TR ST93C46TB1TR ST93C46TB3013TR ST93C46TB3TR ST93C46TB6013TR ST93C46TB6TR ST93C46TM1013TR ST93C46TM1TR ST93C46TM3013TR ST93C46TM3TR ST93C46TM6013TR ST93C46TM6TR ST93C47AB1013TR ST93C47AB1TR ST93C47AB3013TR ST93C47AB3TR ST93C47AB6013TR ST93C47AB6TR ST93C47AM1013TR ST93C47AM1TR ST93C47AM3013TR ST93C47AM3TR ST93C47AM6013TR ST93C47AM6TR ST93C47C ST93C47CB1013TR ST93C47CB1TR ST93C47CB3013TR ST93C47CB3TR ST93C47CB6013TR ST93C47CB6TR ST93C47CM1013TR ST93C47CM1TR ST93C47CM3013TR ST93C47CM3TR ST93C47CM6013TR ST93C47CM6TR ST93C47T ST93C47TB1013TR ST93C47TB1TR ST93C47TB3013TR ST93C47TB3TR ST93C47TB6013TR ST93C47TB6TR ST93C47TM1013TR ST93C47TM1TR ST93C47TM3013TR ST93C47TM3TR ST93C47TM6013TR ST93C47TM6TR ST93C46CM1 2442 ST93C46 -ST93C47AB3013TR -ST93C46CM1 -ST93C46CM1013TR
OCR Text	...ected (or connected to VCC) the x16 organization is selected, when ORG is connected to Ground (VSS) the x8 organization is selected. When the ST93C46 is in standby mode, the ORG input should be unconnected or set to either VSS or VCC in ord...
Description	From old datasheet system 1K (64 x 16 or 128 x 8) SERIAL MICROWIRE EEPROM MOSFET; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:3.4A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes; Mounting Type:Surface Mount; Package/Case:6-TSOP RoHS Compliant: Yes MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-12V; Continuous Drain Current, Id:-4.5A; On-Resistance, Rds(on):0.04ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:6-TSOP; Leaded Process Compatible:No MOSFET, P TSOP-6MOSFET, P TSOP-6; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:12V; Case style:TSOP-6; Current, Id cont:4.5A; Current, Idm pulse:20A; Power, Pd:1.1W; Resistance, Rds on:0.04R; SMD:1; Charge, Qrr typ Circular Connector; No. of Contacts:13; Series:JT02R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:10; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:10-13 Circular Connector; No. of Contacts:13; Series:JT02R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:10; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:10-13 1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM 000 64 x 1628 × 8 MICROWIRE的串行EEPROM 1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM 000 64 x 16128 × 8 MICROWIRE的串行EEPROM
File Size	109.99K / 13 Page	View it Online	Download Datasheet

				Intel Corporation
Part No.	BXSTS100P
OCR Text	...mms) l one pci express* 2.0 x16 (x8 electrical) slot plus one intel? i/o expansion module (pci express 2.0 x8) l flexible storage controller options l designed with state-of-the-art power and cooling optimizations for dema...
Description	Intel? Server Board
File Size	3,334.64K / 8 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers List of Unclassifed Manufac... List of Unclassifed Man...
Part No.	IP400-R ET830-16 ICOOL015-P ET900 ET900H IP510 HSET830-BGA
OCR Text	...x pci, 6x pci-e(x1), 1x pci-e(x16) vga controller mobile intel ? 945gme express integrated graphics media accelerator 950 (gma 950), for crt/tv out vga memory supports dvmt 3.0; max. shared memory - 224mb display interface supports 18-b...
Description	Supports Intel? Core? Duo processors, 533/667MHz FSB
File Size	1,605.25K / 1 Page	View it Online	Download Datasheet

				ALSC[Alliance Semiconductor Corporation] ETC
Part No.	AS4LC4M16S0 AS4LC4M16S0-10FTC AS4LC4M16S0-10TC AS4LC4M16S0-75TC AS4LC4M16S0-8TC AS4LC8M8S0 AS4LC8M8S0-10FTC AS4LC8M8S0-10TC AS4LC8M8S0-75TC AS4LC8M8S0-8TC
OCR Text	...uts except CLK, CKE, UDQM/LDQM (x16), DQM (x8). Row and column addresses are multiplexed. Row address: A0~A11. Column address (8Mx8): A0~A8. Column address (4Mx16): A0~A7. Memory cell array is organized in 4 banks. BA0 and BA1 select which ...
Description	3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
File Size	387.58K / 24 Page	View it Online	Download Datasheet

				Numonyx B.V
Part No.	NAND512R3A2SN6F
OCR Text	...cations nand interface ? x8 or x16 bus width ? multiplexed address/ data supply voltage: 1.8 v, 3 v page size ? x8 device: (512 + 16 spare) bytes ? x16 device: (256 + 8 spare) words block size ? x8 device: (16k + 512 spare) bytes ? x16 ...
Description	512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories
File Size	1,315.50K / 55 Page	View it Online	Download Datasheet

				Samsung Electronic Samsung semiconductor
Part No.	K4S280832E-TC75 K4S280832E-TL75 K4S281632E-TC60 K4S281632E-TC75 K4S281632E-TL60 K4S281632E-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 K4S280432E-TC75 K4S280432E-TL75
OCR Text	x16) CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.2 May. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 May. 2003 SDRAM 128Mb E-die (x4, x8, x16) Revisi...
Description	128Mb F-die SDRAM Specification 128Mb E-die SDRAM Specification
File Size	142.11K / 14 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280832F-TC75 K4S280832F-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 TL431CDT K4S280432F-TCL75 K4S280832F-TCL75 K4S280432F-TC75 K4S281632F-TCL60 K4S281632F-TCL75 K4S280432F-TL75
OCR Text	x16) Preliminary CMOS SDRAM 128Mb F-die SDRAM Specification Revision 0.2 November. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 November. 2003 SDRAM 128Mb F-die...
Description	128Mb F-die SDRAM Specification 128Mb的的F - SDRAM内存芯片规格
File Size	143.50K / 14 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S510832B-TC75 K4S510832B-TCL75 K4S510432B-TC K4S510432B-TC75 K4S510432B-TCL75 K4S511632B-TC75 K4S511632B-TCL75
OCR Text	x16) CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004 SDRAM 512Mb B-die (x4, x8, x16)...
Description	512Mb B-die SDRAM Specification
File Size	147.30K / 15 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 K4S560432E-NC K4S560432E-NCL75 K4S561632E-NC75
OCR Text	x16) CMOS SDRAM 256Mb E-die SDRAM Specification 54pin sTSOP-II Revision 1.0 August. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 August, 2003 SDRAM 256Mb E-die ...
Description	16M x 16 SDRAM, LVTTL, 133MHz 256Mb E-die SDRAM Specification 54pin sTSOP-II
File Size	205.22K / 14 Page	View it Online	Download Datasheet

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