-50v -3a pdf Datasheet P12 Full Text Search --- IC-ON-LINE


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-50v -3a Datasheet PDF File

For -50v -3a Found Datasheets File :: 3143 Search Time::1.563ms
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				INTERSIL[Intersil Corporation]
Part No.	IRFU420 IRFR420 FN2411
OCR Text	...ance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 60mH, RG = 25, peak IAS = 2.5A. Typical Performance Curves 1.2 POWER DISSIP...3A 1.8 4 VGS = 20V 1.2 2 0.6 0 0 0 2 4 6 ID, DRAIN CURRENT (A) 8 10 -40 ...
Description	2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs(2.5A, 500V, 3.000 Ω, N沟道功率MOS场效应管) 2.5A 500V 3.000 Ohm N-Channel Power MOSFETs From old datasheet system
File Size	54.58K / 7 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRLRU210A IRLU210A
OCR Text	...emperature L=5mH, IAS=2.7A, VDD=50V, RG=27, Starting TJ =25C ISD 3.3A, di/dt 140A/s, VDD BVDSS , Starting TJ =25C Pulse Test: Pulse Width = 250s, Duty Cycle 2% Essentially Independent of Operating Temperature 2 1&+$11(/ 32:(5 026)...
Description	Advanced Power MOSFET
File Size	232.57K / 7 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRLRU220A IRLU220A
OCR Text	...rature (2) L=2mH, IAS=4.6A, VDD=50V, RG=27, Starting TJ =25C (3) ISD 5A, di/dt 180A/s, VDD BVDSS , Starting TJ =25C (4) Pulse Test: Pulse Width = 250s, Duty Cycle 2% (5) Essentially Independent of Operating Temperature 2 1&+$11(/ ...
Description	Advanced Power MOSFET
File Size	219.06K / 7 Page	View it Online	Download Datasheet

				ZETEX[Zetex Semiconductors]
Part No.	FMMT618 FMMT617 FMMT619 FMMT625 FMMT624
OCR Text	...0V f=100MHz VCB=10V, f=1MHz VCC=50V, IC=0.5A IB1=-IB2=50mA 5 8.3 100 100 100 26 110 180 0.85 0.74 400 450 45 15 135 6 160 1500 10 50 200 300 1.0 1.0 Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward ...
Description	From old datasheet system NPN SILICON POWER (SWITCHING) TRANSISTORS
File Size	295.04K / 4 Page	View it Online	Download Datasheet

				ZETEX[Zetex Semiconductors]
Part No.	FMMT723 FMMT717 FMMT718 FMMT722 FMMT720
OCR Text	...100MHz VC B=-10V, f=1MHz VC C =-50v, IC =-0.5A IB1 =IB2 =-50mA Collector-Base V(BR) CBO Breakdown Voltage Collector-Emitter V(BR) CEO Breakdown Voltage Emitter-Base V(BR)EBO Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Cur...
Description	SILICON POWER (SWITCHING) TRANSISTORS
File Size	346.61K / 4 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE104
OCR Text	.... . . . . . . . . . . . . . . . 50V Collector-Emitter Voltage (RBE = 68), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....3A Power Dissipation (TC +55C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description	Germanium PNP Transistor Audio Frequency Power Amplifier
File Size	19.91K / 2 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE2923
OCR Text	...mum junction temperature. VDD = 50V, starting TJ = +25C, L = 11mH, RG = 25, IAS = 8.8A ISD 8.8A, di/dt 100A/s, VDD 500V, TJ +150C Pules ...3A, Note 4 VDS = VGS, ID = 250A VDS = 50V, ID = 5.3A, Note4 VDS = 500V, VGS = 0V VDS = 400V, VGS = 0...
Description	MOSFET N-Ch, Enhancement Mode High Speed Switch
File Size	28.63K / 3 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE2924
OCR Text	...mum junction temperature. VDD = 50V, starting TJ = +25C, L = 16mH, RG = 25, IAS = 6.8A ISD 6.8A, di/dt 80A/s, VDD 600V, TJ +150C Pules Width 300s, Duty Cycle 2%. Electrical Characteristics: (TJ = +25C unless otherwise specified) P...
Description	MOSFET N-Ch, Enhancement Mode High Speed Switch
File Size	28.62K / 3 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE2932 NTE2930 NTE2931
OCR Text	... 2. L = 2mH, IAS = 21.3A, VDD = 50V, RG = 27, Starting TJ = +25C. Note 3. ISD 32A, di/dt 320A/s, VDD V(BR)DSS, Starting TJ = +25C. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Drain-Source Breakdown Vo...
Description	MOSFET N-Channel, Enhancement Mode High Speed Switch
File Size	23.34K / 3 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE2934
OCR Text	...2. L = 15mH, IAS = 11.5A, VDD = 50V, RG = 27, Starting TJ = +25C. Note 3. ISD 17A, di/dt 250A/s, VDD V(BR)DSS, Starting TJ = +25C. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Drain-Source Breakdown Vo...
Description	MOSFET N-Channel, Enhancement Mode High Speed Switch
File Size	23.36K / 3 Page	View it Online	Download Datasheet

For -50v -3a Found Datasheets File :: 3143 Search Time::1.563ms
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