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0.081 Datasheet PDF File

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				TriQuint Semiconductor, Inc.
Part No.	TGC4403 TGC4403-15
OCR Text	...ghz ? chip dimensions: 2.068 x 0.88 x 0.1 mm ? technology: 3mi 0.25 um power phemt ? bias: vd = 5 v, id = 150 ma, vg = -0.5 v typical ? 10 ...081 x 0.081 vdbl bond pad #5 0.081 x 0.081 vg bond pad #4 0.100 x 0.150 rf out bond pad #3 0.081 x 0...
Description	8 - 15 GHz Doubler with Amplifier
File Size	390.45K / 11 Page	View it Online	Download Datasheet

				C&K Components C.K Components
Part No.	K12ABK12.5NL3061R K12ABK2.5NL3061R K12ABKGN2.5NL3061R K12AGN12.5NL3061R K12AGY21.5NOD K12AGY21.5NOD1R K12ABKGN12.5NL3061R
OCR Text	... white bu blue t ravel* 1 1 mm (0.039) 1.5 1.5 mm (0.059) 2 2 mm (0.079) operating for ce*** 1.5n od 1.5 n without snap-point 2.5n 2.5 n 3...081 ) 0, 9 1,1 +0 , 05 pcb la yout, mounting side pcb layout, mounting side key switch...
Description	High Performance Key Switches KEYPAD SWITCH, SPST, MOMENTARY-TACTILE, 0.1A, 30VDC, 1.5 N, THROUGH HOLE-STRAIGHT High Performance Key Switches
File Size	270.29K / 6 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc.
Part No.	PE-51506 PE-51507 PE-51508 PE-51511 PE-51514 PE-51515 PE-51517 PE-51509 PE-51510 PE-51512 PE-51513 PE-51516 PE-51518 PE-51520
OCR Text	...) no dc 5 (in .003) pe-51506 17.0 17.0 190 130 2460 40.0 140 0.0065 3 0.081 pe-51507 32.0 16.0 290 200 4100 70.7 270 0.0092 4 0.081 pe-51508 60.0 16.0 390 270 7700 120.0 470 0.012 5 0.081 pe-51509 14.0 10.0 135 95 700 28.5 73 0.009 1 0.057 ...
Description	THT Toroidal Inductors - High Current 通孔插装环形电感高电
File Size	75.42K / 1 Page	View it Online	Download Datasheet

				BOURNS INC Bourns Electronic Solutions
Part No.	1140-4R7M-RC 1140-101K-RC 1140-3R3M-RC 1140-681K-RC 1140-471K-RC 1140-820K-RC 1140-821K-RC 1140-822K-RC 1140-2R2M-RC 1140-561K-RC 1140-560K-RC 1140-562K-RC 1140-103K-RC 1140-182K-RC 1140-181K-RC 1140-102K-RC 1140-120K-RC 1140-121K-RC 1140-122K-RC 1140-123K-RC 1140-150K-RC 1140-152K-RC 1140-151K-RC 1140-153K-RC 1140-180K-RC 1140-1R8M-RC
OCR Text	.... dim. d nom. 1140-1r8m-rc 1.8 0.002 27 1.11 0.081 1140-2r2m-rc 2.2 0.002 27 1.11 0.081 1140-2r7m-rc 2.7 0.003 27 1.11 0.081 1140-3r3m-rc 3.3 0.003 27 1.11 0.081 1140-3r9m-rc 3.9 0.003 27 1.11 0.081 1140-4r7m-rc 4.7 0.0...
Description	RF Choke; Series:1140; Inductance:4.7uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:27A; DC Resistance Max:0.003ohm; Leaded Process Compatible:Yes; Body Material:Ferrite RF Choke; Series:1140; Inductance:100uH; Inductance Tolerance: /- 10 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:14.4A; DC Resistance Max:0.025ohm; Leaded Process Compatible:Yes; Body Material:Ferrite RF Choke; Series:1140; Inductance:3.3uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:27A; DC Resistance Max:0.003ohm; Leaded Process Compatible:Yes; Body Material:Ferrite RF Choke; Series:1140; Inductance:680uH; Inductance Tolerance: /- 10 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:7.2A; DC Resistance Max:0.139ohm; Leaded Process Compatible:Yes; Body Material:Ferrite RF Choke; Series:1140; Inductance:470uH; Inductance Tolerance: /- 10 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:7.2A; DC Resistance Max:0.114ohm; Leaded Process Compatible:Yes; Body Material:Ferrite Very high current capacity Low DCR RF Choke; Series:1140; Inductance:82uH; Inductance Tolerance: /- 10 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:14.4A; DC Resistance Max:0.023ohm; Leaded Process Compatible:Yes; Body Material:Ferrite RF Choke; Series:1140; Inductance:2.2uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:27A; DC Resistance Max:0.002ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
File Size	424.46K / 1 Page	View it Online	Download Datasheet

				BOURNS INC Bourns Electronic Solutions
Part No.	1130-4R7M-RC 1130-1R2M-RC 1130-6R8M-RC 1130-100K-RC 1130-101K-RC 1130-120K-RC 1130-121K-RC 1130-151K-RC 1130-150K-RC 1130-122K-RC 1130-180K-RC 1130-181K-RC 1130-182K-RC 1130-1R0M-RC 1130-1R5M-RC 1130-1R8M-RC 1130-220K-RC 1130-221K-RC 1130-222K-RC 1130-270K-RC 1130-271K-RC 1130-2R7M-RC 1130-2R2M-RC 1130-330K-RC 1130-331K-RC 1130-390K-RC 1130-332K-RC 1130-391K-RC 1130-392K-RC
OCR Text	...rox. dim. d nom. 1130-1r0m-rc 1.0 0.003 21 0.80 0.081 1130-1r2m-rc 1.2 0.003 21 0.80 0.081 1130-1r5m-rc 1.5 0.003 21 0.80 0.081 1130-1r8m-rc 1.8 0.003 21 0.80 0.081 1130-2r2m-rc 2.2 0.003 21 0.80 0.081 1130-2r7m-rc 2.7 ...
Description	RF Choke; Series:1130; Inductance:4.7uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:21A; DC Resistance Max:0.003ohm; Leaded Process Compatible:Yes; Body Material:Ferrite RF Choke; Series:1130; Inductance:1.2uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:21A; DC Resistance Max:0.003ohm; Leaded Process Compatible:Yes; Body Material:Ferrite RF Choke; Series:1130; Inductance:6.8uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:21A; DC Resistance Max:0.004ohm; Leaded Process Compatible:Yes; Body Material:Ferrite High Current Chokes Very high current capacity Fixed lead spacing
File Size	465.60K / 1 Page	View it Online	Download Datasheet

				AVX Corporation
Part No.	TPME2280020018 TPME6870040018 TPME6870040023 TPME1580020012 TPME1580020018 TPME1580040018 TPME1580040015 TPME1580020015 TPME1080040018 TPME1080040023 TPME477K006R0023 TPME477M010R0023 TPMD4770040035 TPMD4770040025 TPMD1080040025 TPMV1080040018 TPMD1080040045
OCR Text	...per 1000 hours at 85c, v r with 0.1 /v series impedance, 60% confidence level technical specifications case dimensions: millimeters (inches)...081 0.036 tpme687006#0018 e 680 6.3 41 6 18 3 3.873 3.486 1.549 0.070 0.063 0.028 tpme687006#0023 ...
Description	TPM Multianode Tantalum Ultra Low ESR Capacitor
File Size	100.36K / 3 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF19045LR308
OCR Text	... drain - source voltage v dss - 0.5, +65 vdc gate - source voltage v gs - 0.5, +15 vdc total device dissipation @ t c = 25 c derate above ...081 microstrip z11 0.645 x 0.081 microstrip pcb arlon gx0300-55-22, 30 mils, r = 2.55 z1 1....
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
File Size	378.96K / 10 Page	View it Online	Download Datasheet

				3M ELECTRONIC PRODUCTS DIVISION
Part No.	10126-52B2VC
OCR Text	...ester body flammability: ul 94v-0 color: black contact material: copper alloy plating underplating: 80 ? [ 2.5 m ] min. nickel wiping a...081 [27.45] 1.31 [33.3] 26 .600 [15.24] .87 [22.0] 1.231 [31.26] 1.46 [37.2] 36 .850 [21.59] 1.11 [2...
Description	26 CONTACT(S), MALE, OTHER D TYPE CONNECTOR, SOLDER, PLUG
File Size	1,654.03K / 6 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	MGA-53543
OCR Text	...Bm C/W C C Absolute Maximum 0.8 5.5 400 13 130 150 -65 to 150 Notes: 1. Operation of this device in excess of any of these limits may ca...081 0.082 0.082 0.082 0.083 0.083 0.083 0.083 0.083 0.083 0.083 0.082 0.082 0.082 0.081 0.081 0.08 0...
Description	MGA-53543 · 5V High Linearity LNA, 39dBm OIP3, 0.45-6GHz, SOT343(SC-70) 50 MHz to 6 GHz High Linear Amplifier
File Size	177.58K / 14 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp. NEC[NEC]
Part No.	NE650R279A NE650R279A-T1
OCR Text	0.2 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650R279A is a 0.2 W GaAs MES FET designed for middle power transmitter applications...081 0.082 0.082 0.081 0.081 0.083 0.086 0.087 0.087 0.085 0.084 0.083 S12 ANG. (deg.) 53.2 51.5 51.1...
Description	0.2 W L, S-BAND POWER GaAs MES FET 0.2册，S波段功率GaAs场效应晶体管 0.2 W L / S-BAND POWER GaAs MES FET
File Size	76.24K / 8 Page	View it Online	Download Datasheet

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