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![ISL9V3040D3S ISL9V3040S3 ISL9V3040P3 ISL9V3040S3S ISL9V3040S ISL9V3040P](Maker_logo/fairchild_semiconductor.GIF)
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
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Part No. |
ISL9V3040D3S ISL9V3040S3 ISL9V3040P3 ISL9V3040S3S ISL9V3040S ISL9V3040P
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OCR Text |
... TJ = 25C, ISCIS = 14.2A, L = 3.0 mHy At Starting TJ = 150C, ISCIS = 10.6A, L = 3.0 mHy Collector Current Continuous, At TC = 25C, See Fig 9...24mm Quantity 2500 800 -
Electrical Characteristics TA = 25C unless otherwise noted
Symbol Param... |
Description |
EcoSPARKTM 300mJ/ 400V/ N-Channel Ignition IGBT EcoSPARKTM 300mJ 400V N-Channel Ignition IGBT EcoSPARK 300mJ, 400V, N-Channel Ignition IGBT EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT
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File Size |
157.38K /
8 Page |
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NIEC[Nihon Inter Electronics Corporation]
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Part No. |
TCH30A15-11A
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OCR Text |
...IRM Conditions Min. Typ. Max. 2 0.91 1.5 Unit mA V C /W Tj= 25C, VRM= VRRM per arm Tj= 25C, IFM= 15 A VFM per arm Rth(j-c) Junction to Case
C_T_ 11A OUTLINE DRAWING (Dimensions in mm)
FORWARD CURRENT VS. VOLTAGE
TCH30A15/TCH30A15-11A... |
Description |
Schottky Barrier Diode
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File Size |
53.24K /
6 Page |
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NIEC[Nihon Inter Electronics Corporation]
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Part No. |
TCH30A15
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OCR Text |
...IRM Conditions Min. Typ. Max. 2 0.91 1.5 Unit mA V C /W Tj= 25C, VRM= VRRM per arm Tj= 25C, IFM= 15 A VFM per arm Rth(j-c) Junction to Case
C_T_ OUTLINE DRAWING (Dimensions in mm)
FORWARD CURRENT VS. VOLTAGE
TCH30A15/TCH30A15-11A (pe... |
Description |
Shottky Barrier Diode
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File Size |
52.54K /
6 Page |
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![ISL9R1560G2 ISL9R1560S3S ISL9R1560P2 ISL9R1560S2 ISL9R1560G2NL ISL9R1560P2NL ISL9R1560S3ST](Maker_logo/fairchild_semiconductor.GIF)
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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Part No. |
ISL9R1560G2 ISL9R1560S3S ISL9R1560P2 ISL9R1560S2 ISL9R1560G2NL ISL9R1560P2NL ISL9R1560S3ST
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OCR Text |
...perature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334
Ratings 150 20 -55 to 175 300...24mm Quantity 30 50 50 800
Electrical Characteristics TC = 25C unless otherwise noted
Symbol Par... |
Description |
15A, 600V StealthDiode 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-262 15A, 600V Stealth Diode 15A/ 600V Stealth Diode 15A, 600V Stealth⑩ Diode 15A, 600V Stealth Single Diode
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File Size |
134.24K /
6 Page |
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![FDP14AN06LA0 FDP14AN06LA FDB14AN06LA0](Maker_logo/fairchild_semiconductor.GIF)
FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FDP14AN06LA0 FDP14AN06LA FDB14AN06LA0
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OCR Text |
...rature 67 60 10 Figure 4 46 125 0.83 -55 to 175 A A A A mJ W W/oC
o
Ratings 60 20
Units V V
C
Thermal Characteristics
RJC RJA ...24mm N/A Quantity 800 units 50 units
Electrical Characteristics TC = 25C unless otherwise noted
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Description |
Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 61A, 0.014 Ohm, TO-220 Package N-Channel PowerTrench MOSFET, 60V, 60A, 0.0146 Ohms @ VGS = 5V, TO-263/D2PAK Package N-Channel PowerTrench MOSFET 60V/ 60A/ 14.6m N-Channel PowerTrench MOSFET 60V, 60A, 14.6mз
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File Size |
186.40K /
11 Page |
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![IRF640N IRF640NL IRF640NS](Maker_logo/fairchild_semiconductor.GIF)
FAIRCHILD SEMICONDUCTOR CORP
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Part No. |
IRF640N IRF640NL IRF640NS
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OCR Text |
0.15
Features
* Ultra Low On-Resistance - rDS(ON) = 0.102 (Typ), VGS = 10V * Simulation Models - Temperature Compensated PSPICE(R) and SAB...24mm N/A N/A Quantity 800 units 50 50
(c)2002 Fairchild Semiconductor Corporation
Rev. B
IR... |
Description |
18 A, 200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB N-CHANNEL POWER MOSFETS 200V, 18A, 0.15OHM N-Channel Power MOSFETs 200V, 18A, 0.15-Ohm
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File Size |
151.73K /
11 Page |
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Price and Availability
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