1.8.533.35.15 pdf Datasheet P12 Full Text Search --- IC-ON-LINE


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1.8.533.35.15 Datasheet PDF File

For 1.8.533.35.15 Found Datasheets File :: 1872 Search Time::2.031ms
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				ONSEMI[ON Semiconductor]
Part No.	MPN3404 MPN3404-D
OCR Text	...Structure Coupled with Wirebond 1 Construction for Optimum Reliability Anode * Low Series Resistance @ 100 MHz RS = 0.7 Ohms (Typ) @ IF = 1...8 R S , SERIES RESISTANCE (OHMS) I F , FORWARD CURRENT (mA) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0 2.0 4.0 6....
Description	SILICON PIN SWITCHING DIODE Silicon Pin Diode
File Size	32.77K / 4 Page	View it Online	Download Datasheet

				Agilent(Hewlett-Packard... Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)] Hitachi,Ltd.
Part No.	PPA1052 PPA1052-A-DN PPA1052-A-FP PPA1052-A-SC PPA1052-D-DN PPA1052-D-FP PPA1052-D-SC PPA1052-D-ST PPA1052-A-ST PPA1155-D-ST PDA2446 PDA2446-B-AP PDA2446-B-AS PDA2446-B-SF PDA2446-B-US PDA2446-D-AP PDA2446-D-AS PDA2446-D-SF PDA2446-D-US PPA0052 PPA0052-FC-A PPA0052-SC-A PPA0155 PPA0155-FC-A PPA0155-SC-A PPA1155 PPA1155-A-DN PPA1155-A-FP PPA1155-A-SC PPA1155-A-ST PPA1155-D-DN PPA1155-D-FP PPA1155-D-SC
OCR Text	...ck Reflection * High Bandwidth >1.5 GHz * -40C to +85C Operating Temperature Range Description The PDA range of products includes a vari...8 122 0.8 Maximum 10 128 8 1.0 Units m m m % mm 533 PDA Mechanical Outline Options PDA2446-B ...
Description	Analog Pigtailed PIN Photodiodes 模拟辫子PIN光电二极
File Size	257.10K / 8 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC
Part No.	THN6301S
OCR Text	...TURES o Low Noise Figure N.F = 1.1dB TYP. @ f=1GHz, VCE=8V, Ic=5mA o High Gain MAG = 16.5dB TYP. @ f=1GHz, VCE=8V, Ic=15mA o High Transitio...8 6 4 2 Ib=120uA step Ib=80uA step Ib=40uA step 0 2 4 6 8 10 100 0 0 50 100 150 0 TA...
Description	NPN Planer RF TRANSISTOR
File Size	97.80K / 10 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC
Part No.	THN6301U
OCR Text	...TURES o Low Noise Figure N.F = 1.1dB TYP. @ f=1GHz, VCE=8V, Ic=5mA o High Gain MAG = 17dB TYP. @ f=1GHz, VCE=8V, Ic=15mA o High Transition ...8 6 4 2 Ib=120uA step Ib=80uA step Ib=40uA step 0 2 4 6 8 10 100 0 0 50 100 150 0 TA...
Description	NPN Planer RF TRANSISTOR
File Size	102.07K / 10 Page	View it Online	Download Datasheet

				Vishay Intertechnology,Inc. Vishay Telefunken Vishay Siliconix
Part No.	BFR92R BFR92
OCR Text	...re D High transition frequency 1 1 13 581 94 9280 9510527 13 581 2 3 3 2 BFR92 Marking: P1 Plastic case (SOT 23) 1 = C...8 136.8 -41.3 -97.0 -131.5 -164.9 -179.7 168.1 153.6 138.7 130.8 -56.6 -116.5 -149.8 179.9 167.5 158...
Description	Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% Silicon NPN Planar RF Transistor From old datasheet system
File Size	144.83K / 9 Page	View it Online	Download Datasheet

				TriQuint Semiconductor, Inc. TriQuint Semiconductor,Inc. TRIQUINT[TriQuint Semiconductor]
Part No.	TGF4250 TGF4250-EEU
OCR Text	...applications 4250 0,572 x 1,334 x 0,102 mm (0.023 x 0.053 x 0.004 in.) DESCRIPTION The TriQuint TGF4250-EEU is a single gate 4.8 mm discrete GaAs Heterostructure Field Ef fect Transistor (HFET) designed for high ef ficiency powe...
Description	4.8 mm Discrete HFET 四点八毫米离散异质结场效应晶体管
File Size	179.42K / 7 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	UPA811T-T1 UPA811 UPA811T PA811T
OCR Text	...KAGE DRAWINGS (Unit: mm) 2.10.1 1.250.1 FEATURES * Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA 1 0.65 0.65 1.3 ...8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter) face to perforation side of the t...
Description	Low Noise, High Frequncy Amplifer NPN Transistor(楂??浣??澹版?澶у?NPN?朵?绠? HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD Low Noise, High Frequncy Amplifer NPN Transistor(高频低噪声放大器NPN晶体
File Size	47.81K / 6 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPA821 UPA821TC UPA821TC-T1
OCR Text	.... FEATURES * Low noise: NF= 1.2 dB TYP.@ f = 1 GHz, VCE = 3 V, IC = 7 mA * High gain: IS21el2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC =...8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base) face to perforation side of the tape...
Description	NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
File Size	62.45K / 12 Page	View it Online	Download Datasheet

For 1.8.533.35.15 Found Datasheets File :: 1872 Search Time::2.031ms
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