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  120.19 Datasheet PDF File

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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text ... 20 40 60 80 100 120 140 160 180 Junction Temperature, Tj (C) Fig.7. Typical transfer characteristics. ID = f(VGS) Transconductance, gfs (S) VDS > ID X RDS(ON) Tj = 25 C Fig.10. Gate threshold voltage. VGS(TO) = f(T...
Description N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 95.87K  /  7 Page

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    IRF7807VD1

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF7807VD1
OCR Text ... VGS = 4.5V 0 20 40 60 80 100 120 140 160 0.010 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 TJ , Junction Temperature ( C) VGS, Gate -to ...19 4 .80 3 .81 M AX 1 .75 0 .25 0 .46 0.25 4.98 3 .99 A 6 5 H 0.2 5 (.0 10 ) M AM 5 8 E -A...
Description Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:SP06; Number of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight FETKY⑩MOSFET肖特基二极管
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 116.12K  /  9 Page

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    IRF7807VD2 IRF7807VD2TR

IRF[International Rectifier]
Part No. IRF7807VD2 IRF7807VD2TR
OCR Text ... VGS = 4.5V 0 20 40 60 80 100 120 140 160 0.010 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 TJ , Junction Temperature ( C) VGS, Gate -to ...19 4 .80 3 .81 M AX 1 .75 0 .25 0 .46 0.25 4.98 3 .99 A 6 5 H 0.2 5 (.0 10 ) M AM 5 8 E -A...
Description 30V FETKY - MOSFET and Schottky Diode in a SO-8 package
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 113.54K  /  9 Page

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    IRF7807V

IRF[International Rectifier]
Part No. IRF7807V
OCR Text ... VGS = 4.5V 0 20 40 60 80 100 120 140 160 1.5 4 3 1.0 2 0.5 1 0.0 -60 -40 -20 0 0 2 4 6 8 10 12 TJ , Junctio...19 4 .80 3 .81 M AX 1 .75 0 .25 0 .46 0.25 4.98 3 .99 A 6 5 H 0.2 5 (.0 10 ) M AM 5 8 E -A...
Description N Channel Application Specific MOSFET

File Size 126.34K  /  8 Page

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    IRF7811AV IRF7811AVTR

International Rectifier
Part No. IRF7811AV IRF7811AVTR
OCR Text ...20 40 60 80 100 V GS = 4.5V 120 140 160 0 0 5 10 15 20 T J , Junction Temperature ( C) Q G , Total Gate Charge (nC) Figure ...19 4.80 3.8 1 M AX 1.75 0.25 0.46 0.25 4.98 3.99 A 6 5 H 0 .2 5 (.0 1 0 ) M AM 5 8 E -A- ...
Description Si, SMALL SIGNAL, FET, MS-012AA
N-Channel Application-Specific MOSFETs

File Size 85.36K  /  6 Page

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    IRF840AL IRF840AS IRF840ASTRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840AL IRF840AS IRF840ASTRR
OCR Text ... VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer...19 82 . 3 C O N TRO L LIN G D IM EN S IO N : IN C H. 4 H E ATSINK & L EA D D IM E N SIO N S DO N O T...
Description TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 8A条(丁)|63AB
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)最大值\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 125.49K  /  10 Page

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    IRF840A

IRF[International Rectifier]
Part No. IRF840A
OCR Text ... VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF840A ...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 87.92K  /  8 Page

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text ...25 -250 100 0.150 24 160 100 70 120 - UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH Drain to Source Breakdown Voltage Gate Th...19, 20) Gate Charge is Essentially Indpendent of Operating Temperature - VDS = -25V, VGS = 0V,...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

File Size 56.86K  /  7 Page

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    IRF9540NL IRF9540NS IRF9540NSTRL

IRF[International Rectifier]
Part No. IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text ...40 60 80 VG S = -1 0V 100 120 140 160 180 A -VG S , Ga te -to-Source Volta ge (V) T J , Junction T em perature (C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRF9540NS/L ...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

File Size 183.18K  /  10 Page

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    IRF9540N IRF9540 IRF9540NPBF

IRF[International Rectifier]
Part No. IRF9540N IRF9540 IRF9540NPBF
OCR Text ...40 60 80 VG S = -1 0V 100 120 140 160 180 A -VG S , Ga te -to-Source Volta ge (V) T J , Junction T em perature (C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRF9540N 30...
Description -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)

File Size 121.23K  /  8 Page

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