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11Y33 STP120NF BCM54 MB86907 FAN7842M M35V8X11 22400 P13FB1
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    IRF9520N

IRF[International Rectifier]
Part No. IRF9520N
OCR Text ..., IS = -4.0A, VGS = 0V --- 100 150 ns TJ = 25C, IF = -4.0A --- 420 630 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case - VDD IRF95...
Description Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

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    IRF9530N

IRF[International Rectifier]
Part No. IRF9530N
OCR Text ... VGS 10% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS F...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case - 10 VDD ...
Description Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

File Size 109.25K  /  8 Page

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    IRF9540NL IRF9540NS IRF9540NSTRL

IRF[International Rectifier]
Part No. IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text ...= 25C, IS = -11A, VGS = 0V --- 150 220 ns TJ = 25C, IF = -11A --- 830 1200 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-o...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case - V DD IRF9...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

File Size 183.18K  /  10 Page

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    IRF9540N IRF9540 IRF9540NPBF

IRF[International Rectifier]
Part No. IRF9540N IRF9540 IRF9540NPBF
OCR Text ...= 25C, IS = -11A, VGS = 0V --- 150 220 ns TJ = 25C, IF = -11A --- 830 1200 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-o...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case - VDD IRF95...
Description -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)

File Size 121.23K  /  8 Page

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    IRF9952

IRF[International Rectifier]
Part No. IRF9952
OCR Text ...J V/ ns 5.0 -5.0 -55 to + 150 C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient Symbol RJA Limit 62.5 ...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient IRF9952 100 ...
Description Power MOSFET(Vdss= -30V)

File Size 128.20K  /  10 Page

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    IRF9953

IRF[International Rectifier]
Part No. IRF9953
OCR Text ... 1.3 57 -1.3 0.20 -5.0 -55 to + 150 Units V Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25C Maximum Power ...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient IRF9953 Packa...
Description Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)

File Size 98.36K  /  7 Page

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    IRF9956

IRF[International Rectifier]
Part No. IRF9956
OCR Text ....0 1.3 44 2.0 0.20 5.0 -55 to + 150 Units V Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25C Maximum Power ...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient IRF9956 Packa...
Description Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)

File Size 98.88K  /  7 Page

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    IRF9Z24N IRF9Z24NPBF

IRF[International Rectifier]
Part No. IRF9Z24N IRF9Z24NPBF
OCR Text ... tf VGS 0 25 50 75 100 125 150 A 175 10% TC , C ase T emperature (C) 90% Fig 9. Maximum Drain Current Vs. Case Temperatur...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case - RG VDD ...
Description -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

File Size 105.16K  /  8 Page

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    IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR

IRF[International Rectifier]
Part No. IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR
OCR Text ... VGS 10% 0 25 50 75 100 125 150 175 T C , Case Temperature ( C) 90% VDS Fig 9. Maximum Drain Current Vs. Case Temperature ...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case - RG VDD ...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 158.36K  /  10 Page

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    IRF9Z34N IRF9Z34NPBF

International Rectifier
Part No. IRF9Z34N IRF9Z34NPBF
OCR Text ...tf VGS 0 25 50 75 100 125 150 175 10% T C , Case Temperature ( C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature ...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case - 15 RG ...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.35K  /  8 Page

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