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POLYFET[Polyfet RF Devices]
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Part No. |
SM703
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OCR Text |
...5 C )
Total Device Dissipation 150 Watts Junction to Case Thermal Resistance o 1.00 C/W Maximum Junction Temperature o 200 C Storage Temper...175MHz, VDS=28V, Idq=0.6A 120 100 80 60 40 20 0 0 2 4 6 Pin in Watts 8 10 16 15
1000
CAPACITANCE... |
Description |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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File Size |
35.35K /
2 Page |
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it Online |
Download Datasheet |
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POLYFET[Polyfet RF Devices]
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Part No. |
ST724
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OCR Text |
...torage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 50 V Drain to Source Voltage 50 V Gate to Source Voltage 20 V
...175MHz, VDS=12.5V, Idq=.8A
80 70 60 50 40 30 20 10 0 0 2 4 6 8 10 PIN IN WATTS 14.00
1000
CAPAC... |
Description |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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File Size |
35.03K /
2 Page |
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it Online |
Download Datasheet |
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EXAR[Exar Corporation]
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Part No. |
XRK32510CG XRK32510
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OCR Text |
...ycle to Cycle Jitter1 25 57 29 -150 -50 35 3.5 150 150 50 3.7 2.1 2.7 55 100 75 ps ps ps ps ps ns mA ns ns % -13.6 -22 mA MAX UNITS V CONDITIONS VO = VDD/2 VO = VDD/2 IOH = -8mA IOL = 8mA VOH = 2.4V VOH = 2.0V VOL = 0.8V VOL =0.55V VOH = ... |
Description |
3.3V PHASE-LOCK LOOP CLOCK DRIVER WITH 10 CLOCK OUTPUTS
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File Size |
61.57K /
7 Page |
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it Online |
Download Datasheet |
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STMICROELECTRONICS[STMicroelectronics]
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Part No. |
SD2942
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OCR Text |
...) VGS ID PDISS TJ TSTG
1. TJ = 150 C
Parameter Drain Source Voltage Drain-Gate Voltage (RGS = 1M) Gate-Source Voltage Drain Current Powe...175MHz f = 175MHz f = 175MHz f = 175MHz Min. 350 15 55 5:1 17 61 Typ. Max. Unit W dB % VSWR
All P... |
Description |
RF Power Transistors HF/VHF/UHF N - Channel MOSFETs
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File Size |
325.95K /
14 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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