...
Marking Symbol
2.50.1
+0.25
High collector to emitter voltage VCEO. Large collector power dissipation PC.
1
Transistor
PC -- Ta
1.4
2SB789, 2SB789A
IC -- VCE
-1.2 Ta=25C -1.0 -18mA -16mA -14mA IB=-20mA -12mA -10mA - 0...
...C Tj Tstg
(Ta=25C)
Ratings -25 -20 -7 -1 - 0.5 600 150 -55 ~ +150 Unit V V V A A mW C C
1:Base 2:Collector 3:Emitter
3
0.550.1
1.2...50.1
7
Unit nA A V V V
V V MHz
VCB = -10V, IE = 50mA, f = 200MHz VCB = -10V, IE = 0, f =...
... V V A A Test conditions I C = -25 mA, RBE = I E = -50 mA, IC = 0 VCB = -120 V, IE = 0 VCE = -100 V, RBE = VCE = -3 V, IC = -4 A*1 I C = -4 A, IB = -8 mA*1 I C = -8 A, IB = -80 mA*1 I C = -4 A, IB = -8 mA*1 I C = -8 A, IB = -80 mA*1 I C =...
...atures
q q q
0.650.15
+0.25 1.5 -0.05
0.650.15
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB...50 200 150 -55 ~ +150
emitter voltage 2SB792A Emitter to base voltage Peak collector current Coll...
Description
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
25)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=...50 -60 -5 -7 40 150 -50~150 Unit V V V A W
ELECTRICAL CHARACTERISTICS (TA=25)
Characteristic...
Description
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)
...
ABSOLUTE MAXIMUM RATING (TA=25)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Curre...50 -6 -7 60 150 -55~150
Unit V V V A W
ELECTRICAL CHARACTERISTICS (TA=25)
Characteristi...
...IC iC(peak) PC Tj Tstg Ratings -25 -20 -5 -0.7 -1 150 150 -55 to +150 Unit V V V A A mW C C
Electrical Characteristics (Ta = 25C)
Item C...50
0
50 100 150 Ambient Temperature Ta (C)
3
Unit: mm
2.95 0.2 1.9 0.2 0.95 0.95
0...