...unit: mm
6.50.1 5.30.1 4.350.1 2.30.1 0.50.1
s Applications
2.50.1
0.8max
0.930.1
1.00.1 0.10.05 0.50.1
s Absolute Maximum Ratings (TC = 25C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain curre...
Description
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset Silicon N-channel Power F-MOS FET Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
...ent q Switching power supply
2.0 1.2
5 4.0 2.00.2 1.10.1
2.0
5 5
0.70.1
s Absolute Maximum Ratings (TC = 25C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP...
...unit: mm
6.50.1 5.30.1 4.350.1 2.30.1 0.50.1
s Applications
2.50.1
0.8max
0.930.1
1.00.1 0.10.05 0.50.1
s Absolute Maximum Ratings (TC = 25C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain curre...
Description
Silicon N-channel Power F-MOS FET 5000 mA, 100 V, N-chANNEL, Si, SMALL SIGNAL, MOSFET Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
...tes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 150 V, RG = 25 , VGS = 20 V 0 V
The information in this document is subject...5.0 A VGS = 10 V, ID = 5.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 150 V, ID = 5.0 A VGS(on) = 10 V R...
Description
Switching N-channel power MOS FET industrial use N沟道 开关功率场效应晶体工业 From old datasheet system N-ch Power MOS FET
2SK740
Silicon N-channel MOS FET
Application
High speed power switching
Features
* * * * * Low on-resistance High speed switching L...5 A, VGS = 10 V, RL = 6 Test conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS =...