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SMBJ100C 600000 ADG793A 1N4892A GM9014 54853A 6N1136 BDW83C
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  28.8 Datasheet PDF File

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    BRILLIANCE SEMICONDUCTOR, Inc.
BSI[Brilliance Semiconductor]
Part No. BS616UV8020BI BS616UV8020 BS616UV8020BC
OCR Text ... Access Memory organized as 524,288 words by 16 bits or 1,048,576 bytes by 8 bits selectable by CIO pin and operates from a wide range of 1.8V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed a...
Description Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 1600万8位开

File Size 204.80K  /  11 Page

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    MC56F84442VLH

Freescale Semiconductor, Inc
Part No. MC56F84442VLH
OCR Text ...emory, including flexnvm (kb) 1 288 288 160 160 160 128 128 96 96 288 288 160 160 160 128 128 96 96 ram (kb) 32 32 24 24 24 16 16 8 8 32 32 24 24 24 16 16 8 8 memory resource protection yes yes yes yes yes yes yes yes yes yes yes yes yes ye...
Description MC56F844xx Advance Information

File Size 966.37K  /  67 Page

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    BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Part No. BS616UV8021FI BS616UV8021 BS616UV8021BC BS616UV8021BI BS616UV8021DC BS616UV8021DI BS616UV8021FC
OCR Text ... Access Memory organized as 524,288 words by 16 bits or 1,048,576 bytes by 8 bits selectable by CIO pin and operates from a wide range of 1.8V to 2.3V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed a...
Description Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 1600万8位开
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 16100万8位开

File Size 212.98K  /  12 Page

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    Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
Part No. C7041 C7040
OCR Text ...ctive area [mm (H) x mm (V)] 12.288 x 1.392 12.288 x 2.928 12.288 x 6.000 12.288 x 6.000 24.576 x 1.392 24.576 x 2.928 24.576 x 6.000 24.576 x 6.000 12.288 x 1.392 12.288 x 2.928 12.288 x 6.000 12.288 x 6.000 24.576 x 1.392 24.576 x 2.928 2...
Description CCD multichannel detector head

File Size 205.06K  /  6 Page

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    Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
Part No. C7181 C7180
OCR Text ...ctive area [mm (H) x mm (V)] 12.288 x 12.288 12.288 x 12.288 Note) Multichannel detector head C7182 designed for 512 x 512 pixel, two-stage TE-cooled CCD area image sensor (S7172-0909) is also available. *1: In normal CCD image sensors t...
Description CCD multichannel detector head

File Size 66.94K  /  2 Page

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    LAPIS SEMICONDUCTOR CO LTD
Part No. MSM56V16160D-12TS-K
OCR Text ...56v16160d/dh is a 2-bank 524,288-word 16-bit synchronous dynamic ram, fabricated in oki's cmos silicon-gate process technology. the device operates at 3.3 v. the inputs and outputs are lvttl compatible. features ? silicon gate, quadru...
Description 1M X 16 SYNCHRONOUS DRAM, 10 ns, PDSO50

File Size 376.49K  /  31 Page

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    FUJITSU[Fujitsu Media Devices Limited]
Part No. CS91
OCR Text ...ry capacity 32 to 128 K 2176 to 288 K Word range 16 to 1 K 1088 to 8 K Bit range 2 to 128 2 to 36 Unit bit bit 2. Clock synchronous dual-port RAM (2 addresses : 2 RW) Column type 4 16 Memory capacity 32 to 288 K 128 to 288 K Word range ...
Description Standard cell array

File Size 41.62K  /  9 Page

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