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SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
KM736V689A
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OCR Text |
...istics. icc value from 260ma to 280ma at -72 i sb1 value from 10ma to 20ma i sb2 value from 10ma to 20ma draft date may. 19. 1998 july. 13. 1998 aug. 31. 1998 the attached data sheets are prepared and approved by sam... |
Description |
64Kx36-Bit Synchronous Pipelined Burst SRAM(64Kx36位同步流水线脉冲 静RAM)
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File Size |
332.53K /
15 Page |
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it Online |
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Multi-Tech Systems, Inc.
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Part No. |
MTSMC-G2-V-ED MTSMC-G2-GP MTSMC-G2-GP-ED
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OCR Text |
...135ma (.66w @ 5vdc); maximum: 280ma (1.36w @ 5vdc); peak: 1.25a highlights applications. the socketmodem icell intelligent cellular modem is targeted at applications that periodically need to send or receive data over a wire... |
Description |
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File Size |
278.90K /
2 Page |
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it Online |
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Diodes Inc.
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Part No. |
DMN2004DWK-7
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OCR Text |
... 0.3 0 .5 0.1 0.4 v=10v, gs i = 280ma d v = 4.5v, gs i = 540ma d i , drain-source leakage current (na) dss v, fig. 9 drain source leakage current vs. volta g e ds drain-source voltage (v) 0.1 1 10 100 1000 10000 2 4 6 8 10 12 14 16 18 20 t ... |
Description |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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File Size |
138.85K /
4 Page |
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it Online |
Download Datasheet |
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Diodes Inc.
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Part No. |
DMN2004WK-7
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OCR Text |
....3 0 .5 0.1 0.4 v = 10v, gs i = 280ma d v=4.5v, gs i = 540ma d i , drain-source leakage current (na) dss v, fig. 9 drain source leakage current vs. volta g e ds drain-source voltage (v) 0.1 1 10 100 1000 10000 2 4 6 8 10 12 14 16 18 20 t = ... |
Description |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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File Size |
135.48K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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