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  280ma Datasheet PDF File

For 280ma Found Datasheets File :: 186    Search Time::1.157ms    
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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM736V689A
OCR Text ...istics. icc value from 260ma to 280ma at -72 i sb1 value from 10ma to 20ma i sb2 value from 10ma to 20ma draft date may. 19. 1998 july. 13. 1998 aug. 31. 1998 the attached data sheets are prepared and approved by sam...
Description 64Kx36-Bit Synchronous Pipelined Burst SRAM(64Kx36位同步流水线脉冲 静RAM)

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4C89183AF K4C89083AF-GIFB K4C89083AF-AIFB K4C89093AF-ACFB K4C89093AF-GIFB K4C89093AF-AIFB K4C89083AF-ACFB K4C89083AF-GCF6 K4C89083AF-GIF6 K4C89083AF-AIF6 K4C89083AF-ACF6 K4C89093AF-ACF5 K4C89183AF-ACFB K4C89183AF-AIFB K4C89183AF-GCFB K4C89183AF-ACF6 K4C89163AF-ACFB K4C89163AF-GIFB K4C89163AF-AIFB K4C89183AF-GIF5 K4C89083AF-AIF5 K4C89163AF-AIF6 K4C89183AF-AIF6 K4C89163AF-AIF5 K4C89093AF-AIF6 K4C89093AF-GIF5 K4C89183AF-AIF5 K4C89093AF-GCF5 K4C89183AF-ACF5 K4C89183AF-GIF6 K4C89183AF-GIFB K4C89083AF-GIF5 K4C89093AF-AIF5 K4C89163AF-ACF5 K4C89093AF-ACF6 K4C89163AF-GIF5 K4C89163AF-GIF6 K4C89163AF-GCF6
OCR Text ...(single bank) (max) 320ma 300ma 280ma i dd2p power down current (max) 70ma 65ma 60ma ? fully synchronous operation - double data rate (ddr) - data input/output are synchronized with both edges of ds / qs. ...
Description 288Mb x18 Network-DRAM2 Specification 288Mb x18网络DRAM2规范
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 250V; Case Size: 16x31.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 33uF; Voltage: 250V; Case Size: 12.5x20 mm; Packaging: Bulk
JT 55C 55#22M PIN PLUG
JT 8C 8#16 PIN PLUG
Thyristor / Diode Module; Repetitive Reverse Voltage Max, Vrrm:2200V; Current, It av:430A; Gate Trigger Voltage Max, Vgt:3V; Gate Trigger Current Max, Igt:200mA; Package/Case:LD43; di/dt:200A/ s RoHS Compliant: Yes
JT 55C 55#22 SKT PLUG

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    Multi-Tech Systems, Inc.
Part No. MTSMC-G2-V-ED MTSMC-G2-GP MTSMC-G2-GP-ED
OCR Text ...135ma (.66w @ 5vdc); maximum: 280ma (1.36w @ 5vdc); peak: 1.25a highlights applications. the socketmodem icell intelligent cellular modem is targeted at applications that periodically need to send or receive data over a wire...
Description
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    Samsung Electronic
Part No. K4C89083AF-ACF5 K4C89083AF-ACF6 K4C89083AF-ACFB K4C89083AF-AIF5 K4C89083AF-AIF6 K4C89083AF-AIFB K4C89083AF-GCF5 K4C89083AF-GCF6 K4C89083AF-GCFB K4C89083AF-GIF5 K4C89083AF-GIF6 K4C89083AF-GIFB K4C89093AF-ACF5 K4C89093AF-ACF6 K4C89093AF-ACFB K4C89093AF-AIF5 K4C89093AF-AIF6 K4C89093AF-AIFB K4C89093AF-GCF5 K4C89093AF-GCF6 K4C89093AF-GCFB K4C89093AF-GIF5 K4C89093AF-GIF6 K4C89093AF-GIFB K4C89163AF-ACF5 K4C89163AF-ACF6 K4C89163AF-ACFB K4C89163AF-AIF5 K4C89163AF-AIF6 K4C89163AF-AIFB K4C89183AF-AIF6 K4C89183AF-AIFB K4C89183AF-ACF5 K4C89183AF-ACF6 K4C89183AF-ACFB K4C89163AF-GIF6 K4C89163AF-GIFB K4C89183AF-GIF5 K4C89183AF-GIFB K4C89163AF-GIF5 K4C89183AF-GIF6 K4C89163AF-GCF5 K4C89163AF-GCF6 K4C89163AF-GCFB K4C89183AF-GCF5 K4C89183AF-GCF6 K4C89183AF-GCFB
OCR Text ...(single bank) (max) 320ma 300ma 280ma i dd2p power down current (max) 70ma 65ma 60ma ? fully synchronous operation - double data rate (ddr) - data input/output are synchronized with both edges of ds / qs. ...
Description 288Mb x18 Network-DRAM2 Specification

File Size 1,471.20K  /  55 Page

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    MAXIM[Maxim Integrated Products]
Part No. MAX4361EUA MAX4362EUB MAX4363EUP MAX4361 MAX4361ESA MAX4362 MAX4362ESD MAX4363 MAX4363ESP
OCR Text ...5dBm Average Line Power (DMT) o 280ma (min) Peak Output Current o Rail-to-Rail(R) Output Swing o Thermal and Short-Circuit Protection Features MAX4361/MAX4362/MAX4363 Ordering Information PART MAX4361EUA MAX4361ESA MAX4362EUB MAX4...
Description ADSL Drivers/Receivers for Customer Premise Equipment

File Size 243.74K  /  13 Page

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    Diodes Inc.
Part No. DMN2004DWK-7
OCR Text ... 0.3 0 .5 0.1 0.4 v=10v, gs i = 280ma d v = 4.5v, gs i = 540ma d i , drain-source leakage current (na) dss v, fig. 9 drain source leakage current vs. volta g e ds drain-source voltage (v) 0.1 1 10 100 1000 10000 2 4 6 8 10 12 14 16 18 20 t ...
Description DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 138.85K  /  4 Page

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    Diodes Inc.
Part No. DMN2004WK-7
OCR Text ....3 0 .5 0.1 0.4 v = 10v, gs i = 280ma d v=4.5v, gs i = 540ma d i , drain-source leakage current (na) dss v, fig. 9 drain source leakage current vs. volta g e ds drain-source voltage (v) 0.1 1 10 100 1000 10000 2 4 6 8 10 12 14 16 18 20 t = ...
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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    DMN2004WK DMN2004WK-7

Diodes Incorporated
Part No. DMN2004WK DMN2004WK-7
OCR Text ... 2.5V 0.2 VGS = 10V, ID = 280ma 0.1 0 -50 -25 0 25 50 75 100 125 150 ID, DRAIN CURRENT (A) Fig. 7 On-Resistance vs. Drain Current and Gate Voltage Tj, JUNCTION TEMPERATURE ( C) Fig. 8 Static Drain-Sour...
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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    DMN2004VK DMN2004VK-7

Diodes Incorporated
Part No. DMN2004VK DMN2004VK-7
OCR Text ... VGS = 2.5V VGS = 10V, ID = 280ma VGS = 4.5V 0.1 0.2 0.4 0.6 0.8 1 1.2 0 -50 -25 0 25 50 75 100 125 150 ID, DRAIN CURRENT (A) Fig. 7 On-Resistance vs. Drain Current and Gate Voltage ...
Description DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 141.60K  /  4 Page

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    2N7000D26Z

Fairchild Semiconductor
Part No. 2N7000D26Z
OCR Text ... =500ma d v = 25v ds 115ma 280ma 1 2 3 5 10 20 30 50 1 2 5 10 20 40 60 v , drain to source voltage (v) capacitance (pf) ds c iss f = 1 mhz v = 0v gs c oss c rss g d s v dd r l v v in out v gs dut r gen 10% 50% 90% 10% 9...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 86.83K  /  7 Page

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For 280ma Found Datasheets File :: 186    Search Time::1.157ms    
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