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  5.08 10 270 Datasheet PDF File

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    APT8067HVR

ADPOW[Advanced Power Technology]
Part No. APT8067HVR
OCR Text ...67HVR UNIT Volts Amps 800 11.5 46 30 40 200 1.6 -55 to 150 300 11.5 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient...08 (.200) BSC 050-5818 Rev B Dimensions in Millimeters and (Inches) APT's devices are covered...
Description POWER MOS V 800V 11.5A 0.670 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT8075BVFR

ADPOW[Advanced Power Technology]
Part No. APT8075BVFR
OCR Text ...ate Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts 050-5632 Rev - Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS...
Description POWER MOS V 800V 12A 0.750 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT8075BVR APT8075

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Part No. APT8075BVR APT8075
OCR Text ...ate Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts 050-5608 Rev B Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 12A 0.750 Ohm

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    ATF-21186 ATF-21186-STR ATF-21186-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-21186 ATF-21186-STR ATF-21186-TR1
OCR Text 5 - 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-21186 Features * Low Noise Figure: 0.5 dB Typ. @ 2 GHz * High Output ...08 S12 Mag. 0.051 0.096 0.131 0.158 0.177 0.188 0.193 0.193 0.191 0.185 0.179 0.172 0.167 0.162 0...
Description 0.5-6 GHz General Purpose Gallium Arsenide FET

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    ATF-45171

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-45171
OCR Text ...igh Gain at 1dB Compression: 10.5 dB Typical G1 dB at 4 GHz * High Power Efficiency: 38% Typical at 4 GHz * Hermetic Metal-Ceramic Stripline...08 2.0 .24 6.0 2 SOURCE .02 .50 .003 .002 .08 .05 .070 1.78 .05 1.3 Notes: (u...
Description 2-8 GHz Medium Power Gallium Arsenide FET

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    ATF-46171

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-46171
OCR Text ...kage range. This nominally 0.5 micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between...08 2.0 .24 6.0 2 SOURCE .02 .50 .003 .002 .08 .05 .070 1.78 .05 1.3 .034 .86 ...
Description 2-10 GHz Medium Power Gallium Arsenide FET(2-10 GHz 中等功率砷化FET)

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    AVS10 AVS10CB AVS10CBI SD1480

SGS Thomson Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
Part No. AVS10 AVS10CB AVS10CBI SD1480
OCR Text ...ng Q CP Time Controller S 5 VG G 3 1 4 VDD A1 ABSOLUTE MAXIMUM RATINGS CONTROLLER AVS1ACP08 Symbol VSS VI / V O II ...08 0.370 95 27 4.25 0.4 110 50 Vreg x 0.89 4.42 0.420 125 80 V V mV mV V Vrazht (4) Vraz...
Description AUTOMATIC VOLTAGE SWITCH (SMPS
ER 3C 3#8 SKT PLUG 自动电压开关开关电源00W
AUTOMATIC VOLTAGE SWITCH SMPS < 300W
AUTOMATIC VOLTAGE SWITCH SMPS < 300W
RF & MICROWAVE TRANSISTORS VHF APPLICATIONS
AUTOMATIC VOLTAGE SWITCH SMPS 300W
AUTOMATIC VOLTAGE SWITCH SMPS < 300W

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    AVS12 AVS12CB AVS1ACP08

SGS Thomson Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. AVS12 AVS12CB AVS1ACP08
OCR Text ...Osc / Out V 1 2 3 4 8 7 6 5 V Mode N.C. V March 1995 1/8 AVS12 BLOCK DIAGRAM AVS1ACP08 MODE 7 Reset MR Peak Voltage De...08 0.370 95 27 4.25 0.4 110 50 Vreg x 0.89 4.42 0.420 125 80 V V mV mV V Vrazht (4) Vraz...
Description AUTOMATIC VOLTAGE SWITCH (SMPS
AUTOMATIC VOLTAGE SWITCH SMPS < 500W
AUTOMATIC VOLTAGE SWITCH SMPS < 500W
AUTOMATIC VOLTAGE SWITCH SMPS < 500W

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    BC847ALT1 BC847BLT1 BC847CLT1 BC848BLT1 BC850CLT1 BC849BLT1 BC846BLT1 BC850BLT1 BC848CLT1 BC849CLT1 BC848ALT1 BC849ALT1

MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola Inc
Motorola, Inc.
Motorola Mobility Holdings, Inc.
Part No. BC847ALT1 BC847BLT1 BC847CLT1 BC848BLT1 BC850CLT1 BC849BLT1 BC846BLT1 BC850BLT1 BC848CLT1 BC849CLT1 BC848ALT1 BC849ALT1 BC850ALT1 BC846ALT1 BC846ALT1-D BC846ALT1_D BC847CLT1THRUBC850CLT1 BC846ALT1D BC846ALT1/D
OCR Text ...45 50 6.0 100 BC848 BC849 30 30 5.0 100 2 EMITTER Unit V V V mAdc 1 2 3 THERMAL CHARACTERISTICS Characteristic Total Device Di...08, STYLE 6 SOT- 23 (TO - 236AB) DEVICE MARKING BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; ...
Description CASE 318-08 STYLE 6 SOT-23 (TO-236AB)
CASE 318-08, STYLE 6 SOT-23 (TO-236AB)
CASE 318-08/ STYLE 6 SOT-23 (TO-236AB)
CIR 4C 4#0 FR PIN PLUG
High Speed CMOS Logic Triple 3-Input NOR Gates 14-PDIP -55 to 125 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
NPN Silicon General Purpose Transistors NPN硅通用晶体
High Speed CMOS Logic Dual Monostable Multivibrators with Reset 16-SOIC -55 to 125 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

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    CD430840A CD431240A CD431640A CD4340A

Powerex Power Semicondu...
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Powerex Power Semiconductor...
Part No. CD430840A CD431240A CD431640A CD4340A
OCR Text ... UL Recognized (E78240) 4 5 2 7 6 ~ 1 + CONNECTION DIAGRAM - 3 Benefits: T No Additional Insulation Componen...08 12 16 Current Amperes (x 1) 40 Note: Dimensions are for reference only. Revision Date: ...
Description POW-R-BLOK Dual SCR Isolated Module 40 Amperes / Up to 1600 Volts 63 A, 800 V, SCR
POW-R-BLOK Dual SCR Isolated Module 40 Amperes / Up to 1600 Volts 的POW - r -隔离台BLOk反应腔双可控硅模块四零安高达1600伏特

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