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Intersil
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Part No. |
HS-6664RH
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OCR Text |
...sivation: Type: SiO2 Thickness: 8ka 1kA Top Metallization: M1:6kA 1kA Si/Al/Cu 2kA 500A TiW M2:10kA 2kASi/Al/Cu ASSEMBLY RELATED INFORMATION: Substrate Potential: VDD ADDITIONAL INFORMATION: Worst Case Current Density: 2 x 105 A/cm2 Trans... |
Description |
PROM, CMOS, 8Kx8, 65ns, 500A, Nichrome Fuse, Rad-Hard
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File Size |
132.60K /
5 Page |
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it Online |
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Intersil
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Part No. |
HS-6254RH
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OCR Text |
...Cu (2%)/TiW Thickness: Metal 1: 8ka 0.5kA Type: Metal 2: AlCu (2%) Thickness: Metal 2: 16kA 0.8ka Substrate: UHF-1X Bonded Wafer, DI Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: Floating ADDITIONAL INFORMATION... |
Description |
NPN Transistor Array, 5 NPN Array, 8GHz, 3.5dB Noise Figure, Rad-Hard
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File Size |
30.64K /
3 Page |
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it Online |
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Intersil
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Part No. |
ACS03MS
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OCR Text |
...SIVATION: Type: SiO2 Thickness: 8ka 1kA WORST CASE CURRENT DENSITY: <2.0 x 105A/cm 2 BOND PAD SIZE: 110m x 110m 4.3 mils x 4.3 mils
Metallization Mask Layout
ACS03MS
B1 (2) A1 (1) VCC (14) B4 (13)
Y1 (3)
(12) A4
A2 (4)
(11)... |
Description |
NAND Gate, Quad 2-Input, Rad-Hard, Advanced Logic, CMOS
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File Size |
63.60K /
3 Page |
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it Online |
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Infineon Technologies AG
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Part No. |
IFS150V12PT4
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OCR Text |
... c =150a t vj =150c, di/dt,= 2,8ka/s e on 15,0 mj turn off energy loss per puls igbt, u dc =600v, i c =150a t vj =150c, du/dt = 3,5kv/s e off 13,9 mj reverse recovery energy diode, u dc =600v, i f =150a t vj =150c, di/dt = 2... |
Description |
MIPAQserve
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File Size |
364.34K /
8 Page |
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it Online |
Download Datasheet
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Price and Availability
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