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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K9F8008W0M-TCB0 K9F8008W0M-TIB0 K9K1208D0C
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| OCR Text |
...0.6 to +7.0 v temperature under bias k9f8008w0m-tcb0 t bias -10 to +125 c k9f8008w0m-tib0 -40 to +125 storage temperature t stg -65 to +150...ready depends on the value of the pull-up resistor tied r/ b pin. 3. to break the sequential read c... |
| Description |
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight 100万8位NAND快闪记忆
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| File Size |
448.26K /
25 Page |
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ST Microelectronics
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| Part No. |
M29F800AB70N1 M29F800AB70N6 M29F800AB70M1
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| OCR Text |
... range option 3) C40 to 125 c t bias temperature under bias C50 to 125 c t stg storage temperature C65 to 150 c v io (2) input or output vo...ready for bus read and bus write operations after t phel or t rhel , whichever occurs last. see the... |
| Description |
8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) SINGLE SUPPLY FLASH MEMORY
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| File Size |
195.15K /
22 Page |
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ST Microelectronics
意法半导
STMicroelectronics N.V.
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| Part No. |
M29W800AB M29W800AB120ZA5T M29W800AT80ZA5T M29W800AT90M1T M29W800AT120ZA5T M29W800AB100N5T M29W800AB100N1T -M29W800AT120N5T
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| OCR Text |
...g temperature (3) 40 to 85 c t bias temperature under bias 50 to 125 c t stg storage temperature 65 to 150 c v io (2) input or output vol...ready/busy output (rb). ready/busy is an open-drain output and gives the internal state of the p/e.c... |
| Description |
8 Mbit 1Mb x8 or 512Kb x16 / Boot Block Low Voltage Single Supply Flash Memory
Low-Power Single Buffer/Driver with 3-State Output 5-DSBGA -40 to 85 8兆x812KB的x16插槽，引导块低压单电源闪
RESISTOR: 100 OHM, 1/10W, 1%, PACKAGE 0805 81兆x812KB的x16插槽，引导块低压单电源闪
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory 8兆x812KB的x16插槽，引导块低压单电源闪
Low-Power Single Buffer/Driver with 3-State Output 5-SOT-23 -40 to 85
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| File Size |
238.70K /
33 Page |
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it Online |
Download Datasheet |
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意法半导
STMicroelectronics N.V.
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| Part No. |
M36W108T100ZN5T M36W108T100ZM6T M36W108T120ZM6T M36W108B100ZM6T M36W108B120ZM6T M36W108T120ZN6T M36W108T100ZM1T
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| OCR Text |
... temperature (3) C40 to 85 c t bias temperature under bias C50 to 125 c t stg storage temperature C65 to 150 c v io (2) input or output vo...ready/ busy (rb ) signal will be held at v il . the end of the flash memory reset will be indicated ... |
| Description |
TV 5C 5#16 PIN RECP
Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:FEP; Conductor Material:Copper; Jacket Color:Light Blue; Leaded Process Compatible:Yes RoHS Compliant: Yes
Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:FEP; Jacket Color:Blue; Leaded Process Compatible:Yes; Voltage Nom.:30V RoHS Compliant: Yes
Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:FEP; Leaded Process Compatible:Yes RoHS Compliant: Yes
Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:FEP; Conductor Material:Copper; Jacket Color:Black; Leaded Process Compatible:Yes; Number of Conductors:1 RoHS Compliant: Yes
TV 6C 6#20 PIN WALL RECP 8兆8，启动块闪存兆位128KB的x8 SRAM的低电压多媒体存储产
Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes 8兆8，启动块闪存兆位128KB的x8 SRAM的低电压多媒体存储产
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| File Size |
251.92K /
35 Page |
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it Online |
Download Datasheet |
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