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ON Semiconductor
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| Part No. |
MAC08MT1G
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| OCR Text |
...age (f = 250 hz, i tm = 1.0 a, commutating di/dt = 1.5 a/ms on?state current duration = 2.0 ms, v drm = 200 v, gate unenergized, t c = 110 c, gate source resistance = 150 , see figure 10) (dv/dt) c 1.5 ? ? v/ s critical rate?of?ris... |
| Description |
Sensitive Gate Triacs Silicon Bidirectional Thyristors 600 V, 0.8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-261AA
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| File Size |
90.88K /
7 Page |
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it Online |
Download Datasheet
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
K08PN40 FKN08PN40
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| OCR Text |
...tical-Rate of Rise of Off-State commutating Voltage (di/dt=-0.7A/mS)
Commutation dv/dt Test
VDRM (V)
FKN08PN40
Test Condition
1. Junction Temperature TJ=125C 2. Rate of decay of on-state commutating current (di/dt)C 3. Peak off-sta... |
| Description |
TRIAC (Silicon Bidirectional Thyristor)
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| File Size |
228.84K /
7 Page |
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it Online |
Download Datasheet |
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ONSEMI[ON Semiconductor]
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| Part No. |
MAC16NG MAC16D MAC16DG MAC16M MAC16MG MAC16N
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| OCR Text |
...re high noise immunity and high commutating di/dt are required.
http://onsemi.com Features
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Blocking Voltage to 800 Volts On-State Current Rating of 16 Amperes RMS at 80C Uniform Gate Trigger Currents in Three Quadrant... |
| Description |
Triacs Silicon Bidirectional Thyristors
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| File Size |
65.26K /
6 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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