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  dc-to-vhf Datasheet PDF File

For dc-to-vhf Found Datasheets File :: 2306    Search Time::2.031ms    
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    BFS20 BFS20_3

PHILIPS[Philips Semiconductors]
Part No. BFS20 BFS20_3
OCR Text ...base voltage collector current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambien...to ambient CONDITIONS note 1 VALUE 500 BFS20 UNIT K/W MAX. 100 10 100 - 900 - - - UNIT n...
Description NPN medium frequency transistor
From old datasheet system

File Size 41.72K  /  8 Page

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    UPA800T UPA800T-T1 UPA800T-KB

NEC[NEC]
Part No. UPA800T UPA800T-T1 UPA800T-KB
OCR Text ... Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-back Capacitance Insertion Power Gain (1) Insertion Power Gain (...to guard pin of bridge. hFE CLASSIFICATION Rank Marking hFE Value KB RL 80 to 200 TYPICAL CHA...
Description 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

File Size 47.29K  /  6 Page

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    CA3227 CA3227E CA3227M CA3227M96 FN1345

INTERSIL[Intersil Corporation]
Part No. CA3227 CA3227E CA3227M CA3227M96 FN1345
OCR Text ...f 3GHz, making them useful from DC to 1.5GHz. The monolithic construction of these devices provides close electrical and thermal matching of the five transistors. Features * Gain-Bandwidth Product (fT) . . . . . . . . . . . . . . . . . ...
Description From old datasheet system
High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz

File Size 63.43K  /  7 Page

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    DS1110S DS1110S-100 DS1110S-125 DS1110S-150 DS1110S-175 DS1110S-200 DS1110S-250 DS1110S-300 DS1110S-350 DS1110S-400 DS11

MAXIM - Dallas Semiconductor
DALLAS[Dallas Semiconducotr]
DALLAS[Dallas Semiconductor]
Coilcraft, Inc.
ITW Pancon
Molex, Inc.
Maxim Integrated Products, Inc.
Part No. DS1110S DS1110S-100 DS1110S-125 DS1110S-150 DS1110S-175 DS1110S-200 DS1110S-250 DS1110S-300 DS1110S-350 DS1110S-400 DS1110S-450 DS1110S-50 DS1110S-500 DS1110S-60 DS1110S-75 DS1110S-80 DS1110-350 DS1110E-175 DS1110-175 DS1110 DS1110-100 DS1110-125 DS1110-150 DS1110-200 DS1110-250 DS1110-300 DS1110-400 DS1110-450 DS1110-50 DS1110-500 DS1110-60 DS1110-75 DS1110-80 DS1110E DS1110E-100 DS1110E-125 DS1110E-150 DS1110E-200 DS1110E-250 DS1110E-300 DS1110E-350 DS1110E-400 DS1110E-450 DS1110E-50 DS1110E-500 DS1110E-60 DS1110E-75 DS1110E-80 DS1110S-500/TAMPR
OCR Text ...y affect device reliability. DC ELECTRICAL CHARACTERISTICS (VCC = 5.0V 5%, TA = -40C to +85C.) PARAMETER Supply Voltage High-Level Input Voltage Low-Level Input Voltage Input Leakage Current Active Current High-Level Output Current Low...
Description 10-Tap Silicon Delay Line 10抽头硅延迟线
10-Tap Silicon Delay Line SILICON DELAY LINE, TRUE OUTPUT, PDSO16

File Size 106.71K  /  8 Page

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    HFA3096 HFA3096B HFA3127B HFA3128 HFA3128B HFA3046 HFA3046B HFA3127 FN3076

INTERSIL[Intersil Corporation]
Part No. HFA3096 HFA3096B HFA3127B HFA3128 HFA3128B HFA3046 HFA3046B HFA3127 FN3076
OCR Text ... MIN TYP MAX UNITS PARAMETER DC NPN CHARACTERISTICS Collector-to-Base Breakdown Voltage, V(BR)CBO Collector-to-Emitter Breakdown Voltage, V(BR)CEO Collector-to-Emitter Breakdown Voltage, V(BR)CES Emitter-to-Base Breakdown Voltage, V(BR)E...
Description From old datasheet system
Ultra High Frequency Transistor Arrays

File Size 57.18K  /  9 Page

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    HFA3127 HFA3127MJ_883 HFA3127_883 FN3967 HFA3127/883

INTERSIL[Intersil Corporation]
Part No. HFA3127 HFA3127MJ_883 HFA3127_883 FN3967 HFA3127/883
OCR Text ... . . . -55oC to +125oC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Collector-to-Base Breakdown Voltage SYMBOL V(BR)CBO CONDITIONS IC = 100A, IE = 0 GROUP A SUBGROUPS 1 2, 3 Collector-to-Emitter Breakdown Voltage V(BR...
Description    Ultra High Frequency Transistor Array
From old datasheet system

File Size 53.41K  /  7 Page

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    MAX1479 MAX1479ATE

MAXIM[Maxim Integrated Products]
Part No. MAX1479 MAX1479ATE
OCR Text ...y affect device reliability. DC ELECTRICAL CHARACTERISTICS (Typical Application Circuit, all RF inputs and outputs are referenced to 50, VDD = +2.1V to +3.6V, VENABLE = VDD, TA = -40C to +125C, unless otherwise noted. Typical values are...
Description 300MHz to 450MHz Low-Power, Crystal-Based 10dBm ASK/FSK Transmitter

File Size 615.14K  /  11 Page

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    MC1374P MC1374_D ON0832

Motorola, Inc
ON Semi
Part No. MC1374P MC1374_D ON0832
OCR Text ...e input to Pin 14 can include a dc feedback current for AFC over a limited range. The modulated FM signal from Pin 3 is coupled to Pin 1 of the RF modulator and is then modulated onto the AM carrier. MOTOROLA ANALOG IC DEVICE DATA 3 ...
Description TV MODULATOR CIRCUIT
From old datasheet system

File Size 156.27K  /  10 Page

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    Q67007-A5211 TUA6010XS TUA6010 TUA6010XSGEG

INFINEON[Infineon Technologies AG]
Part No. Q67007-A5211 TUA6010XS TUA6010 TUA6010XSGEG
OCR Text ... . . . . . . . . . . . . 5-3 AC/DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-4 Bit Allocatio...to 900 MHz in increments of 62.5 kHz. The tuning process is controlled by a microprocessor via an I2...
Description Wireless Components
TV Mixer-Oscillator-PLL

File Size 337.75K  /  32 Page

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    S849TR S849T

Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
Vishay Siliconix
Part No. S849TR S849T
OCR Text ...R Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Gate 1 - source breakdown voltage Gate...to 6 V, f = 800 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz Cauti...
Description MOSMIC for TV-Tuner Prestage with 12 V Supply Voltage MOSMIC的电视调谐器12 V电源电压前置
From old datasheet system

File Size 134.56K  /  8 Page

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