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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRFE6S9135HR3
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| OCR Text |
... n - channel enhancement - mode lateral mosfets designed for broadband commercial and industrial applications with frequencies up to 1000 mhz. the high gain and broadband performance of these devices make them ideal for large - signal, comm... |
| Description |
N-Channel Enhancement-Mode lateral MOSFETs N沟道增强型MOSFET的外
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| File Size |
438.73K /
12 Page |
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it Online |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF9002NR2
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| OCR Text |
lateral mosfet designed for broadband commercial and industrial applications with frequen- cies to 1000 mhz. the high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in... |
| Description |
RF Power Field Effect Transistor Array N-Channel Enhancement-Mode lateral MOSFET RF功率场效应晶体管阵列N沟道增强型MOSFET的侧
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| File Size |
393.48K /
12 Page |
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it Online |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF6V2300N
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| OCR Text |
... n - channel enhancement - mode lateral mosfets designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 mhz. devices are unmatched and are suitable for use in industrial, medical and s... |
| Description |
N-Channel Enhancement-Mode lateral MOSFETs N沟道增强型MOSFET的外
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| File Size |
203.78K /
8 Page |
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it Online |
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飞思卡尔半导体(中国)有限公司
Motorola, Inc.
Advanced Semiconductor
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF9060 MRF9060R1 MRF9060S MRF9060SR1
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| OCR Text |
...ors
N-Channel Enhancement-Mode lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common... |
| Description |
4 MEGABIT 3.3 VOLT SERIAL CONFIGURATION UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor
945 MHz, 60 W, 26 V lateral N-CHANNEL BROADBAND RF POWER MOSFETs
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| File Size |
388.20K /
12 Page |
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it Online |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF6V2300NBR1
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| OCR Text |
... n - channel enhancement - mode lateral mosfets designed primarily for cw large - signal output and driver applications with frequencies up to 450 mhz. devices are unmatched and are suitable for use in industrial, medical and scientific ap... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode lateral MOSFETs 射频功率场效应晶体管N沟道增强型MOSFET的外
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| File Size |
515.79K /
14 Page |
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it Online |
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Freescale (Motorola)
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| Part No. |
MRF9180R6
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| OCR Text |
... n ? channel enhancement ? mode lateral mosfet designed for broadband commercial and industrial applications with frequencies from 865 to 895 mhz. the high gain and broadband performance of this device make it ideal for large ? signal, comm... |
| Description |
880 MHz, 170 W, 26 V lateral N–Channel RF Power MOSFET
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| File Size |
231.16K /
12 Page |
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it Online |
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Price and Availability
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