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14073 73J25P UGZ6GFH FOD4208T S6B0725X 0PT10 83905 T8301
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  p-hemt Datasheet PDF File

For p-hemt Found Datasheets File :: 479    Search Time::3.234ms    
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    TG1000-10

RFHIC
Part No. TG1000-10
OCR Text ... v, v gs @i dq , t a =25 p arameter u nit min typ max condition frequency range mhz 100 - 1000 z s = zl = 50 ohm power gain @p1db db 12 15 - vds = +28v vgs @i dq idq = 5ma pout @ p 1db...
Description GaN Hybrid Power Amplifier

File Size 551.06K  /  6 Page

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    LCL2103A-L LCL1903-L LCL1903-L-14

RFHIC
Part No. LCL2103A-L LCL1903-L LCL1903-L-14
OCR Text ...multichip hybrid module ? gaas p-hemt & hbt chip on board ? no matching circuit needed ? high gain & low noise ? single supply voltage (+5v) ? surface mount hybrid type ? tape & reel packaging ? small size, high heatsink ? alumina s...
Description Multichip Hybrid Module

File Size 167.71K  /  4 Page

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    UTCL8115 L8115

友顺科技股份有限公司
UTC[Unisonic Technologies]
Part No. UTCL8115 L8115
OCR Text ...ST CONDITONS IFIN=0 VFIN=100mV p/p VFIN=100mV p/p 100 IL=50mA(LB or HB) VLOV=0 VLOV=0, IL=0 RIb-Csub=1M VLOV=3V, IL=0mA RIb-Gnd=1M VLOV=0, IL=10mA VLOV=3V ,IL=50mA VLOV=0 ,IL=0 Rhb-Csub=1M VLOV=3V, IL=0mA Rhb-Gnd=1M VLOV=0, IL=10mA VLOV=3V...
Description FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION

File Size 171.92K  /  13 Page

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    CREE
Part No. CGHV27030S
OCR Text ...) package. r e v 0. 2 C a p r il 2 0 1 4 features for 50 v in cghv27030s-tb1 ? 2.5 - 2.7 ghz oper ation ? 30 w t ypical output p ower ? 21 db gain at 5 w p ave ? -36 dbc aclr at 5 w p a v e ? 32% effciency at 5 w p ave...
Description GaN HEMT

File Size 1,746.87K  /  26 Page

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    CL3502-L

RFHIC
Part No. CL3502-L
OCR Text p p l l i i f f i i e e r r c c l l 3 3 5 5 0 0 1 1 - - l l / / c c l l 3 3 5 5 0 0 2 2 - - l l ? tel : 82-31-...hemt chip on board ? no matching circuit needed ? high maximum input power(+25dbm) ? high ip3 & l...
Description Low Noise Amplifier

File Size 721.28K  /  5 Page

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    CHV2242A CHV2242A-99F_00 CHV2242A-99F/00

UMS[United Monolithic Semiconductors]
Part No. CHV2242A CHV2242A-99F_00 CHV2242A-99F/00
OCR Text ...chip Schottky diode, based on a p-hemt, is used as varactor. All the active devices are internally self biased. The circuit is manufactured with the p-hemt process : 0.25m gate length, via holes through the substrate, air bridges and electr...
Description Q-band VCO based on Ku-band Oscillator and Q-band Multiplier

File Size 809.51K  /  8 Page

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    LCL1503-L LCL1503-L14 LCL1503-L-14 LCL1803-L

RFHIC
Part No. LCL1503-L LCL1503-L14 LCL1503-L-14 LCL1803-L
OCR Text ...multichip hybrid module ? gaas p-hemt & hbt chip on board ? no matching circuit needed ? high gain & low noise ? single supply voltage (+5v) ? surface mount hybrid type ? tape & reel packaging ? small size, high heatsink ? alumina s...
Description Multichip Hybrid Module

File Size 177.93K  /  4 Page

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    RRP131K0-10

RFHIC
Part No. RRP131K0-10
OCR Text ...t pulse power w 1000 1200 - p o input pulse power dbm - 7 10 p i power gain db 53 54 - g p gain flatness db - - 1.0 ? g p duty cycle % - - 20 dc pulse width us - - 500 pw efficiency % 40 50 - e ff ampli...
Description Pulse Amp Module

File Size 215.56K  /  4 Page

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    RFHA1023

RF Micro Devices
Part No. RFHA1023
OCR Text ...- 5 5 7 0 or s s a l e s - s u p p o r t @ r f m d . c o m . ordering information rf in vgq pin 1 (cut) rf out vdq pin 2 gnd base rfha1023 ...hemt technology advanced heat sink technology optimized evaluation board layout for 50 opera...
Description 225W GaN WIDE-BAND PULSED POWER AMPLIFIER

File Size 346.13K  /  10 Page

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    RFHA1020

RF Micro Devices
Part No. RFHA1020
OCR Text ...tisfy the following expression: p diss <(t j -t c )/r th j-c and t c =t case parameter specification unit condition min. typ. max. recommen...hemt devices are esd sensitive materials. please use proper esd precautions when handling devices ...
Description 280W GaN WIDE-BAND PULSED POWER AMPLIFIER

File Size 1,334.35K  /  10 Page

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For p-hemt Found Datasheets File :: 479    Search Time::3.234ms    
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